FR2755137B1 - Nouveau copolymere de resine photosensible - Google Patents

Nouveau copolymere de resine photosensible

Info

Publication number
FR2755137B1
FR2755137B1 FR9713244A FR9713244A FR2755137B1 FR 2755137 B1 FR2755137 B1 FR 2755137B1 FR 9713244 A FR9713244 A FR 9713244A FR 9713244 A FR9713244 A FR 9713244A FR 2755137 B1 FR2755137 B1 FR 2755137B1
Authority
FR
France
Prior art keywords
photosensitive resin
resin copolymer
new photosensitive
new
copolymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9713244A
Other languages
English (en)
Other versions
FR2755137A1 (fr
Inventor
Jae Chang Jung
Cheol Kyu Bok
Hyung Gi Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of FR2755137A1 publication Critical patent/FR2755137A1/fr
Application granted granted Critical
Publication of FR2755137B1 publication Critical patent/FR2755137B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/30—Introducing nitrogen atoms or nitrogen-containing groups
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
FR9713244A 1996-10-24 1997-10-22 Nouveau copolymere de resine photosensible Expired - Fee Related FR2755137B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960047901A KR100211546B1 (ko) 1996-10-24 1996-10-24 신규한 포토레지스트용 공중합체

Publications (2)

Publication Number Publication Date
FR2755137A1 FR2755137A1 (fr) 1998-04-30
FR2755137B1 true FR2755137B1 (fr) 1999-07-16

Family

ID=19478680

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9713244A Expired - Fee Related FR2755137B1 (fr) 1996-10-24 1997-10-22 Nouveau copolymere de resine photosensible

Country Status (9)

Country Link
US (1) US5981142A (fr)
JP (1) JP3147059B2 (fr)
KR (1) KR100211546B1 (fr)
CN (1) CN1099052C (fr)
DE (1) DE19746932B4 (fr)
FR (1) FR2755137B1 (fr)
GB (1) GB2318579B (fr)
NL (1) NL1007343C2 (fr)
TW (1) TW449673B (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5380337A (en) * 1994-01-24 1995-01-10 Romaine; Richard A. Mesh-type skin biopsy appliance
KR100200305B1 (ko) * 1996-06-29 1999-06-15 김영환 원자외선용 감광막 및 이를 이용한 감광막패턴형성방법
KR100263906B1 (ko) * 1998-06-02 2000-09-01 윤종용 백본이 환상구조를 가지는 감광성 폴리머 및 이를 포함하는 레지스트 조성물
KR100642830B1 (ko) * 2004-08-25 2006-11-10 주식회사 삼양이엠에스 양성 레지스트 조성물
KR100597715B1 (ko) * 2004-08-25 2006-07-10 주식회사 삼양이엠에스 음성 레지스트 조성물
US7873058B2 (en) * 2004-11-08 2011-01-18 Mosaid Technologies Incorporated Outlet with analog signal adapter, a method for use thereof and a network using said outlet
EP1887041A4 (fr) * 2005-05-30 2008-08-13 Kaneka Corp Composition de resine
US8766097B2 (en) * 2010-12-30 2014-07-01 Lg Chem Ltd. Electrode, and electronic device comprising same
KR102450804B1 (ko) * 2018-02-28 2022-10-06 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법, 수지

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3964908A (en) * 1975-09-22 1976-06-22 International Business Machines Corporation Positive resists containing dimethylglutarimide units
US4246374A (en) * 1979-04-23 1981-01-20 Rohm And Haas Company Imidized acrylic polymers
US4524121A (en) * 1983-11-21 1985-06-18 Rohm And Haas Company Positive photoresists containing preformed polyglutarimide polymer
US4569897A (en) * 1984-01-16 1986-02-11 Rohm And Haas Company Negative photoresist compositions with polyglutarimide polymer
US4837124A (en) * 1986-02-24 1989-06-06 Hoechst Celanese Corporation High resolution photoresist of imide containing polymers
US5019488A (en) * 1988-09-29 1991-05-28 Hoechst Celanese Corporation Method of producing an image reversal negative photoresist having a photo-labile blocked imide
JP2875556B2 (ja) * 1989-10-11 1999-03-31 沖電気工業株式会社 半導体素子の製造方法
JPH0459864A (ja) * 1990-06-29 1992-02-26 Sumitomo Chem Co Ltd 熱可塑性樹脂組成物
US5227280A (en) * 1991-09-04 1993-07-13 International Business Machines Corporation Resists with enhanced sensitivity and contrast
FR2696469B1 (fr) * 1992-10-02 1994-12-02 Atochem Elf Sa Procédé de préparation de copolymères glutarimides et composés intermédiaires utiles.
JPH08286384A (ja) * 1995-04-14 1996-11-01 Hitachi Ltd パタン形成方法及びそれに用いるフォトレジスト材料
US5879853A (en) * 1996-01-18 1999-03-09 Kabushiki Kaisha Toshiba Top antireflective coating material and its process for DUV and VUV lithography systems

Also Published As

Publication number Publication date
NL1007343A1 (nl) 1998-04-27
KR19980028733A (ko) 1998-07-15
GB2318579A (en) 1998-04-29
TW449673B (en) 2001-08-11
CN1180848A (zh) 1998-05-06
NL1007343C2 (nl) 1998-06-08
DE19746932A1 (de) 1998-04-30
GB2318579B (en) 2000-09-13
US5981142A (en) 1999-11-09
DE19746932B4 (de) 2006-05-18
JP3147059B2 (ja) 2001-03-19
FR2755137A1 (fr) 1998-04-30
GB9722438D0 (en) 1997-12-24
JPH10133380A (ja) 1998-05-22
CN1099052C (zh) 2003-01-15
KR100211546B1 (ko) 1999-08-02

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20100630