DE69635440D1 - Halbleiteranordnung mit einem Schaltungssubstrat und einem Gehäuse - Google Patents

Halbleiteranordnung mit einem Schaltungssubstrat und einem Gehäuse

Info

Publication number
DE69635440D1
DE69635440D1 DE69635440T DE69635440T DE69635440D1 DE 69635440 D1 DE69635440 D1 DE 69635440D1 DE 69635440 T DE69635440 T DE 69635440T DE 69635440 T DE69635440 T DE 69635440T DE 69635440 D1 DE69635440 D1 DE 69635440D1
Authority
DE
Germany
Prior art keywords
housing
semiconductor device
circuit substrate
substrate
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69635440T
Other languages
English (en)
Other versions
DE69635440T2 (de
Inventor
Masatoshi Matsuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69635440D1 publication Critical patent/DE69635440D1/de
Application granted granted Critical
Publication of DE69635440T2 publication Critical patent/DE69635440T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
DE1996635440 1995-10-25 1996-05-09 Halbleiteranordnung mit einem Schaltungssubstrat und einem Gehäuse Expired - Lifetime DE69635440T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP27758795 1995-10-25
JP27758795A JP3396566B2 (ja) 1995-10-25 1995-10-25 半導体装置

Publications (2)

Publication Number Publication Date
DE69635440D1 true DE69635440D1 (de) 2005-12-22
DE69635440T2 DE69635440T2 (de) 2006-08-10

Family

ID=17585548

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1996635440 Expired - Lifetime DE69635440T2 (de) 1995-10-25 1996-05-09 Halbleiteranordnung mit einem Schaltungssubstrat und einem Gehäuse

Country Status (4)

Country Link
US (1) US5751058A (de)
EP (1) EP0772235B1 (de)
JP (1) JP3396566B2 (de)
DE (1) DE69635440T2 (de)

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US7142434B2 (en) * 2002-01-16 2006-11-28 Rockwell Automation Technologies, Inc. Vehicle drive module having improved EMI shielding
US6965514B2 (en) * 2002-01-16 2005-11-15 Rockwell Automation Technologies, Inc. Fluid cooled vehicle drive module
US7177153B2 (en) 2002-01-16 2007-02-13 Rockwell Automation Technologies, Inc. Vehicle drive module having improved cooling configuration
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JP3847676B2 (ja) * 2002-07-15 2006-11-22 三菱電機株式会社 パワー半導体装置
JP2005142189A (ja) * 2003-11-04 2005-06-02 Toyota Industries Corp 半導体装置
JP4640089B2 (ja) * 2005-10-03 2011-03-02 日産自動車株式会社 電力変換装置
JP2007209184A (ja) * 2006-02-06 2007-08-16 Mitsubishi Electric Corp 電力変換装置
DE102006006424B4 (de) * 2006-02-13 2011-11-17 Semikron Elektronik Gmbh & Co. Kg Anordnung mit mindestens einem Leistungshalbleitermodul und einem Kühlbauteil und zugehöriges Herstellungsverfahren
DE102006006423B4 (de) * 2006-02-13 2009-06-10 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul und zugehöriges Herstellungsverfahren
DE102006008632B4 (de) * 2006-02-21 2007-11-15 Infineon Technologies Ag Leistungshalbleiterbauteil und Verfahren zu dessen Herstellung
DE102006027481C5 (de) * 2006-06-14 2012-11-08 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit gegeneinander elektrisch isolierten Anschlusselementen
JP5028085B2 (ja) 2006-12-27 2012-09-19 アイシン・エィ・ダブリュ株式会社 電子回路装置とその製造方法
JP5045111B2 (ja) * 2007-01-17 2012-10-10 トヨタ自動車株式会社 半導体モジュール及びその製造方法
TWI402952B (zh) * 2007-09-27 2013-07-21 Sanyo Electric Co 電路裝置及其製造方法
JP4969388B2 (ja) * 2007-09-27 2012-07-04 オンセミコンダクター・トレーディング・リミテッド 回路モジュール
JP4934559B2 (ja) * 2007-09-27 2012-05-16 オンセミコンダクター・トレーディング・リミテッド 回路装置およびその製造方法
JP4991467B2 (ja) * 2007-09-27 2012-08-01 オンセミコンダクター・トレーディング・リミテッド 回路モジュールおよびそれを用いた室外機
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JP2009081325A (ja) * 2007-09-27 2009-04-16 Sanyo Electric Co Ltd 回路装置
JP5029900B2 (ja) * 2007-11-20 2012-09-19 アイシン・エィ・ダブリュ株式会社 モータの制御装置
EP2071626A1 (de) * 2007-12-11 2009-06-17 ABB Research Ltd. Halbleitermodul und Anschlußeinheit
US8461623B2 (en) 2008-07-10 2013-06-11 Mitsubishi Electric Corporation Power semiconductor module
DE102009035819A1 (de) * 2009-08-01 2011-02-03 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit stromsymmetrischem Lastanschlusselement
JP5481148B2 (ja) * 2009-10-02 2014-04-23 日立オートモティブシステムズ株式会社 半導体装置、およびパワー半導体モジュール、およびパワー半導体モジュールを備えた電力変換装置
ITTO20100064U1 (it) * 2010-04-13 2011-10-14 Gate Srl Unita' elettronica di controllo, in particolare unita' di controllo della velocita' di un elettroventilatore
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KR102034717B1 (ko) * 2013-02-07 2019-10-21 삼성전자주식회사 파워모듈용 기판, 파워모듈용 터미널 및 이들을 포함하는 파워모듈
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EP3736855A1 (de) 2019-05-06 2020-11-11 Infineon Technologies AG Leistungshalbleitermodulanordnung und verfahren zur herstellung derselben
EP3736858A1 (de) 2019-05-06 2020-11-11 Infineon Technologies AG Leistungshalbleitermodulanordnung
EP3736854A1 (de) 2019-05-06 2020-11-11 Infineon Technologies AG Leistungshalbleitermodulanordnung
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JP6960984B2 (ja) * 2019-12-26 2021-11-05 三菱電機株式会社 電子装置及びその絶縁部材
JP7428017B2 (ja) * 2020-03-06 2024-02-06 富士電機株式会社 半導体モジュール
JP7337027B2 (ja) * 2020-05-20 2023-09-01 三菱電機株式会社 半導体装置
JP2022006780A (ja) 2020-06-25 2022-01-13 富士電機株式会社 半導体モジュール
WO2022158257A1 (ja) * 2021-01-22 2022-07-28 住友電気工業株式会社 半導体装置
JP7438454B2 (ja) * 2021-03-29 2024-02-26 三菱電機株式会社 半導体装置
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JP2936855B2 (ja) * 1991-12-26 1999-08-23 富士電機株式会社 電力用半導体装置
JP2725952B2 (ja) * 1992-06-30 1998-03-11 三菱電機株式会社 半導体パワーモジュール
JP2956363B2 (ja) * 1992-07-24 1999-10-04 富士電機株式会社 パワー半導体装置

Also Published As

Publication number Publication date
EP0772235A3 (de) 1999-05-06
JP3396566B2 (ja) 2003-04-14
US5751058A (en) 1998-05-12
EP0772235A2 (de) 1997-05-07
EP0772235B1 (de) 2005-11-16
JPH09121019A (ja) 1997-05-06
DE69635440T2 (de) 2006-08-10

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