DE69615282D1 - Tiegel für die Züchtung fehlerfreier Einkristalle - Google Patents
Tiegel für die Züchtung fehlerfreier EinkristalleInfo
- Publication number
- DE69615282D1 DE69615282D1 DE69615282T DE69615282T DE69615282D1 DE 69615282 D1 DE69615282 D1 DE 69615282D1 DE 69615282 T DE69615282 T DE 69615282T DE 69615282 T DE69615282 T DE 69615282T DE 69615282 D1 DE69615282 D1 DE 69615282D1
- Authority
- DE
- Germany
- Prior art keywords
- crucibles
- single crystals
- flawless single
- growing
- growing flawless
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/02—Surface treatment of glass, not in the form of fibres or filaments, by coating with glass
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/213—SiO2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S65/00—Glass manufacturing
- Y10S65/08—Quartz
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Glass Melting And Manufacturing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/490,465 US5976247A (en) | 1995-06-14 | 1995-06-14 | Surface-treated crucibles for improved zero dislocation performance |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69615282D1 true DE69615282D1 (de) | 2001-10-25 |
DE69615282T2 DE69615282T2 (de) | 2002-04-18 |
Family
ID=23948172
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69615282T Expired - Lifetime DE69615282T2 (de) | 1995-06-14 | 1996-06-10 | Tiegel für die Züchtung fehlerfreier Einkristalle |
Country Status (9)
Country | Link |
---|---|
US (1) | US5976247A (de) |
EP (1) | EP0748885B1 (de) |
JP (1) | JP3046545B2 (de) |
KR (1) | KR100408905B1 (de) |
CN (1) | CN1096506C (de) |
DE (1) | DE69615282T2 (de) |
MY (1) | MY112218A (de) |
SG (1) | SG50738A1 (de) |
TW (1) | TW366544B (de) |
Families Citing this family (93)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5980629A (en) * | 1995-06-14 | 1999-11-09 | Memc Electronic Materials, Inc. | Methods for improving zero dislocation yield of single crystals |
EP0911429A1 (de) * | 1997-09-30 | 1999-04-28 | Heraeus Quarzglas GmbH | Quarzglastiegel zum Herstellen Siliciumeinkristall sowie Verfahren zu seiner Herstellung |
US6319313B1 (en) * | 1999-03-15 | 2001-11-20 | Memc Electronic Materials, Inc. | Barium doping of molten silicon for use in crystal growing process |
US6350312B1 (en) * | 1999-03-15 | 2002-02-26 | Memc Electronic Materials, Inc. | Strontium doping of molten silicon for use in crystal growing process |
US6344083B1 (en) | 2000-02-14 | 2002-02-05 | Memc Electronic Materials, Inc. | Process for producing a silicon melt |
US6749683B2 (en) | 2000-02-14 | 2004-06-15 | Memc Electronic Materials, Inc. | Process for producing a silicon melt |
US6632413B2 (en) | 2000-08-21 | 2003-10-14 | Astropower, Inc. | Method for purifying silicon |
DE10041582B4 (de) * | 2000-08-24 | 2007-01-18 | Heraeus Quarzglas Gmbh & Co. Kg | Quarzglastiegel sowie Verfahren zur Herstellung desselben |
AUPR054000A0 (en) * | 2000-10-04 | 2000-10-26 | Austai Motors Designing Pty Ltd | A planetary gear apparatus |
WO2002040732A1 (en) | 2000-11-15 | 2002-05-23 | G.T. Equipment Technologies Inc. | A protective layer for quartz crucibles used for silicon crystallization |
US6755049B2 (en) * | 2001-03-08 | 2004-06-29 | Heraeus Quarzglas Gmbh & Co. Kg | Method of producing a quartz glass crucible |
US6510707B2 (en) | 2001-03-15 | 2003-01-28 | Heraeus Shin-Etsu America, Inc. | Methods for making silica crucibles |
US6641663B2 (en) | 2001-12-12 | 2003-11-04 | Heracus Shin-Estu America | Silica crucible with inner layer crystallizer and method |
US7118789B2 (en) | 2001-07-16 | 2006-10-10 | Heraeus Shin-Etsu America | Silica glass crucible |
JP2003095678A (ja) * | 2001-07-16 | 2003-04-03 | Heraeus Shin-Etsu America | シリコン単結晶製造用ドープ石英ガラスルツボ及びその製造方法 |
US20030024467A1 (en) * | 2001-08-02 | 2003-02-06 | Memc Electronic Materials, Inc. | Method of eliminating near-surface bubbles in quartz crucibles |
US6712901B2 (en) * | 2001-10-16 | 2004-03-30 | Japan Super Quartz Corporation | Surface modification process of quartz glass crucible |
DE10156137B4 (de) * | 2001-11-15 | 2004-08-19 | Wacker-Chemie Gmbh | Verfahren zur Herstellung eines Kieselglastiegels mit kristallinen Bereichen aus einem porösen Kieselglasgrünkörper |
JP4427775B2 (ja) * | 2002-03-29 | 2010-03-10 | ジャパンスーパークォーツ株式会社 | 表面改質石英ガラスルツボとその表面改質方法 |
US20030183161A1 (en) | 2002-03-29 | 2003-10-02 | Japan Super Quartz Corporation | Surface modified quartz glass crucible and its modification process |
DE10217946A1 (de) | 2002-04-22 | 2003-11-13 | Heraeus Quarzglas | Quarzglastiegel und Verfahren zur Herstellung desselben |
US6875515B2 (en) * | 2002-05-10 | 2005-04-05 | General Electric Company | Fused quartz article having controlled devitrification |
JP3822150B2 (ja) * | 2002-08-12 | 2006-09-13 | 独立行政法人科学技術振興機構 | 酸化ガリウム鉄混晶の結晶製造方法 |
JP4444559B2 (ja) * | 2002-10-09 | 2010-03-31 | ジャパンスーパークォーツ株式会社 | 石英ガラスルツボの強化方法とシリコン単結晶の引き上げ方法 |
US20040187767A1 (en) * | 2002-10-24 | 2004-09-30 | Intel Corporation | Device and method for multicrystalline silicon wafers |
JP4330363B2 (ja) * | 2003-03-28 | 2009-09-16 | ジャパンスーパークォーツ株式会社 | 石英ガラスルツボ |
DE10327496A1 (de) * | 2003-06-17 | 2005-01-20 | Heraeus Quarzglas Gmbh & Co. Kg | Verfahren zur Herstellung eines Quarzglasbauteils mit hoher thermischer Stabilität |
US7635414B2 (en) * | 2003-11-03 | 2009-12-22 | Solaicx, Inc. | System for continuous growing of monocrystalline silicon |
US20050120945A1 (en) * | 2003-12-03 | 2005-06-09 | General Electric Company | Quartz crucibles having reduced bubble content and method of making thereof |
JP2005255488A (ja) * | 2004-03-12 | 2005-09-22 | Komatsu Electronic Metals Co Ltd | 石英るつぼおよび石英るつぼを用いた半導体単結晶製造方法 |
US7497907B2 (en) * | 2004-07-23 | 2009-03-03 | Memc Electronic Materials, Inc. | Partially devitrified crucible |
JP5050363B2 (ja) * | 2005-08-12 | 2012-10-17 | 株式会社Sumco | 半導体シリコン基板用熱処理治具およびその製作方法 |
US7427327B2 (en) * | 2005-09-08 | 2008-09-23 | Heraeus Shin-Etsu America, Inc. | Silica glass crucible with barium-doped inner wall |
US7383696B2 (en) * | 2005-09-08 | 2008-06-10 | Heraeus Shin-Etsu America, Inc. | Silica glass crucible with bubble-free and reduced bubble growth wall |
US20070151504A1 (en) * | 2005-10-19 | 2007-07-05 | General Electric Company | Quartz glass crucible and method for treating surface of quartz glass crucible |
US20080128067A1 (en) * | 2006-10-08 | 2008-06-05 | Momentive Performance Materials Inc. | Heat transfer composite, associated device and method |
US9139932B2 (en) | 2006-10-18 | 2015-09-22 | Richard Lee Hansen | Quartz glass crucible and method for treating surface of quartz glass crucible |
US7716948B2 (en) * | 2006-12-18 | 2010-05-18 | Heraeus Shin-Etsu America, Inc. | Crucible having a doped upper wall portion and method for making the same |
JP5213356B2 (ja) | 2007-05-31 | 2013-06-19 | 信越石英株式会社 | シリコン単結晶引上用石英ガラスルツボおよびその製造方法 |
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JP4922233B2 (ja) * | 2008-04-30 | 2012-04-25 | ジャパンスーパークォーツ株式会社 | 石英ガラスルツボ |
JP2009269792A (ja) * | 2008-05-07 | 2009-11-19 | Covalent Materials Corp | シリコン溶融ルツボおよびこれに用いる離型材 |
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US8813813B2 (en) | 2012-09-28 | 2014-08-26 | Apple Inc. | Continuous amorphous feedstock skull melting |
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US9445459B2 (en) | 2013-07-11 | 2016-09-13 | Crucible Intellectual Property, Llc | Slotted shot sleeve for induction melting of material |
US9925583B2 (en) | 2013-07-11 | 2018-03-27 | Crucible Intellectual Property, Llc | Manifold collar for distributing fluid through a cold crucible |
US10724148B2 (en) | 2014-01-21 | 2020-07-28 | Infineon Technologies Ag | Silicon ingot and method of manufacturing a silicon ingot |
DE102014107590B3 (de) * | 2014-05-28 | 2015-10-01 | Infineon Technologies Ag | Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers |
JP6324837B2 (ja) * | 2014-07-31 | 2018-05-16 | 信越石英株式会社 | 単結晶シリコン引き上げ用石英ガラスるつぼの製造方法 |
US9873151B2 (en) | 2014-09-26 | 2018-01-23 | Crucible Intellectual Property, Llc | Horizontal skull melt shot sleeve |
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JP6743753B2 (ja) | 2017-04-27 | 2020-08-19 | 株式会社Sumco | シリコン単結晶の引上げ方法 |
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CN109306518A (zh) * | 2018-12-11 | 2019-02-05 | 晶科能源有限公司 | 一种生长硅锭/晶棒用坩埚及其制备方法 |
CN110552057A (zh) * | 2019-10-11 | 2019-12-10 | 内蒙古中环协鑫光伏材料有限公司 | 一种新型石英坩埚及提高单晶硅棒尾部寿命的方法 |
CN110629281A (zh) * | 2019-10-11 | 2019-12-31 | 内蒙古中环协鑫光伏材料有限公司 | 一种新型石英坩埚的制备方法 |
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CN110670121B (zh) * | 2019-11-20 | 2024-04-12 | 宁夏盾源聚芯半导体科技股份有限公司 | 局部涂层石英坩埚及其制作方法 |
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JP2022180696A (ja) | 2021-05-25 | 2022-12-07 | 株式会社Sumco | 石英ガラスルツボ及びその製造方法並びにシリコン単結晶の製造方法 |
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DE19916241C2 (de) * | 1999-04-10 | 2001-04-19 | Dental Kunstleder & Lederservi | Operationsleuchte, insbesondere für den Dentalbereich |
-
1995
- 1995-06-14 US US08/490,465 patent/US5976247A/en not_active Expired - Lifetime
-
1996
- 1996-02-07 TW TW085101500A patent/TW366544B/zh not_active IP Right Cessation
- 1996-06-10 DE DE69615282T patent/DE69615282T2/de not_active Expired - Lifetime
- 1996-06-10 EP EP96304342A patent/EP0748885B1/de not_active Expired - Lifetime
- 1996-06-12 SG SG1996010054A patent/SG50738A1/en unknown
- 1996-06-12 MY MYPI96002380A patent/MY112218A/en unknown
- 1996-06-13 KR KR1019960021255A patent/KR100408905B1/ko not_active IP Right Cessation
- 1996-06-14 CN CN96102289A patent/CN1096506C/zh not_active Expired - Fee Related
- 1996-06-14 JP JP8154336A patent/JP3046545B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5976247A (en) | 1999-11-02 |
JP3046545B2 (ja) | 2000-05-29 |
CN1096506C (zh) | 2002-12-18 |
EP0748885A1 (de) | 1996-12-18 |
KR970001603A (ko) | 1997-01-24 |
KR100408905B1 (ko) | 2004-04-13 |
EP0748885B1 (de) | 2001-09-19 |
SG50738A1 (en) | 1998-07-20 |
MY112218A (en) | 2001-04-30 |
JPH09110590A (ja) | 1997-04-28 |
DE69615282T2 (de) | 2002-04-18 |
CN1149634A (zh) | 1997-05-14 |
TW366544B (en) | 1999-08-11 |
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