DE69609937D1 - Vorrichtung zur Herstellung Silizium Einkristallen - Google Patents

Vorrichtung zur Herstellung Silizium Einkristallen

Info

Publication number
DE69609937D1
DE69609937D1 DE69609937T DE69609937T DE69609937D1 DE 69609937 D1 DE69609937 D1 DE 69609937D1 DE 69609937 T DE69609937 T DE 69609937T DE 69609937 T DE69609937 T DE 69609937T DE 69609937 D1 DE69609937 D1 DE 69609937D1
Authority
DE
Germany
Prior art keywords
silicon single
single crystals
producing silicon
producing
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69609937T
Other languages
English (en)
Other versions
DE69609937T2 (de
Inventor
Toshirou Hayashi
Ryouji Hoshi
Izumi Fusegawa
Tomohiko Ohta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69609937D1 publication Critical patent/DE69609937D1/de
Publication of DE69609937T2 publication Critical patent/DE69609937T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69609937T 1995-12-28 1996-12-13 Vorrichtung zur Herstellung Silizium Einkristallen Expired - Lifetime DE69609937T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35221195A JP3402041B2 (ja) 1995-12-28 1995-12-28 シリコン単結晶の製造装置

Publications (2)

Publication Number Publication Date
DE69609937D1 true DE69609937D1 (de) 2000-09-28
DE69609937T2 DE69609937T2 (de) 2001-03-22

Family

ID=18422524

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69609937T Expired - Lifetime DE69609937T2 (de) 1995-12-28 1996-12-13 Vorrichtung zur Herstellung Silizium Einkristallen

Country Status (4)

Country Link
US (1) US5766346A (de)
EP (1) EP0781874B1 (de)
JP (1) JP3402041B2 (de)
DE (1) DE69609937T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09263491A (ja) * 1996-03-27 1997-10-07 Shin Etsu Handotai Co Ltd シリコン単結晶の製造装置
JP2000044387A (ja) * 1998-07-27 2000-02-15 Nippon Steel Corp シリコン単結晶製造方法
US6287382B1 (en) * 1998-10-13 2001-09-11 Memc Electronic Materials, Inc. Electrode assembly for electrical resistance heater used in crystal growing apparatus
US6482261B2 (en) 2000-12-29 2002-11-19 Ebara Solar, Inc. Magnetic field furnace
KR100783646B1 (ko) * 2002-11-11 2007-12-07 스미도모쥬기가이고교 가부시키가이샤 냉동기 냉각형 초전도 자석장치
JP4889553B2 (ja) * 2007-04-16 2012-03-07 コバレントマテリアル株式会社 単結晶引上装置
CN101400834B (zh) 2007-05-30 2012-06-27 胜高股份有限公司 硅单晶提拉装置
JP5131170B2 (ja) * 2008-12-05 2013-01-30 信越半導体株式会社 単結晶製造用上部ヒーターおよび単結晶製造装置ならびに単結晶製造方法
JP5293615B2 (ja) * 2010-01-08 2013-09-18 信越半導体株式会社 単結晶製造装置
US9611565B2 (en) * 2010-08-26 2017-04-04 Gtat Corporation Crystal growth apparatus with ceramic coating and methods for preventing molten material breach in a crystal growth apparatus
CN110359082A (zh) * 2019-08-15 2019-10-22 胡正阳 一种热场稳定的单晶炉
CN117822126A (zh) * 2024-03-02 2024-04-05 山东华特磁电科技股份有限公司 一种磁拉晶永磁装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4606037A (en) * 1983-01-18 1986-08-12 Agency Of Industrial Science & Technology Apparatus for manufacturing semiconductor single crystal
JPS6144797A (ja) * 1984-08-10 1986-03-04 Toshiba Corp 単結晶育成装置およびその制御方法
JPS63297291A (ja) * 1987-05-29 1988-12-05 Toshiba Ceramics Co Ltd シリコン単結晶引上装置
JPS63297292A (ja) * 1987-05-29 1988-12-05 Toshiba Ceramics Co Ltd シリコン単結晶引上装置
JPS6442389A (en) * 1987-08-06 1989-02-14 Toshiba Ceramics Co Pulling device for silicon single crystal
JP2546736B2 (ja) * 1990-06-21 1996-10-23 信越半導体株式会社 シリコン単結晶引上方法
US5196085A (en) * 1990-12-28 1993-03-23 Massachusetts Institute Of Technology Active magnetic flow control in Czochralski systems
JPH0772116B2 (ja) * 1991-02-15 1995-08-02 信越半導体株式会社 単結晶引上装置
JPH08143391A (ja) * 1993-06-01 1996-06-04 Texas Instr Inc <Ti> チョクラルスキ結晶引上げ装置に使用する螺旋加熱器

Also Published As

Publication number Publication date
US5766346A (en) 1998-06-16
DE69609937T2 (de) 2001-03-22
JPH09183691A (ja) 1997-07-15
EP0781874B1 (de) 2000-08-23
JP3402041B2 (ja) 2003-04-28
EP0781874A3 (de) 1998-03-04
EP0781874A2 (de) 1997-07-02

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