DE69706589T2 - Vorrichtung zur Herstellung Silizium-Einkristallen - Google Patents
Vorrichtung zur Herstellung Silizium-EinkristallenInfo
- Publication number
- DE69706589T2 DE69706589T2 DE69706589T DE69706589T DE69706589T2 DE 69706589 T2 DE69706589 T2 DE 69706589T2 DE 69706589 T DE69706589 T DE 69706589T DE 69706589 T DE69706589 T DE 69706589T DE 69706589 T2 DE69706589 T2 DE 69706589T2
- Authority
- DE
- Germany
- Prior art keywords
- silicon single
- single crystals
- producing silicon
- producing
- crystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/917—Magnetic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8097704A JPH09263491A (ja) | 1996-03-27 | 1996-03-27 | シリコン単結晶の製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69706589D1 DE69706589D1 (de) | 2001-10-18 |
DE69706589T2 true DE69706589T2 (de) | 2002-07-11 |
Family
ID=14199318
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69706589T Expired - Fee Related DE69706589T2 (de) | 1996-03-27 | 1997-03-24 | Vorrichtung zur Herstellung Silizium-Einkristallen |
Country Status (6)
Country | Link |
---|---|
US (1) | US5968266A (de) |
EP (1) | EP0798404B1 (de) |
JP (1) | JPH09263491A (de) |
KR (1) | KR100482812B1 (de) |
DE (1) | DE69706589T2 (de) |
TW (1) | TW531572B (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112010005100B4 (de) * | 2010-01-08 | 2020-02-13 | Shin-Etsu Handotai Co., Ltd. | Einkristall-Herstellungsvorrichtung |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5922127A (en) * | 1997-09-30 | 1999-07-13 | Memc Electronic Materials, Inc. | Heat shield for crystal puller |
US6093913A (en) * | 1998-06-05 | 2000-07-25 | Memc Electronic Materials, Inc | Electrical heater for crystal growth apparatus with upper sections producing increased heating power compared to lower sections |
US6287382B1 (en) * | 1998-10-13 | 2001-09-11 | Memc Electronic Materials, Inc. | Electrode assembly for electrical resistance heater used in crystal growing apparatus |
US6285011B1 (en) | 1999-10-12 | 2001-09-04 | Memc Electronic Materials, Inc. | Electrical resistance heater for crystal growing apparatus |
DE19959416C1 (de) * | 1999-12-09 | 2001-03-15 | Freiberger Compound Mat Gmbh | Heizelement zum Beheizen von Schmelztiegeln und Anordnung von Heizelementen |
DE10129675A1 (de) * | 2001-06-20 | 2003-01-02 | Solarworld Ag | Vorrichtung zur elektrischen Beheizung eines senkrecht stehenden Raumes |
JP4161655B2 (ja) * | 2002-09-13 | 2008-10-08 | 信越半導体株式会社 | 結晶製造用ヒーター及び結晶製造装置並びに結晶製造方法 |
DE112005000715B4 (de) * | 2004-03-31 | 2016-02-04 | Komatsu Denshi Kinzoku K.K. | Halbleitereinkristall-Herstellungsvorrichtung |
US8241424B2 (en) * | 2005-09-30 | 2012-08-14 | Sumco Techxiv Kabushiki Kaisha | Single crystal semiconductor manufacturing apparatus and manufacturing method |
KR101000326B1 (ko) | 2007-05-30 | 2010-12-13 | 가부시키가이샤 사무코 | 실리콘 단결정 인상 장치 |
TW200928018A (en) * | 2007-12-21 | 2009-07-01 | Green Energy Technology Inc | Crystal-growing furnace with convectional cooling structure |
JP5169455B2 (ja) * | 2008-05-08 | 2013-03-27 | 信越半導体株式会社 | 単結晶の成長方法および単結晶の引き上げ装置 |
KR102017080B1 (ko) * | 2017-12-05 | 2019-09-02 | 웅진에너지 주식회사 | 잉곳 성장장치 |
JP7294225B2 (ja) * | 2020-04-23 | 2023-06-20 | 信越半導体株式会社 | 単結晶引上げ装置及び半導体単結晶の製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3039071A (en) * | 1959-07-06 | 1962-06-12 | William M Ford | Electrical resistance-type heater |
US4606037A (en) * | 1983-01-18 | 1986-08-12 | Agency Of Industrial Science & Technology | Apparatus for manufacturing semiconductor single crystal |
US4597949A (en) * | 1983-03-31 | 1986-07-01 | Massachusetts Institute Of Technology | Apparatus for growing crystals |
JPS6144794A (ja) * | 1984-08-08 | 1986-03-04 | Hitachi Ltd | 発熱体 |
JPH0772116B2 (ja) * | 1991-02-15 | 1995-08-02 | 信越半導体株式会社 | 単結晶引上装置 |
JP2688137B2 (ja) * | 1991-12-04 | 1997-12-08 | 信越半導体株式会社 | シリコン単結晶の引上げ方法 |
JP3402041B2 (ja) * | 1995-12-28 | 2003-04-28 | 信越半導体株式会社 | シリコン単結晶の製造装置 |
JPH09227286A (ja) * | 1996-02-24 | 1997-09-02 | Komatsu Electron Metals Co Ltd | 単結晶製造装置 |
JP3482979B2 (ja) * | 1996-04-09 | 2004-01-06 | 三菱住友シリコン株式会社 | 単結晶引上装置におけるヒーター電極溶損防止装置 |
-
1996
- 1996-03-27 JP JP8097704A patent/JPH09263491A/ja active Pending
-
1997
- 1997-03-20 US US08/822,088 patent/US5968266A/en not_active Expired - Fee Related
- 1997-03-20 TW TW086103535A patent/TW531572B/zh not_active IP Right Cessation
- 1997-03-24 DE DE69706589T patent/DE69706589T2/de not_active Expired - Fee Related
- 1997-03-24 EP EP97301967A patent/EP0798404B1/de not_active Expired - Lifetime
- 1997-03-27 KR KR1019970010889A patent/KR100482812B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112010005100B4 (de) * | 2010-01-08 | 2020-02-13 | Shin-Etsu Handotai Co., Ltd. | Einkristall-Herstellungsvorrichtung |
Also Published As
Publication number | Publication date |
---|---|
KR970065778A (ko) | 1997-10-13 |
EP0798404B1 (de) | 2001-09-12 |
KR100482812B1 (ko) | 2005-08-09 |
TW531572B (en) | 2003-05-11 |
JPH09263491A (ja) | 1997-10-07 |
EP0798404A2 (de) | 1997-10-01 |
DE69706589D1 (de) | 2001-10-18 |
US5968266A (en) | 1999-10-19 |
EP0798404A3 (de) | 1997-11-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |