JPS5238873A - Electron gun - Google Patents
Electron gunInfo
- Publication number
- JPS5238873A JPS5238873A JP50114299A JP11429975A JPS5238873A JP S5238873 A JPS5238873 A JP S5238873A JP 50114299 A JP50114299 A JP 50114299A JP 11429975 A JP11429975 A JP 11429975A JP S5238873 A JPS5238873 A JP S5238873A
- Authority
- JP
- Japan
- Prior art keywords
- electron gun
- contact
- thermoelectron emitter
- stableh
- hexaboride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electron Sources, Ion Sources (AREA)
- Solid Thermionic Cathode (AREA)
Abstract
PURPOSE:To enable stableh eating for a long time in contact with the thermoelectron emitter such as hexaboride of chemical activity and to suppress the changes in the electron emission characteristics due to the sublimation of thermoelectron emitter and the contact condition change of the object to be heated with this.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50114299A JPS5238873A (en) | 1975-09-23 | 1975-09-23 | Electron gun |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50114299A JPS5238873A (en) | 1975-09-23 | 1975-09-23 | Electron gun |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5238873A true JPS5238873A (en) | 1977-03-25 |
Family
ID=14634380
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50114299A Pending JPS5238873A (en) | 1975-09-23 | 1975-09-23 | Electron gun |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5238873A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5976247A (en) * | 1995-06-14 | 1999-11-02 | Memc Electronic Materials, Inc. | Surface-treated crucibles for improved zero dislocation performance |
US5980629A (en) * | 1995-06-14 | 1999-11-09 | Memc Electronic Materials, Inc. | Methods for improving zero dislocation yield of single crystals |
US6479108B2 (en) | 2000-11-15 | 2002-11-12 | G.T. Equipment Technologies, Inc. | Protective layer for quartz crucibles used for silicon crystallization |
JP2019153563A (en) * | 2018-03-06 | 2019-09-12 | 株式会社Param | Electron gun |
WO2019172433A1 (en) * | 2018-03-09 | 2019-09-12 | Atonarp Inc. | Device including an ionizer |
-
1975
- 1975-09-23 JP JP50114299A patent/JPS5238873A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5976247A (en) * | 1995-06-14 | 1999-11-02 | Memc Electronic Materials, Inc. | Surface-treated crucibles for improved zero dislocation performance |
US5980629A (en) * | 1995-06-14 | 1999-11-09 | Memc Electronic Materials, Inc. | Methods for improving zero dislocation yield of single crystals |
US6479108B2 (en) | 2000-11-15 | 2002-11-12 | G.T. Equipment Technologies, Inc. | Protective layer for quartz crucibles used for silicon crystallization |
JP2019153563A (en) * | 2018-03-06 | 2019-09-12 | 株式会社Param | Electron gun |
WO2019172433A1 (en) * | 2018-03-09 | 2019-09-12 | Atonarp Inc. | Device including an ionizer |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Effective date: 20050606 Free format text: JAPANESE INTERMEDIATE CODE: A523 |
|
A621 | Written request for application examination |
Effective date: 20050606 Free format text: JAPANESE INTERMEDIATE CODE: A621 |
|
A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20080423 |