DE69331177D1 - Halbleiter Bauelement mit epitaktischem vielschicht-spiegel - Google Patents

Halbleiter Bauelement mit epitaktischem vielschicht-spiegel

Info

Publication number
DE69331177D1
DE69331177D1 DE69331177T DE69331177T DE69331177D1 DE 69331177 D1 DE69331177 D1 DE 69331177D1 DE 69331177 T DE69331177 T DE 69331177T DE 69331177 T DE69331177 T DE 69331177T DE 69331177 D1 DE69331177 D1 DE 69331177D1
Authority
DE
Germany
Prior art keywords
semiconductor component
multilayer mirror
epitaxial multilayer
epitaxial
mirror
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69331177T
Other languages
English (en)
Other versions
DE69331177T2 (de
Inventor
John Condon Bean
David Lee Windt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE69331177D1 publication Critical patent/DE69331177D1/de
Publication of DE69331177T2 publication Critical patent/DE69331177T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3223—IV compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/923—Physical dimension
    • Y10S428/924—Composite
    • Y10S428/925—Relative dimension specified
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12632—Four or more distinct components with alternate recurrence of each type component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12674—Ge- or Si-base component
DE69331177T 1992-08-03 1993-07-22 Halbleiter Bauelement mit epitaktischem vielschicht-spiegel Expired - Fee Related DE69331177T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/924,275 US5244749A (en) 1992-08-03 1992-08-03 Article comprising an epitaxial multilayer mirror

Publications (2)

Publication Number Publication Date
DE69331177D1 true DE69331177D1 (de) 2002-01-03
DE69331177T2 DE69331177T2 (de) 2002-07-04

Family

ID=25450000

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69331177T Expired - Fee Related DE69331177T2 (de) 1992-08-03 1993-07-22 Halbleiter Bauelement mit epitaktischem vielschicht-spiegel

Country Status (4)

Country Link
US (1) US5244749A (de)
EP (1) EP0582407B1 (de)
JP (1) JP2959933B2 (de)
DE (1) DE69331177T2 (de)

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US5323416A (en) * 1993-08-20 1994-06-21 Bell Communications Research, Inc. Planarized interference mirror
US5937274A (en) * 1995-01-31 1999-08-10 Hitachi, Ltd. Fabrication method for AlGaIn NPAsSb based devices
JP3691544B2 (ja) * 1995-04-28 2005-09-07 アジレント・テクノロジーズ・インク 面発光レーザの製造方法
DE19614774C2 (de) * 1996-04-03 2000-01-13 Joachim Sukmanowski Reflektorvorrichtung und ihre Verwendung in Dünnschicht-Solarzellen
DE19720629A1 (de) * 1997-05-16 1998-11-19 Scherrer Inst Paul Polarisationsempfindlicher Lichtwandler
US6110607A (en) * 1998-02-20 2000-08-29 The Regents Of The University Of California High reflectance-low stress Mo-Si multilayer reflective coatings
US5960024A (en) 1998-03-30 1999-09-28 Bandwidth Unlimited, Inc. Vertical optical cavities produced with selective area epitaxy
US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6535541B1 (en) 1998-04-14 2003-03-18 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6493373B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6493371B1 (en) 1998-04-14 2002-12-10 Bandwidth9, Inc. Vertical cavity apparatus with tunnel junction
US6493372B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6487231B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6760357B1 (en) 1998-04-14 2004-07-06 Bandwidth9 Vertical cavity apparatus with tunnel junction
US6487230B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6226425B1 (en) 1999-02-24 2001-05-01 Bandwidth9 Flexible optical multiplexer
US6233263B1 (en) 1999-06-04 2001-05-15 Bandwidth9 Monitoring and control assembly for wavelength stabilized optical system
US6275513B1 (en) 1999-06-04 2001-08-14 Bandwidth 9 Hermetically sealed semiconductor laser device
US6680496B1 (en) * 2002-07-08 2004-01-20 Amberwave Systems Corp. Back-biasing to populate strained layer quantum wells
JP4092570B2 (ja) * 2003-07-23 2008-05-28 セイコーエプソン株式会社 光素子およびその製造方法、光モジュール、ならびに光モジュールの駆動方法
DE102005013640A1 (de) * 2005-03-24 2006-10-05 Atmel Germany Gmbh Halbleiter-Photodetektor und Verfahren zum Herstellen desselben
JP4300245B2 (ja) * 2006-08-25 2009-07-22 キヤノン株式会社 多層膜反射鏡を備えた光学素子、面発光レーザ
US11121271B2 (en) 2013-05-22 2021-09-14 W&WSens, Devices, Inc. Microstructure enhanced absorption photosensitive devices
WO2014190189A2 (en) 2013-05-22 2014-11-27 Shih-Yuan Wang Microstructure enhanced absorption photosensitive devices
US10468543B2 (en) 2013-05-22 2019-11-05 W&Wsens Devices, Inc. Microstructure enhanced absorption photosensitive devices
US10700225B2 (en) 2013-05-22 2020-06-30 W&Wsens Devices, Inc. Microstructure enhanced absorption photosensitive devices
WO2017112747A1 (en) * 2015-12-21 2017-06-29 W&Wsens Devices, Inc. Microstructure enhanced absorption photosensitive devices
US10446700B2 (en) 2013-05-22 2019-10-15 W&Wsens Devices, Inc. Microstructure enhanced absorption photosensitive devices
JP6534888B2 (ja) * 2015-07-30 2019-06-26 技術研究組合光電子融合基盤技術研究所 面型光検出器
US11114822B2 (en) * 2019-08-27 2021-09-07 Kabushiki Kaisha Toshiba Optical semiconductor element
JP2021114594A (ja) * 2019-08-27 2021-08-05 株式会社東芝 光半導体素子

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JPS5538011A (en) * 1978-09-08 1980-03-17 Oki Electric Ind Co Ltd Manufacturing of semiconductor light-receiving device
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JPS6081887A (ja) * 1983-10-12 1985-05-09 Rohm Co Ltd 面発光レ−ザおよびその製造方法
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US4861393A (en) * 1983-10-28 1989-08-29 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor heterostructures having Gex Si1-x layers on Si utilizing molecular beam epitaxy
JPS6097684A (ja) * 1983-10-31 1985-05-31 Rohm Co Ltd 半導体レーザ
JPS61137388A (ja) * 1984-12-10 1986-06-25 Matsushita Electric Ind Co Ltd 半導体レ−ザ
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JPS62211784A (ja) * 1986-03-13 1987-09-17 Nippon Gakki Seizo Kk 表示制御装置
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US5063569A (en) * 1990-12-19 1991-11-05 At&T Bell Laboratories Vertical-cavity surface-emitting laser with non-epitaxial multilayered dielectric reflectors located on both surfaces
US5088099A (en) * 1990-12-20 1992-02-11 At&T Bell Laboratories Apparatus comprising a laser adapted for emission of single mode radiation having low transverse divergence

Also Published As

Publication number Publication date
JP2959933B2 (ja) 1999-10-06
JPH06163976A (ja) 1994-06-10
EP0582407A3 (en) 1997-03-12
EP0582407A2 (de) 1994-02-09
US5244749A (en) 1993-09-14
EP0582407B1 (de) 2001-11-21
DE69331177T2 (de) 2002-07-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee