DE69217466D1 - Halbleiterlaser mit reduzierter Temperaturabhängigkeit - Google Patents

Halbleiterlaser mit reduzierter Temperaturabhängigkeit

Info

Publication number
DE69217466D1
DE69217466D1 DE69217466T DE69217466T DE69217466D1 DE 69217466 D1 DE69217466 D1 DE 69217466D1 DE 69217466 T DE69217466 T DE 69217466T DE 69217466 T DE69217466 T DE 69217466T DE 69217466 D1 DE69217466 D1 DE 69217466D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
temperature dependence
reduced temperature
reduced
dependence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69217466T
Other languages
English (en)
Other versions
DE69217466T2 (de
Inventor
Won-Tien Tsang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69217466D1 publication Critical patent/DE69217466D1/de
Application granted granted Critical
Publication of DE69217466T2 publication Critical patent/DE69217466T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69217466T 1991-12-20 1992-11-20 Halbleiterlaser mit reduzierter Temperaturabhängigkeit Expired - Lifetime DE69217466T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/812,906 US5224113A (en) 1991-12-20 1991-12-20 Semiconductor laser having reduced temperature dependence

Publications (2)

Publication Number Publication Date
DE69217466D1 true DE69217466D1 (de) 1997-03-27
DE69217466T2 DE69217466T2 (de) 1997-08-28

Family

ID=25210931

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69217466T Expired - Lifetime DE69217466T2 (de) 1991-12-20 1992-11-20 Halbleiterlaser mit reduzierter Temperaturabhängigkeit

Country Status (4)

Country Link
US (1) US5224113A (de)
EP (1) EP0549123B1 (de)
JP (1) JPH0685403A (de)
DE (1) DE69217466T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5497389A (en) * 1993-06-25 1996-03-05 The Furukawa Electric Co., Ltd. Semiconductor laser device having an active layer and a resonator having a single reflector or pair of reflectors
US5629954A (en) * 1994-10-25 1997-05-13 Trw Inc. Semiconductor laser diode with integrated etalon
JPH09167873A (ja) * 1995-12-15 1997-06-24 Mitsubishi Electric Corp 半導体レーザ装置
US6438150B1 (en) * 1999-03-09 2002-08-20 Telecordia Technologies, Inc. Edge-emitting semiconductor laser having asymmetric interference filters
JP2001148537A (ja) 1999-11-18 2001-05-29 Nec Corp 半導体レーザ
GB2410124B (en) * 2004-01-14 2006-08-02 Agilent Technologies Inc Semiconductor laser with grating structure for stabilizing the wavelength of optical radiation
US7606282B2 (en) * 2007-12-21 2009-10-20 Finisar Corporation Optimizing VCSEL mirrors for improving temperature response
US10315275B2 (en) * 2013-01-24 2019-06-11 Wisconsin Alumni Research Foundation Reducing surface asperities

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4092659A (en) * 1977-04-28 1978-05-30 Rca Corporation Multi-layer reflector for electroluminescent device
JPS54993A (en) * 1977-06-06 1979-01-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser unit
JPS59145588A (ja) * 1983-02-09 1984-08-21 Hitachi Ltd 半導体レ−ザ装置
JPS6045084A (ja) * 1983-08-22 1985-03-11 Nec Corp 分布帰還型半導体レ−ザ
JPS61100991A (ja) * 1984-10-22 1986-05-19 Sharp Corp 半導体レ−ザ素子
JPS63222487A (ja) * 1987-03-11 1988-09-16 Fujitsu Ltd 半導体発光装置の製造方法
JP2663437B2 (ja) * 1987-05-27 1997-10-15 ソニー株式会社 半導体レーザ装置
DE3728305A1 (de) * 1987-08-25 1989-03-09 Standard Elektrik Lorenz Ag Halbleiterlaser mit konstanter differentieller quantenausbeute oder konstanter optischer ausgangsleistung
JPH01184893A (ja) * 1988-01-13 1989-07-24 Canon Inc 半導体レーザー
JP2863773B2 (ja) * 1988-12-28 1999-03-03 科学技術振興事業団 面発光型半導体レーザ装置
JPH0330484A (ja) * 1989-06-28 1991-02-08 Furukawa Electric Co Ltd:The 量子井戸半導体レーザ素子

Also Published As

Publication number Publication date
EP0549123A3 (en) 1993-09-15
JPH0685403A (ja) 1994-03-25
US5224113A (en) 1993-06-29
DE69217466T2 (de) 1997-08-28
EP0549123B1 (de) 1997-02-12
EP0549123A2 (de) 1993-06-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition