DE69210343T2 - Hochleistungslaser mit Halbleiterfilter - Google Patents

Hochleistungslaser mit Halbleiterfilter

Info

Publication number
DE69210343T2
DE69210343T2 DE69210343T DE69210343T DE69210343T2 DE 69210343 T2 DE69210343 T2 DE 69210343T2 DE 69210343 T DE69210343 T DE 69210343T DE 69210343 T DE69210343 T DE 69210343T DE 69210343 T2 DE69210343 T2 DE 69210343T2
Authority
DE
Germany
Prior art keywords
high power
power laser
semiconductor filter
semiconductor
filter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69210343T
Other languages
English (en)
Other versions
DE69210343D1 (de
Inventor
Jean-Paul Pocholle
Jean-Marc Breteau
Michel Papuchon
Claude Puech
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of DE69210343D1 publication Critical patent/DE69210343D1/de
Application granted granted Critical
Publication of DE69210343T2 publication Critical patent/DE69210343T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08004—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/207—Filters comprising semiconducting materials
DE69210343T 1991-09-24 1992-09-15 Hochleistungslaser mit Halbleiterfilter Expired - Fee Related DE69210343T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9111740A FR2681738B1 (fr) 1991-09-24 1991-09-24 Lasers de puissance a filtre semiconducteur.

Publications (2)

Publication Number Publication Date
DE69210343D1 DE69210343D1 (de) 1996-06-05
DE69210343T2 true DE69210343T2 (de) 1996-09-19

Family

ID=9417230

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69210343T Expired - Fee Related DE69210343T2 (de) 1991-09-24 1992-09-15 Hochleistungslaser mit Halbleiterfilter

Country Status (4)

Country Link
US (1) US5384801A (de)
EP (1) EP0534821B1 (de)
DE (1) DE69210343T2 (de)
FR (1) FR2681738B1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2784185B1 (fr) 1998-10-06 2001-02-02 Thomson Csf Dispositif pour l'harmonisation entre une voie d'emission laser et une voie passive d'observation
FR2796211B1 (fr) 1999-07-09 2001-10-12 Thomson Csf Cavite optique instable pour faisceau laser
FR2814281B1 (fr) * 2000-09-19 2003-08-29 Thomson Lcd Matrice active tft pour capteur optique comportant une couche semi-conductrice photosensible, et capteur optique comportant une telle matrice
FR2825463B1 (fr) * 2001-05-30 2003-09-12 Thales Sa Gyrometre laser etat solide comportant un bloc resonateur
JP4680655B2 (ja) * 2005-04-01 2011-05-11 パナソニック株式会社 固体撮像装置及びその製造方法
US20150087082A1 (en) * 2013-09-24 2015-03-26 Applied Materials, Inc. Selective heating during semiconductor device processing to compensate for substrate uniformity variations

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511363A (en) * 1978-07-11 1980-01-26 Nippon Telegr & Teleph Corp <Ntt> Solid laser system
US4228349A (en) * 1978-08-28 1980-10-14 Rca Corporation III-V Direct-bandgap semiconductor optical filter
US4528464A (en) * 1983-02-28 1985-07-09 At&T Bell Laboratories Degenerate four-wave mixer using multiple quantum well structures
US4599728A (en) * 1983-07-11 1986-07-08 At&T Bell Laboratories Multi-quantum well laser emitting at 1.5 μm
EP0190635B1 (de) * 1985-01-30 1989-04-05 Siemens Aktiengesellschaft Gaslaser mit einem frequenzselektiven dielektrischen Schichtensystem
US4857971A (en) * 1987-03-23 1989-08-15 Xerox Corporation (IV)x (III-V)1-x alloys formed in situ in III-V heterostructures

Also Published As

Publication number Publication date
DE69210343D1 (de) 1996-06-05
EP0534821B1 (de) 1996-05-01
US5384801A (en) 1995-01-24
FR2681738A1 (fr) 1993-03-26
FR2681738B1 (fr) 1993-11-05
EP0534821A1 (de) 1993-03-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee