DE69232461T2 - Verfahren zum herstellen von transistoren mit isoliertem gate unter verwendung von platin zur kontrolle der lebensdauer - Google Patents
Verfahren zum herstellen von transistoren mit isoliertem gate unter verwendung von platin zur kontrolle der lebensdauerInfo
- Publication number
- DE69232461T2 DE69232461T2 DE69232461T DE69232461T DE69232461T2 DE 69232461 T2 DE69232461 T2 DE 69232461T2 DE 69232461 T DE69232461 T DE 69232461T DE 69232461 T DE69232461 T DE 69232461T DE 69232461 T2 DE69232461 T2 DE 69232461T2
- Authority
- DE
- Germany
- Prior art keywords
- platinum
- insulated gate
- producing transistors
- control lifetime
- lifetime
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052697 platinum Inorganic materials 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/6634—Vertical insulated gate bipolar transistors with a recess formed by etching in the source/emitter contact region
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
- H01L29/745—Gate-turn-off devices with turn-off by field effect
- H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thyristors (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US75144191A | 1991-08-28 | 1991-08-28 | |
US07/852,932 US5262336A (en) | 1986-03-21 | 1992-03-13 | IGBT process to produce platinum lifetime control |
PCT/US1992/007305 WO1993005535A1 (en) | 1991-08-28 | 1992-08-27 | Igbt process and device with platinum lifetime control |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69232461D1 DE69232461D1 (de) | 2002-04-11 |
DE69232461T2 true DE69232461T2 (de) | 2002-10-17 |
Family
ID=27115422
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69232461T Expired - Lifetime DE69232461T2 (de) | 1991-08-28 | 1992-08-27 | Verfahren zum herstellen von transistoren mit isoliertem gate unter verwendung von platin zur kontrolle der lebensdauer |
Country Status (5)
Country | Link |
---|---|
US (1) | US5262336A (de) |
EP (3) | EP0601093B1 (de) |
JP (1) | JPH06510400A (de) |
DE (1) | DE69232461T2 (de) |
WO (1) | WO1993005535A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004063959B4 (de) * | 2004-06-15 | 2010-06-02 | Infineon Technologies Ag | Verfahren zur Herstellung einer niederohmigen Anschlusselektrode als vergrabene metallische Schicht in einem Halbleiterkörper für ein Halbleiterbauelement |
Families Citing this family (73)
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US5576225A (en) * | 1992-05-09 | 1996-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming electric circuit using anodic oxidation |
GB9509301D0 (en) * | 1995-05-06 | 1995-06-28 | Atomic Energy Authority Uk | An improved process for the production of semi-conductor devices |
US5843796A (en) * | 1995-09-11 | 1998-12-01 | Delco Electronics Corporation | Method of making an insulated gate bipolar transistor with high-energy P+ im |
GB9625839D0 (en) * | 1996-12-12 | 1997-01-29 | Westinghouse Brake & Signal | Semiconductor switching devices |
US5932911A (en) * | 1996-12-13 | 1999-08-03 | Advanced Micro Devices, Inc. | Bar field effect transistor |
JP3622405B2 (ja) * | 1997-02-28 | 2005-02-23 | 株式会社日立製作所 | 半導体スイッチング素子及びigbtモジュール |
EP0893821A1 (de) * | 1997-07-21 | 1999-01-27 | STMicroelectronics S.r.l. | Verfahren zur Herstellung eines DMOS-Technologie-Transistors mit nur einer thermischen Behandlung für die Bildung von Source und Körpergebieten |
JP2001501383A (ja) * | 1997-07-30 | 2001-01-30 | シーメンス アクチエンゲゼルシヤフト | ゲート制御されるサイリスタ |
US5977639A (en) * | 1997-09-30 | 1999-11-02 | Intel Corporation | Metal staples to prevent interlayer delamination |
DE19845003C1 (de) * | 1998-09-30 | 2000-02-10 | Siemens Ag | Vertikaler Feldeffekttransistor mit innenliegendem ringförmigen Gate und Herstellverfahren |
US6326732B1 (en) * | 1999-02-16 | 2001-12-04 | International Business Machines Corporation | Apparatus and method for non-contact stress evaluation of wafer gate dielectric reliability |
US6461918B1 (en) | 1999-12-20 | 2002-10-08 | Fairchild Semiconductor Corporation | Power MOS device with improved gate charge performance |
EP1407476A4 (de) | 2000-08-08 | 2007-08-29 | Advanced Power Technology | Leistungs-mos-bauelement mit asymmetrischer kanalstruktur |
US7745289B2 (en) | 2000-08-16 | 2010-06-29 | Fairchild Semiconductor Corporation | Method of forming a FET having ultra-low on-resistance and low gate charge |
US6358825B1 (en) * | 2000-11-21 | 2002-03-19 | Fairchild Semiconductor Corporation | Process for controlling lifetime in a P-I-N diode and for forming diode with improved lifetime control |
US6710403B2 (en) | 2002-07-30 | 2004-03-23 | Fairchild Semiconductor Corporation | Dual trench power MOSFET |
US7132712B2 (en) | 2002-11-05 | 2006-11-07 | Fairchild Semiconductor Corporation | Trench structure having one or more diodes embedded therein adjacent a PN junction |
US6818513B2 (en) | 2001-01-30 | 2004-11-16 | Fairchild Semiconductor Corporation | Method of forming a field effect transistor having a lateral depletion structure |
US6916745B2 (en) | 2003-05-20 | 2005-07-12 | Fairchild Semiconductor Corporation | Structure and method for forming a trench MOSFET having self-aligned features |
US6677641B2 (en) | 2001-10-17 | 2004-01-13 | Fairchild Semiconductor Corporation | Semiconductor structure with improved smaller forward voltage loss and higher blocking capability |
US6803626B2 (en) | 2002-07-18 | 2004-10-12 | Fairchild Semiconductor Corporation | Vertical charge control semiconductor device |
US7345342B2 (en) | 2001-01-30 | 2008-03-18 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
DE10205324B4 (de) * | 2001-02-09 | 2012-04-19 | Fuji Electric Co., Ltd. | Halbleiterbauelement |
US6683363B2 (en) | 2001-07-03 | 2004-01-27 | Fairchild Semiconductor Corporation | Trench structure for semiconductor devices |
US6893983B2 (en) * | 2001-09-13 | 2005-05-17 | Tech Semiconductor Singapore Pte Ltd. | Method for depositing a very high phosphorus doped silicon oxide film |
US7061066B2 (en) | 2001-10-17 | 2006-06-13 | Fairchild Semiconductor Corporation | Schottky diode using charge balance structure |
KR100859701B1 (ko) | 2002-02-23 | 2008-09-23 | 페어차일드코리아반도체 주식회사 | 고전압 수평형 디모스 트랜지스터 및 그 제조 방법 |
US6593199B1 (en) * | 2002-02-27 | 2003-07-15 | Motorola, Inc. | Method of manufacturing a semiconductor component and semiconductor component thereof |
US6780788B2 (en) * | 2002-08-07 | 2004-08-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Methods for improving within-wafer uniformity of gate oxide |
US7033891B2 (en) | 2002-10-03 | 2006-04-25 | Fairchild Semiconductor Corporation | Trench gate laterally diffused MOSFET devices and methods for making such devices |
US7576388B1 (en) | 2002-10-03 | 2009-08-18 | Fairchild Semiconductor Corporation | Trench-gate LDMOS structures |
US6710418B1 (en) | 2002-10-11 | 2004-03-23 | Fairchild Semiconductor Corporation | Schottky rectifier with insulation-filled trenches and method of forming the same |
US7169634B2 (en) * | 2003-01-15 | 2007-01-30 | Advanced Power Technology, Inc. | Design and fabrication of rugged FRED |
US7652326B2 (en) | 2003-05-20 | 2010-01-26 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
KR100994719B1 (ko) | 2003-11-28 | 2010-11-16 | 페어차일드코리아반도체 주식회사 | 슈퍼정션 반도체장치 |
US7368777B2 (en) | 2003-12-30 | 2008-05-06 | Fairchild Semiconductor Corporation | Accumulation device with charge balance structure and method of forming the same |
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- 1992-08-27 EP EP92919301A patent/EP0601093B1/de not_active Expired - Lifetime
- 1992-08-27 DE DE69232461T patent/DE69232461T2/de not_active Expired - Lifetime
- 1992-08-27 EP EP01119437A patent/EP1182707A3/de not_active Withdrawn
- 1992-08-27 JP JP5505313A patent/JPH06510400A/ja active Pending
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DE102004063959B4 (de) * | 2004-06-15 | 2010-06-02 | Infineon Technologies Ag | Verfahren zur Herstellung einer niederohmigen Anschlusselektrode als vergrabene metallische Schicht in einem Halbleiterkörper für ein Halbleiterbauelement |
Also Published As
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EP1182707A2 (de) | 2002-02-27 |
EP1182706A2 (de) | 2002-02-27 |
JPH06510400A (ja) | 1994-11-17 |
US5262336A (en) | 1993-11-16 |
WO1993005535A1 (en) | 1993-03-18 |
EP1182706A3 (de) | 2003-10-08 |
DE69232461D1 (de) | 2002-04-11 |
EP0601093A1 (de) | 1994-06-15 |
EP0601093B1 (de) | 2002-03-06 |
EP1182707A3 (de) | 2003-10-08 |
EP0601093A4 (de) | 1995-04-12 |
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