JP2001501383A - ゲート制御されるサイリスタ - Google Patents
ゲート制御されるサイリスタInfo
- Publication number
- JP2001501383A JP2001501383A JP11510392A JP51039299A JP2001501383A JP 2001501383 A JP2001501383 A JP 2001501383A JP 11510392 A JP11510392 A JP 11510392A JP 51039299 A JP51039299 A JP 51039299A JP 2001501383 A JP2001501383 A JP 2001501383A
- Authority
- JP
- Japan
- Prior art keywords
- cell
- thyristor
- thyristor according
- zone
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 230000006798 recombination Effects 0.000 claims abstract description 9
- 238000005215 recombination Methods 0.000 claims abstract description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910021332 silicide Inorganic materials 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 230000007547 defect Effects 0.000 claims description 3
- 230000002708 enhancing effect Effects 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 3
- 239000000969 carrier Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000005574 cross-species transmission Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.第1のセル(B)におけるIGBTおよび主セル(A)におけるサイスタ が、該第1のセル(B)および主セル(A)が第1の導電型のチャネルを有する ラテラルFETを形成するように相互接続されている、ゲート制御されるサイリ スタにおいて、 前記サイリスタのエミッタ帯域(9)に、キャリアの再結合を高める層(15) が埋め込まれている ことを特徴とするサイリスタ。 2.前記ラテラルFETに、少なくとも1つのトレンチ(20)が形成されて おり、該トレンチに、絶縁されたゲート電極が設けられている 請求項1記載のサイリスタ。 3.前記キャリアの再結合を高める層(15)は金属またはケイ化物、殊にア ルミニウムおよび/またはチタンケイ化物から形成されている 請求項1または2記載のサイリスタ。 4.前記主セル(A)に更に、MOSスイッチを有する第2のセル(C)が接 続されており、該第2のセルは前記主セル(A)と共に、第2の導電型のチャネ ルを有するFETを形成する 請求項1から3までのいずれか1項記載のサイリスタ。 5.前記第2のセルのFETにも、ゲート電極を備 えた少なくとも1つのトレンチが形成されている 請求項4記載のサイリスタ。 6.前記第1のセルおよび第2のセル(B,C)の少なくとも1つのセルの下 に、絶縁層(16)が配置されている 請求項1から5までのいずれか1項記載のサイリスタ。 7.前記絶縁層(16)は前記主セル(A)の下にまで達している 請求項6記載のサイリスタ。 8.サイリスタのpベース層(5)は開口(17)を備えている 請求項7記載のサイリスタ。 9.n導電性のベース帯域(3)はエピタキシャル成長されておりかつ再結合 中心を備えている 請求項1から8までのいずれか1項記載のサイリスタ、 10.n導電性のバース帯域(3)の部分に、再結合中心、例えば金、白金によ ってまたは照射によって生成される結晶欠陥が施されている 請求項9記載のサイリスタ。 11.サイリスタの半導体基体全体は全体がまたは部分に、再結合中心、例えば 金、白金によってまたは照射によって生成される結晶欠陥が施されている 請求項9記載のサイリスタ。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1997132912 DE19732912C2 (de) | 1997-07-30 | 1997-07-30 | Kaskoden-MOS-Thyristor |
DE1997139498 DE19739498C1 (de) | 1997-09-09 | 1997-09-09 | Gate-gesteuerter Thyristor |
DE19739498.1 | 1997-09-09 | ||
DE19732912.8 | 1997-09-09 | ||
PCT/DE1998/002154 WO1999007020A1 (de) | 1997-07-30 | 1998-07-29 | Gate-gesteuerter thyristor |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2001501383A true JP2001501383A (ja) | 2001-01-30 |
Family
ID=26038714
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11510392A Ceased JP2001501383A (ja) | 1997-07-30 | 1998-07-29 | ゲート制御されるサイリスタ |
Country Status (4)
Country | Link |
---|---|
US (1) | US6313485B1 (ja) |
EP (1) | EP0931352A1 (ja) |
JP (1) | JP2001501383A (ja) |
WO (1) | WO1999007020A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3571353B2 (ja) * | 1998-09-10 | 2004-09-29 | 三菱電機株式会社 | 半導体装置 |
WO2007135694A1 (en) * | 2006-05-18 | 2007-11-29 | Stmicroelectronics S.R.L. | Three- terminal power device with high switching speed and manufacturing process |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4007474A (en) * | 1972-12-29 | 1977-02-08 | Sony Corporation | Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion |
DE3024015A1 (de) * | 1980-06-26 | 1982-01-07 | Siemens AG, 1000 Berlin und 8000 München | Steuerbarer halbleiterschalter |
US5262336A (en) * | 1986-03-21 | 1993-11-16 | Advanced Power Technology, Inc. | IGBT process to produce platinum lifetime control |
GB2213988B (en) | 1987-12-18 | 1992-02-05 | Matsushita Electric Works Ltd | Semiconductor device |
US4982258A (en) | 1988-05-02 | 1991-01-01 | General Electric Company | Metal oxide semiconductor gated turn-off thyristor including a low lifetime region |
JP2752184B2 (ja) * | 1989-09-11 | 1998-05-18 | 株式会社東芝 | 電力用半導体装置 |
JPH03253078A (ja) * | 1989-12-21 | 1991-11-12 | Asea Brown Boveri Ag | 遮断可能なパワー半導体素子 |
JP3321185B2 (ja) * | 1990-09-28 | 2002-09-03 | 株式会社東芝 | 高耐圧半導体装置 |
US5306930A (en) * | 1992-12-14 | 1994-04-26 | North Carolina State University At Raleigh | Emitter switched thyristor with buried dielectric layer |
JP2951134B2 (ja) * | 1992-12-18 | 1999-09-20 | 株式会社日立製作所 | 半導体スイッチング素子 |
FR2712428B1 (fr) * | 1993-11-10 | 1996-02-09 | Sgs Thomson Microelectronics | Commutateur bidirectionnel à commande en tension. |
-
1998
- 1998-07-29 EP EP98945056A patent/EP0931352A1/de not_active Withdrawn
- 1998-07-29 JP JP11510392A patent/JP2001501383A/ja not_active Ceased
- 1998-07-29 WO PCT/DE1998/002154 patent/WO1999007020A1/de not_active Application Discontinuation
-
1999
- 1999-03-30 US US09/281,690 patent/US6313485B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO1999007020A1 (de) | 1999-02-11 |
US6313485B1 (en) | 2001-11-06 |
EP0931352A1 (de) | 1999-07-28 |
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Legal Events
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