IT964137B - Accrescimento di strati isolanti in particolare per dispositivi semiconduttori - Google Patents
Accrescimento di strati isolanti in particolare per dispositivi semiconduttoriInfo
- Publication number
- IT964137B IT964137B IT28360/72A IT2836072A IT964137B IT 964137 B IT964137 B IT 964137B IT 28360/72 A IT28360/72 A IT 28360/72A IT 2836072 A IT2836072 A IT 2836072A IT 964137 B IT964137 B IT 964137B
- Authority
- IT
- Italy
- Prior art keywords
- growth
- semiconductor devices
- insulating layers
- insulating
- layers
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US18383371A | 1971-09-27 | 1971-09-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
IT964137B true IT964137B (it) | 1974-01-21 |
Family
ID=22674479
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT28360/72A IT964137B (it) | 1971-09-27 | 1972-08-22 | Accrescimento di strati isolanti in particolare per dispositivi semiconduttori |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5338916B2 (it) |
CA (1) | CA974153A (it) |
DE (1) | DE2243285A1 (it) |
FR (1) | FR2154664B1 (it) |
GB (1) | GB1407222A (it) |
IT (1) | IT964137B (it) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8507601D0 (en) * | 1985-03-23 | 1985-05-01 | Standard Telephones Cables Ltd | Integrated circuits |
US5262336A (en) * | 1986-03-21 | 1993-11-16 | Advanced Power Technology, Inc. | IGBT process to produce platinum lifetime control |
DE3856483T2 (de) * | 1987-03-18 | 2002-04-18 | Kabushiki Kaisha Toshiba, Kawasaki | Verfahren zur Herstellung von Dünnschichten |
US6838741B2 (en) * | 2002-12-10 | 2005-01-04 | General Electtric Company | Avalanche photodiode for use in harsh environments |
-
1972
- 1972-08-22 IT IT28360/72A patent/IT964137B/it active
- 1972-08-30 GB GB4015772A patent/GB1407222A/en not_active Expired
- 1972-09-02 DE DE2243285A patent/DE2243285A1/de not_active Withdrawn
- 1972-09-04 JP JP8803072A patent/JPS5338916B2/ja not_active Expired
- 1972-09-14 CA CA151,676A patent/CA974153A/en not_active Expired
- 1972-09-20 FR FR7234255A patent/FR2154664B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5338916B2 (it) | 1978-10-18 |
CA974153A (en) | 1975-09-09 |
DE2243285A1 (de) | 1973-04-05 |
FR2154664B1 (it) | 1976-05-21 |
FR2154664A1 (it) | 1973-05-11 |
JPS4842678A (it) | 1973-06-21 |
GB1407222A (en) | 1975-09-24 |
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