IT968985B - Metodo di fabbricazione di dispo sitivi semiconduttori incorporan ti silicio policristallino - Google Patents
Metodo di fabbricazione di dispo sitivi semiconduttori incorporan ti silicio policristallinoInfo
- Publication number
- IT968985B IT968985B IT3053172A IT3053172A IT968985B IT 968985 B IT968985 B IT 968985B IT 3053172 A IT3053172 A IT 3053172A IT 3053172 A IT3053172 A IT 3053172A IT 968985 B IT968985 B IT 968985B
- Authority
- IT
- Italy
- Prior art keywords
- manufacturing
- polycrystalline silicon
- silicon devices
- semiconductor incorporated
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US19071971A | 1971-10-20 | 1971-10-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT968985B true IT968985B (it) | 1974-03-20 |
Family
ID=22702482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT3053172A IT968985B (it) | 1971-10-20 | 1972-10-16 | Metodo di fabbricazione di dispo sitivi semiconduttori incorporan ti silicio policristallino |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5234193B2 (it) |
| CA (1) | CA969290A (it) |
| DE (1) | DE2250570A1 (it) |
| GB (1) | GB1384153A (it) |
| IT (1) | IT968985B (it) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5258360A (en) * | 1975-11-10 | 1977-05-13 | Toshiba Corp | Production of semiconductor device |
| NL7612883A (nl) * | 1976-11-19 | 1978-05-23 | Philips Nv | Halfgeleiderinrichting, en werkwijze ter ver- vaardiging daarvan. |
| JPS5423386A (en) * | 1977-07-22 | 1979-02-21 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS57100949U (it) * | 1980-12-09 | 1982-06-21 | ||
| GB8507624D0 (en) * | 1985-03-23 | 1985-05-01 | Standard Telephones Cables Ltd | Semiconductor devices |
| JPH07101694B2 (ja) * | 1989-02-08 | 1995-11-01 | 株式会社日立製作所 | 半導体装置の製造方法 |
-
1972
- 1972-09-20 CA CA152,188A patent/CA969290A/en not_active Expired
- 1972-10-12 GB GB4721772A patent/GB1384153A/en not_active Expired
- 1972-10-14 DE DE19722250570 patent/DE2250570A1/de active Pending
- 1972-10-16 IT IT3053172A patent/IT968985B/it active
- 1972-10-19 JP JP10483972A patent/JPS5234193B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1384153A (en) | 1975-02-19 |
| CA969290A (en) | 1975-06-10 |
| JPS5234193B2 (it) | 1977-09-01 |
| JPS4850677A (it) | 1973-07-17 |
| DE2250570A1 (de) | 1973-04-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1348391A (en) | Methods of manufacturing semiconductor devices | |
| IT1025054B (it) | Dispositivo semiconduttore stabilizzato e metodo di fabbricazione dello stesso | |
| JPS51139269A (en) | Method of manufacturing semiconductor element | |
| MY7600090A (en) | Fabrication of semiconductor devices | |
| AT361042B (de) | Integrierte halbleiterschaltung | |
| GB1343334A (en) | Fabrication of semiconductor devices | |
| IT1010166B (it) | Metodo per la fabbricazione di dispositivi semiconduttori | |
| CH538194A (de) | Halbleiteranordnung | |
| IT976112B (it) | Procedimento per la fabbricazione di dispositivi semiconduttori | |
| BE788036A (fr) | Elements semiconducteurs piezo-electriques | |
| IT968985B (it) | Metodo di fabbricazione di dispo sitivi semiconduttori incorporan ti silicio policristallino | |
| IT943198B (it) | Procedimento per la fabbricazione di monocristalli semiconduttori | |
| IT962297B (it) | Mordenzatura di s13 n4 | |
| BE769289A (fr) | Procede de fabrication de tetrafluorure de silicium | |
| IT952873B (it) | Dispositivo semiconduttore | |
| IT964137B (it) | Accrescimento di strati isolanti in particolare per dispositivi semiconduttori | |
| CH545006A (de) | Halbleiteranordnung | |
| CH539948A (de) | Silizium-Halbleiter-Bauelement | |
| IT976005B (it) | Procedimento per la fabbricazione di dispositivi semiconduttori | |
| IT975824B (it) | Procedimento per al fabbricazione di dispositivi semiconduttori ottenuti col procedimento | |
| IT952930B (it) | Procedimento per la fabbricazione di circuiti integrati al silicio | |
| IT949161B (it) | Dispositivo semiconduttore | |
| SE408354B (sv) | Styrbar halvledarlikriktare | |
| CH517379A (de) | Halbleitervorrichtung | |
| IT952874B (it) | Procedimento per la fabbricazione di dispositivi semiconduttori |