IT952930B - Procedimento per la fabbricazione di circuiti integrati al silicio - Google Patents
Procedimento per la fabbricazione di circuiti integrati al silicioInfo
- Publication number
- IT952930B IT952930B IT6772972A IT6772972A IT952930B IT 952930 B IT952930 B IT 952930B IT 6772972 A IT6772972 A IT 6772972A IT 6772972 A IT6772972 A IT 6772972A IT 952930 B IT952930 B IT 952930B
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- manufacture
- integrated circuits
- silicon integrated
- silicon
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7108025A FR2128164B1 (it) | 1971-03-09 | 1971-03-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT952930B true IT952930B (it) | 1973-07-30 |
Family
ID=9073164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT6772972A IT952930B (it) | 1971-03-09 | 1972-03-08 | Procedimento per la fabbricazione di circuiti integrati al silicio |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE780423A (it) |
| FR (1) | FR2128164B1 (it) |
| GB (1) | GB1380143A (it) |
| IT (1) | IT952930B (it) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5262336A (en) * | 1986-03-21 | 1993-11-16 | Advanced Power Technology, Inc. | IGBT process to produce platinum lifetime control |
| EP0675527B1 (en) * | 1994-03-30 | 1999-11-10 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | Manufacturing process for obtaining bipolar transistors with controlled storage time |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3590471A (en) * | 1969-02-04 | 1971-07-06 | Bell Telephone Labor Inc | Fabrication of insulated gate field-effect transistors involving ion implantation |
-
1971
- 1971-03-09 FR FR7108025A patent/FR2128164B1/fr not_active Expired
-
1972
- 1972-03-08 IT IT6772972A patent/IT952930B/it active
- 1972-03-09 BE BE780423A patent/BE780423A/xx unknown
- 1972-03-09 GB GB1114772A patent/GB1380143A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| BE780423A (fr) | 1972-07-03 |
| GB1380143A (it) | 1975-01-08 |
| FR2128164A1 (it) | 1972-10-20 |
| FR2128164B1 (it) | 1973-11-30 |
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