GB1380143A - - Google Patents
Info
- Publication number
- GB1380143A GB1380143A GB1114772A GB1114772A GB1380143A GB 1380143 A GB1380143 A GB 1380143A GB 1114772 A GB1114772 A GB 1114772A GB 1114772 A GB1114772 A GB 1114772A GB 1380143 A GB1380143 A GB 1380143A
- Authority
- GB
- United Kingdom
- Prior art keywords
- platinum
- silicide
- march
- gold
- titanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 10
- 229910052697 platinum Inorganic materials 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910021332 silicide Inorganic materials 0.000 abstract 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052719 titanium Inorganic materials 0.000 abstract 2
- 239000010936 titanium Substances 0.000 abstract 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 239000002800 charge carrier Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 229910021339 platinum silicide Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7108025A FR2128164B1 (it) | 1971-03-09 | 1971-03-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1380143A true GB1380143A (it) | 1975-01-08 |
Family
ID=9073164
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1114772A Expired GB1380143A (it) | 1971-03-09 | 1972-03-09 |
Country Status (4)
Country | Link |
---|---|
BE (1) | BE780423A (it) |
FR (1) | FR2128164B1 (it) |
GB (1) | GB1380143A (it) |
IT (1) | IT952930B (it) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5262336A (en) * | 1986-03-21 | 1993-11-16 | Advanced Power Technology, Inc. | IGBT process to produce platinum lifetime control |
DE69421606T2 (de) * | 1994-03-30 | 2000-05-31 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | Verfahren zur Herstellung von bipolaren Transistoren mit kontrollierter Speicherzeit |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3590471A (en) * | 1969-02-04 | 1971-07-06 | Bell Telephone Labor Inc | Fabrication of insulated gate field-effect transistors involving ion implantation |
-
1971
- 1971-03-09 FR FR7108025A patent/FR2128164B1/fr not_active Expired
-
1972
- 1972-03-08 IT IT6772972A patent/IT952930B/it active
- 1972-03-09 GB GB1114772A patent/GB1380143A/en not_active Expired
- 1972-03-09 BE BE780423A patent/BE780423A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
IT952930B (it) | 1973-07-30 |
FR2128164B1 (it) | 1973-11-30 |
FR2128164A1 (it) | 1972-10-20 |
BE780423A (fr) | 1972-07-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PLNP | Patent lapsed through nonpayment of renewal fees |