BE780423A - Procede de fabrication de circuits integres au silicium - Google Patents
Procede de fabrication de circuits integres au siliciumInfo
- Publication number
- BE780423A BE780423A BE780423A BE780423A BE780423A BE 780423 A BE780423 A BE 780423A BE 780423 A BE780423 A BE 780423A BE 780423 A BE780423 A BE 780423A BE 780423 A BE780423 A BE 780423A
- Authority
- BE
- Belgium
- Prior art keywords
- manufacturing
- integrated circuits
- silicon integrated
- silicon
- circuits
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7108025A FR2128164B1 (fr) | 1971-03-09 | 1971-03-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE780423A true BE780423A (fr) | 1972-07-03 |
Family
ID=9073164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE780423A BE780423A (fr) | 1971-03-09 | 1972-03-09 | Procede de fabrication de circuits integres au silicium |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE780423A (fr) |
| FR (1) | FR2128164B1 (fr) |
| GB (1) | GB1380143A (fr) |
| IT (1) | IT952930B (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5262336A (en) * | 1986-03-21 | 1993-11-16 | Advanced Power Technology, Inc. | IGBT process to produce platinum lifetime control |
| DE69421606T2 (de) * | 1994-03-30 | 2000-05-31 | Cons Ric Microelettronica | Verfahren zur Herstellung von bipolaren Transistoren mit kontrollierter Speicherzeit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3590471A (en) * | 1969-02-04 | 1971-07-06 | Bell Telephone Labor Inc | Fabrication of insulated gate field-effect transistors involving ion implantation |
-
1971
- 1971-03-09 FR FR7108025A patent/FR2128164B1/fr not_active Expired
-
1972
- 1972-03-08 IT IT6772972A patent/IT952930B/it active
- 1972-03-09 GB GB1114772A patent/GB1380143A/en not_active Expired
- 1972-03-09 BE BE780423A patent/BE780423A/fr unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB1380143A (fr) | 1975-01-08 |
| IT952930B (it) | 1973-07-30 |
| FR2128164A1 (fr) | 1972-10-20 |
| FR2128164B1 (fr) | 1973-11-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| BE785150A (fr) | Procede pour la fabrication de dispositifs semiconducteurs | |
| AT361042B (de) | Integrierte halbleiterschaltung | |
| BE651287A (fr) | Procede de fabrication d'elements de circuit integre a semi-conducteurs | |
| BR7104397D0 (pt) | Processo de fabricacao de um dispositivo semicondutor | |
| BE789535A (fr) | Procede de fabrication d'alkoxysilanes | |
| IT1022974B (it) | Processo perfezionato per la fabbricazione di dispositivi semiconduttori | |
| BE786089A (fr) | Circuits integres monolithiques et leur procede de fabrication | |
| IT1010166B (it) | Metodo per la fabbricazione di dispositivi semiconduttori | |
| BE785287A (fr) | Procede de fabrication des conducteurs-poutres pour dispositifssemiconducteurs | |
| BE789534A (fr) | Procede de fabrication de silanes | |
| BE792908A (fr) | Procede de fabrication de dispositifs semi-conducteurs | |
| IT963413B (it) | Procedimento di fotoincisione particolarmente per la fabbrica zione di circuiti integrati | |
| BE763537A (fr) | Procede de fabrication de pieces moulees en silicium | |
| BE788159A (fr) | Procede de decapage du nitrure de silicium | |
| BE769289A (fr) | Procede de fabrication de tetrafluorure de silicium | |
| BE777392A (fr) | Procede de fabrication d'un composant a semiconducteurs | |
| IT987430B (it) | Processo perfezionato per la fabbricazione di dispositivi semiconduttori | |
| IT976262B (it) | Procedimento per la fabbricazione di corpi semiconduttori | |
| BE780423A (fr) | Procede de fabrication de circuits integres au silicium | |
| BE768643A (fr) | Procede de fabrication de gaufrettes semiconductrices ultraminces | |
| BE771137A (fr) | Structure en silicium polycristallin pour circuit integre et procede pour la former | |
| FR1395946A (fr) | Procédé de fabrication de carbure de silicium pigmentaire | |
| IT968985B (it) | Metodo di fabbricazione di dispo sitivi semiconduttori incorporan ti silicio policristallino | |
| BE766651A (fr) | Procede pour la fabrication de dispositifs semiconducteurs a circuits integres | |
| BE793344A (fr) | Procede de fabrication de tensio-actifs n'affectant pas l'effetdes substances hydrofugeantes |