BE651287A - Procede de fabrication d'elements de circuit integre a semi-conducteurs - Google Patents

Procede de fabrication d'elements de circuit integre a semi-conducteurs

Info

Publication number
BE651287A
BE651287A BE651287DA BE651287A BE 651287 A BE651287 A BE 651287A BE 651287D A BE651287D A BE 651287DA BE 651287 A BE651287 A BE 651287A
Authority
BE
Belgium
Prior art keywords
manufacturing
integrated circuit
semiconductor integrated
circuit elements
elements
Prior art date
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE651287A publication Critical patent/BE651287A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/945—Special, e.g. metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12389—All metal or with adjacent metals having variation in thickness
    • Y10T428/12396—Discontinuous surface component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12486—Laterally noncoextensive components [e.g., embedded, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12583—Component contains compound of adjacent metal
    • Y10T428/1259—Oxide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12674—Ge- or Si-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12736—Al-base component
    • Y10T428/1275—Next to Group VIII or IB metal-base component

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
BE651287D 1963-08-19 1964-07-31 Procede de fabrication d'elements de circuit integre a semi-conducteurs BE651287A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US302966A US3290753A (en) 1963-08-19 1963-08-19 Method of making semiconductor integrated circuit elements

Publications (1)

Publication Number Publication Date
BE651287A true BE651287A (fr) 1964-11-16

Family

ID=23170010

Family Applications (1)

Application Number Title Priority Date Filing Date
BE651287D BE651287A (fr) 1963-08-19 1964-07-31 Procede de fabrication d'elements de circuit integre a semi-conducteurs

Country Status (5)

Country Link
US (1) US3290753A (fr)
BE (1) BE651287A (fr)
CA (1) CA938384A (fr)
GB (1) GB1070278A (fr)
NL (1) NL6409176A (fr)

Families Citing this family (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3913121A (en) * 1963-12-16 1975-10-14 Signetics Corp Semiconductor structure
US3335038A (en) * 1964-03-30 1967-08-08 Ibm Methods of producing single crystals on polycrystalline substrates and devices using same
US3393349A (en) * 1964-04-30 1968-07-16 Motorola Inc Intergrated circuits having isolated islands with a plurality of semiconductor devices in each island
US3797102A (en) * 1964-04-30 1974-03-19 Motorola Inc Method of making semiconductor devices
DE1439706B2 (de) * 1964-07-29 1975-04-10 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Verfahren zur Herstellung einer mikrominiaturisierten Schaltungsanordnung
US3401450A (en) * 1964-07-29 1968-09-17 North American Rockwell Methods of making a semiconductor structure including opposite conductivity segments
US3369290A (en) * 1964-08-07 1968-02-20 Rca Corp Method of making passivated semiconductor devices
US3383760A (en) * 1965-08-09 1968-05-21 Rca Corp Method of making semiconductor devices
DE1439712A1 (de) * 1964-08-08 1968-11-28 Telefunken Patent Verfahren zur Herstellung isolierter einkristalliner Bereiche mit geringer Nebenschlusskapazitaet im Halbleiterkoerper einer mikrominiaturisierten Schaltungsanordnung auf Festkoerperbasis
US3850707A (en) * 1964-09-09 1974-11-26 Honeywell Inc Semiconductors
US3332137A (en) * 1964-09-28 1967-07-25 Rca Corp Method of isolating chips of a wafer of semiconductor material
BE670213A (fr) * 1964-09-30 1900-01-01
US3381182A (en) * 1964-10-19 1968-04-30 Philco Ford Corp Microcircuits having buried conductive layers
US3397447A (en) * 1964-10-22 1968-08-20 Dow Corning Method of making semiconductor circuits
US3385729A (en) * 1964-10-26 1968-05-28 North American Rockwell Composite dual dielectric for isolation in integrated circuits and method of making
DE1439736A1 (de) * 1964-10-30 1969-03-27 Telefunken Patent Verfahren zur Herstellung niedriger Kollektor- bzw. Diodenbahnwiderstaende in einer Festkoerperschaltung
DE1286511B (de) * 1964-12-19 1969-01-09 Telefunken Patent Verfahren zum Herstellen eines Halbleiterkoerpers mit einem niederohmigen Substrat
FR1433471A (fr) * 1965-02-16 1966-04-01 Europ Des Semicondusteurs Soc Procédé de fabrication d'un dispositif semiconducteur à effet de champ pour cirucits intégrés
US3793712A (en) * 1965-02-26 1974-02-26 Texas Instruments Inc Method of forming circuit components within a substrate
NL131898C (fr) * 1965-03-26
US3391023A (en) * 1965-03-29 1968-07-02 Fairchild Camera Instr Co Dielecteric isolation process
US3423255A (en) * 1965-03-31 1969-01-21 Westinghouse Electric Corp Semiconductor integrated circuits and method of making the same
CH439499A (fr) * 1965-04-07 1967-07-15 Centre Electron Horloger Résistance semiconductrice et procédé pour sa fabrication
US3411200A (en) * 1965-04-14 1968-11-19 Westinghouse Electric Corp Fabrication of semiconductor integrated circuits
US3421205A (en) * 1965-04-14 1969-01-14 Westinghouse Electric Corp Fabrication of structures for semiconductor integrated circuits
DE1514460A1 (de) * 1965-05-11 1969-05-22 Siemens Ag Verfahren zum Herstellen von Halbleiterschaltungen
US3457123A (en) * 1965-06-28 1969-07-22 Motorola Inc Methods for making semiconductor structures having glass insulated islands
DE1514488A1 (de) * 1965-06-29 1969-04-24 Siemens Ag Verfahren zum Herstellen einer Verbundhalbleiteranordnung
US3475664A (en) * 1965-06-30 1969-10-28 Texas Instruments Inc Ambient atmosphere isolated semiconductor devices
US3442011A (en) * 1965-06-30 1969-05-06 Texas Instruments Inc Method for isolating individual devices in an integrated circuit monolithic bar
GB1161782A (en) * 1965-08-26 1969-08-20 Associated Semiconductor Mft Improvements in Semiconductor Devices.
US3423823A (en) * 1965-10-18 1969-01-28 Hewlett Packard Co Method for making thin diaphragms
US3341743A (en) * 1965-10-21 1967-09-12 Texas Instruments Inc Integrated circuitry having discrete regions of semiconductor material isolated by an insulating material
US3443172A (en) * 1965-11-16 1969-05-06 Monsanto Co Low capacitance field effect transistor
US3453723A (en) * 1966-01-03 1969-07-08 Texas Instruments Inc Electron beam techniques in integrated circuits
US3357871A (en) * 1966-01-12 1967-12-12 Ibm Method for fabricating integrated circuits
US3404450A (en) * 1966-01-26 1968-10-08 Westinghouse Electric Corp Method of fabricating an integrated circuit structure including unipolar transistor and bipolar transistor portions
NL6617141A (fr) * 1966-02-11 1967-08-14 Siemens Ag
US3577044A (en) * 1966-03-08 1971-05-04 Ibm Integrated semiconductor devices and fabrication methods therefor
US3440498A (en) * 1966-03-14 1969-04-22 Nat Semiconductor Corp Contacts for insulation isolated semiconductor integrated circuitry
DE1283970B (de) * 1966-03-19 1968-11-28 Siemens Ag Metallischer Kontakt an einem Halbleiterbauelement
US3409809A (en) * 1966-04-06 1968-11-05 Irc Inc Semiconductor or write tri-layered metal contact
US3470318A (en) * 1966-05-11 1969-09-30 Webb James E Solid state television camera system
US3504203A (en) * 1966-05-19 1970-03-31 Sprague Electric Co Transistor with compensated depletion-layer capacitance
US3471922A (en) * 1966-06-02 1969-10-14 Raytheon Co Monolithic integrated circuitry with dielectric isolated functional regions
US3507713A (en) * 1966-07-13 1970-04-21 United Aircraft Corp Monolithic circuit chip containing noncompatible oxide-isolated regions
US3489961A (en) * 1966-09-29 1970-01-13 Fairchild Camera Instr Co Mesa etching for isolation of functional elements in integrated circuits
NL6706735A (fr) * 1967-05-13 1968-11-14
NL158024B (nl) * 1967-05-13 1978-09-15 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting verkregen door toepassing van de werkwijze.
US3489952A (en) * 1967-05-15 1970-01-13 Singer Co Encapsulated microelectronic devices
NL152707B (nl) * 1967-06-08 1977-03-15 Philips Nv Halfgeleiderinrichting bevattende een veldeffecttransistor van het type met geisoleerde poortelektrode en werkwijze ter vervaardiging daarvan.
US3531857A (en) * 1967-07-26 1970-10-06 Hitachi Ltd Method of manufacturing substrate for semiconductor integrated circuit
US3442012A (en) * 1967-08-03 1969-05-06 Teledyne Inc Method of forming a flip-chip integrated circuit
US3461357A (en) * 1967-09-15 1969-08-12 Ibm Multilevel terminal metallurgy for semiconductor devices
US3490140A (en) * 1967-10-05 1970-01-20 Bell Telephone Labor Inc Methods for making semiconductor devices
US3571919A (en) * 1968-09-25 1971-03-23 Texas Instruments Inc Semiconductor device fabrication
US3838441A (en) * 1968-12-04 1974-09-24 Texas Instruments Inc Semiconductor device isolation using silicon carbide
US3844858A (en) * 1968-12-31 1974-10-29 Texas Instruments Inc Process for controlling the thickness of a thin layer of semiconductor material and semiconductor substrate
US3657029A (en) * 1968-12-31 1972-04-18 Texas Instruments Inc Platinum thin-film metallization method
US3977071A (en) * 1969-09-29 1976-08-31 Texas Instruments Incorporated High depth-to-width ratio etching process for monocrystalline germanium semiconductor materials
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
US3791024A (en) * 1971-10-21 1974-02-12 Rca Corp Fabrication of monolithic integrated circuits
US3965568A (en) * 1973-08-27 1976-06-29 Texas Instruments Incorporated Process for fabrication and assembly of semiconductor devices
FR2252638B1 (fr) * 1973-11-23 1978-08-04 Commissariat Energie Atomique
US4238762A (en) * 1974-04-22 1980-12-09 Rockwell International Corporation Electrically isolated semiconductor devices on common crystalline substrate
JPS5131186A (fr) * 1974-09-11 1976-03-17 Hitachi Ltd
US4034187A (en) * 1974-09-18 1977-07-05 Matsushita Electric Industrial Co., Ltd. Thermal printing head
FR2335046A1 (fr) * 1975-12-12 1977-07-08 Thomson Csf Procede collectif de fabrication de dispositifs semi-conducteurs a jonction et dispositifs obtenus par ce procede
CA1186808A (fr) * 1981-11-06 1985-05-07 Sidney I. Soclof Methode de fabrication de dispositifs cmos isoles par dielectrique avec fente isolee
DE3534418A1 (de) * 1985-09-27 1987-04-02 Telefunken Electronic Gmbh Verfahren zum herstellen von vertiefungen in einem halbleiterbauelemente enthaltenden halbleiterkoerper
US4704186A (en) * 1986-02-19 1987-11-03 Rca Corporation Recessed oxide method for making a silicon-on-insulator substrate
US5642562A (en) * 1994-03-02 1997-07-01 Micron Communications, Inc. Method of forming button-type battery lithium electrodes with housing member
US5480462A (en) * 1994-03-02 1996-01-02 Micron Communications, Inc. Method of forming button-type battery lithium electrodes
US5727901A (en) * 1996-01-18 1998-03-17 Rennie; David G. Collection tank
US5547781A (en) * 1994-03-02 1996-08-20 Micron Communications, Inc. Button-type battery with improved separator and gasket construction
US5494495A (en) * 1994-10-11 1996-02-27 Micron Communications, Inc. Method of forming button-type batteries
ATE556442T1 (de) * 1994-12-01 2012-05-15 Round Rock Res Llc Verfahren zur herstellung von knopfförmigen batterien und knopfförmige batterieisolierung und dichtung
US6310385B1 (en) * 1997-01-16 2001-10-30 International Rectifier Corp. High band gap layer to isolate wells in high voltage power integrated circuits
US6008102A (en) * 1998-04-09 1999-12-28 Motorola, Inc. Method of forming a three-dimensional integrated inductor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2958120A (en) * 1956-05-01 1960-11-01 Ibm Method of flush circuit manufacture
US3217209A (en) * 1960-05-12 1965-11-09 Xerox Corp Printed circuits with resistive and capacitive elements

Also Published As

Publication number Publication date
CA938384A (en) 1973-12-11
NL6409176A (fr) 1965-02-22
US3290753A (en) 1966-12-13
GB1070278A (en) 1967-06-01

Similar Documents

Publication Publication Date Title
BE651287A (fr) Procede de fabrication d'elements de circuit integre a semi-conducteurs
FR1418731A (fr) Procédé de fabrication de circuits imprimés
FR1512329A (fr) Procédé de fabrication d'articles photo-sensibles
FR1442703A (fr) Structures semiconductrices pour circuits intégrés et procédé de fabrication correspondant
FR1507802A (fr) Procédé de fabrication de circuits intégrés
BE789174A (fr) Procede de fabrication de circuits
FR1428353A (fr) Procédé de fabrication de circuits ou d'éléments de circuits micro-miniaturisés
FR1420044A (fr) Procédé de fabrication des circuits imprimés
FR1509644A (fr) Procédé de fabrication d'un circuit intégré
FR1448383A (fr) Procédé de fabrication d'éléments semi-conducteurs
FR1405168A (fr) Procédé de fabrication de semi-conducteurs
BE766651A (fr) Procede pour la fabrication de dispositifs semiconducteurs a circuits integres
FR1535920A (fr) Procédé de fabrication de circuits intégrés
FR1379027A (fr) Procédé de fabrication d'oléfines
FR2060339A1 (fr) Procede de fabrication d'elements semi-conducteurs
FR1430131A (fr) Procédé de fabrication d'hydroquinone
FR1481283A (fr) Procédé de fabrication de circuits semiconducteurs intégrés
FR1416805A (fr) Procédé de fabrication de circuits intégrés
FR1483890A (fr) Procédé de fabrication de circuits à semi-conducteurs
FR1474311A (fr) Procédé de fabrication de circuits intégrés
FR1505332A (fr) Procédé de fabrication d'époxydes
FR1469961A (fr) Procédés de fabrication de circuits intégrés
FR1404193A (fr) Procédé de fabrication d'éléments de circuit intégré à semi-conducteurs
FR1422157A (fr) Mode de fabrication de semi-conducteurs de circuits intégrés
FR1473535A (fr) Procédé de fabrication de circuits intégrés à semi-conducteurs