BE651287A - PROCESS FOR THE MANUFACTURING OF SEMICONDUCTOR INTEGRATED CIRCUIT ELEMENTS - Google Patents

PROCESS FOR THE MANUFACTURING OF SEMICONDUCTOR INTEGRATED CIRCUIT ELEMENTS

Info

Publication number
BE651287A
BE651287A BE651287DA BE651287A BE 651287 A BE651287 A BE 651287A BE 651287D A BE651287D A BE 651287DA BE 651287 A BE651287 A BE 651287A
Authority
BE
Belgium
Prior art keywords
manufacturing
integrated circuit
semiconductor integrated
circuit elements
elements
Prior art date
Application number
Other languages
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE651287A publication Critical patent/BE651287A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/945—Special, e.g. metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12389—All metal or with adjacent metals having variation in thickness
    • Y10T428/12396—Discontinuous surface component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12486—Laterally noncoextensive components [e.g., embedded, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12583—Component contains compound of adjacent metal
    • Y10T428/1259—Oxide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12674—Ge- or Si-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12736—Al-base component
    • Y10T428/1275—Next to Group VIII or IB metal-base component

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
BE651287D 1963-08-19 1964-07-31 PROCESS FOR THE MANUFACTURING OF SEMICONDUCTOR INTEGRATED CIRCUIT ELEMENTS BE651287A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US302966A US3290753A (en) 1963-08-19 1963-08-19 Method of making semiconductor integrated circuit elements

Publications (1)

Publication Number Publication Date
BE651287A true BE651287A (en) 1964-11-16

Family

ID=23170010

Family Applications (1)

Application Number Title Priority Date Filing Date
BE651287D BE651287A (en) 1963-08-19 1964-07-31 PROCESS FOR THE MANUFACTURING OF SEMICONDUCTOR INTEGRATED CIRCUIT ELEMENTS

Country Status (5)

Country Link
US (1) US3290753A (en)
BE (1) BE651287A (en)
CA (1) CA938384A (en)
GB (1) GB1070278A (en)
NL (1) NL6409176A (en)

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DE1439712A1 (en) * 1964-08-08 1968-11-28 Telefunken Patent Process for the production of isolated monocrystalline areas with low shunt capacitance in the semiconductor body of a microminiaturized circuit arrangement based on solid bodies
US3850707A (en) * 1964-09-09 1974-11-26 Honeywell Inc Semiconductors
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US3381182A (en) * 1964-10-19 1968-04-30 Philco Ford Corp Microcircuits having buried conductive layers
US3397447A (en) * 1964-10-22 1968-08-20 Dow Corning Method of making semiconductor circuits
US3385729A (en) * 1964-10-26 1968-05-28 North American Rockwell Composite dual dielectric for isolation in integrated circuits and method of making
DE1439736A1 (en) * 1964-10-30 1969-03-27 Telefunken Patent Process for the production of low collector or diode path resistances in a solid-state circuit
DE1286511B (en) * 1964-12-19 1969-01-09 Telefunken Patent Method for producing a semiconductor body with a low-resistance substrate
FR1433471A (en) * 1965-02-16 1966-04-01 Europ Des Semicondusteurs Soc Method of manufacturing a semiconductor field effect device for integrated circuits
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DE1514460A1 (en) * 1965-05-11 1969-05-22 Siemens Ag Method for manufacturing semiconductor circuits
US3457123A (en) * 1965-06-28 1969-07-22 Motorola Inc Methods for making semiconductor structures having glass insulated islands
DE1514488A1 (en) * 1965-06-29 1969-04-24 Siemens Ag Method for manufacturing a compound semiconductor device
US3475664A (en) * 1965-06-30 1969-10-28 Texas Instruments Inc Ambient atmosphere isolated semiconductor devices
US3442011A (en) * 1965-06-30 1969-05-06 Texas Instruments Inc Method for isolating individual devices in an integrated circuit monolithic bar
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US3423823A (en) * 1965-10-18 1969-01-28 Hewlett Packard Co Method for making thin diaphragms
US3341743A (en) * 1965-10-21 1967-09-12 Texas Instruments Inc Integrated circuitry having discrete regions of semiconductor material isolated by an insulating material
US3443172A (en) * 1965-11-16 1969-05-06 Monsanto Co Low capacitance field effect transistor
US3453723A (en) * 1966-01-03 1969-07-08 Texas Instruments Inc Electron beam techniques in integrated circuits
US3357871A (en) * 1966-01-12 1967-12-12 Ibm Method for fabricating integrated circuits
US3404450A (en) * 1966-01-26 1968-10-08 Westinghouse Electric Corp Method of fabricating an integrated circuit structure including unipolar transistor and bipolar transistor portions
NL6617141A (en) * 1966-02-11 1967-08-14 Siemens Ag
US3577044A (en) * 1966-03-08 1971-05-04 Ibm Integrated semiconductor devices and fabrication methods therefor
US3440498A (en) * 1966-03-14 1969-04-22 Nat Semiconductor Corp Contacts for insulation isolated semiconductor integrated circuitry
DE1283970B (en) * 1966-03-19 1968-11-28 Siemens Ag Metallic contact on a semiconductor component
US3409809A (en) * 1966-04-06 1968-11-05 Irc Inc Semiconductor or write tri-layered metal contact
US3470318A (en) * 1966-05-11 1969-09-30 Webb James E Solid state television camera system
US3504203A (en) * 1966-05-19 1970-03-31 Sprague Electric Co Transistor with compensated depletion-layer capacitance
US3471922A (en) * 1966-06-02 1969-10-14 Raytheon Co Monolithic integrated circuitry with dielectric isolated functional regions
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US3489952A (en) * 1967-05-15 1970-01-13 Singer Co Encapsulated microelectronic devices
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US3531857A (en) * 1967-07-26 1970-10-06 Hitachi Ltd Method of manufacturing substrate for semiconductor integrated circuit
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US5547781A (en) * 1994-03-02 1996-08-20 Micron Communications, Inc. Button-type battery with improved separator and gasket construction
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Also Published As

Publication number Publication date
NL6409176A (en) 1965-02-22
GB1070278A (en) 1967-06-01
CA938384A (en) 1973-12-11
US3290753A (en) 1966-12-13

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