FR1469961A - Procédés de fabrication de circuits intégrés - Google Patents

Procédés de fabrication de circuits intégrés

Info

Publication number
FR1469961A
FR1469961A FR50878A FR50878A FR1469961A FR 1469961 A FR1469961 A FR 1469961A FR 50878 A FR50878 A FR 50878A FR 50878 A FR50878 A FR 50878A FR 1469961 A FR1469961 A FR 1469961A
Authority
FR
France
Prior art keywords
integrated circuit
manufacturing processes
circuit manufacturing
processes
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR50878A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Priority to FR50878A priority Critical patent/FR1469961A/fr
Application granted granted Critical
Publication of FR1469961A publication Critical patent/FR1469961A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02381Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/02428Structure
    • H01L21/0243Surface structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02636Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639Preparation of substrate for selective deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
FR50878A 1965-02-26 1966-02-24 Procédés de fabrication de circuits intégrés Expired FR1469961A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR50878A FR1469961A (fr) 1965-02-26 1966-02-24 Procédés de fabrication de circuits intégrés

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US43563365A 1965-02-26 1965-02-26
FR50878A FR1469961A (fr) 1965-02-26 1966-02-24 Procédés de fabrication de circuits intégrés

Publications (1)

Publication Number Publication Date
FR1469961A true FR1469961A (fr) 1967-02-17

Family

ID=26168793

Family Applications (1)

Application Number Title Priority Date Filing Date
FR50878A Expired FR1469961A (fr) 1965-02-26 1966-02-24 Procédés de fabrication de circuits intégrés

Country Status (1)

Country Link
FR (1) FR1469961A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2028462A1 (fr) * 1969-01-16 1970-10-09 Signetics Corp
EP0311309A2 (fr) * 1987-10-09 1989-04-12 AT&T Corp. Procédé de fabrication de dispositifs semi-conducteurs comportant des régions diélectriquement isolées

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2028462A1 (fr) * 1969-01-16 1970-10-09 Signetics Corp
EP0311309A2 (fr) * 1987-10-09 1989-04-12 AT&T Corp. Procédé de fabrication de dispositifs semi-conducteurs comportant des régions diélectriquement isolées
EP0311309A3 (fr) * 1987-10-09 1991-02-06 AT&T Corp. Procédé de fabrication de dispositifs semi-conducteurs comportant des régions diélectriquement isolées

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