JPS554918A - Passivation film structure and manufacturing method thereof - Google Patents

Passivation film structure and manufacturing method thereof

Info

Publication number
JPS554918A
JPS554918A JP7647378A JP7647378A JPS554918A JP S554918 A JPS554918 A JP S554918A JP 7647378 A JP7647378 A JP 7647378A JP 7647378 A JP7647378 A JP 7647378A JP S554918 A JPS554918 A JP S554918A
Authority
JP
Japan
Prior art keywords
film
rate
si3h4
content
becomes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7647378A
Other languages
Japanese (ja)
Inventor
Miyoko Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7647378A priority Critical patent/JPS554918A/en
Publication of JPS554918A publication Critical patent/JPS554918A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To obtain a protective film of good quality by preparing a 2-layer film of Si3N4 by plasma aerial phase reaction so that light reflexibility of the lower layer becomes lower than that of the top (or upper) layer. CONSTITUTION:Plasma aerial phase reaction is process in such a manner as to apply relatively high temperature and high power at first and then relatively high temperature but low power. Flow rates of SiH4 and NH3 are set so that Si-N ratio r becomes approximately 0.75 at first and then 0.82 - 0.83, and flow rate of Si3H4 is set to a low value. If percentage of Si content in extraction film becomes higher due to increase in Si3H4 flow rate, stability relative to polarization phenomena becomes deteriorated, and therefore, particular care must be taken so as to prevent the lower layer film from getting higher Si content. Further, Si3N4 takes lower electric conductivity toward smaller light reflection rate, and therefore, n must be controlled to a smaller value. By controlling the film's H content, Si-N ratio and reflection rate of the extraction film by adjusting high frequency power, gas flow rate and temperature, etc., and by piling Si3H4 films of low reflection rate and high refrection rate one after another in this order by aerial phase plasma, it is possible to obtain a crack-free and defect-free protective film.
JP7647378A 1978-06-26 1978-06-26 Passivation film structure and manufacturing method thereof Pending JPS554918A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7647378A JPS554918A (en) 1978-06-26 1978-06-26 Passivation film structure and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7647378A JPS554918A (en) 1978-06-26 1978-06-26 Passivation film structure and manufacturing method thereof

Publications (1)

Publication Number Publication Date
JPS554918A true JPS554918A (en) 1980-01-14

Family

ID=13606139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7647378A Pending JPS554918A (en) 1978-06-26 1978-06-26 Passivation film structure and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JPS554918A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5735327A (en) * 1980-08-13 1982-02-25 Hitachi Ltd Semiconductor device
JPS5750450A (en) * 1980-09-11 1982-03-24 Fujitsu Ltd Semiconductor device
JPS61159576A (en) * 1984-12-21 1986-07-19 アドバンスト・マイクロ・ディバイシズ・インコーポレーテッド Formation of silicon nitride film transparent to ultravioletrays
JPS6298625A (en) * 1985-10-24 1987-05-08 Nec Corp Semiconductor device
JPS62174927A (en) * 1986-01-28 1987-07-31 Nec Corp Semiconductor device
EP0601093A1 (en) * 1991-08-28 1994-06-15 Advanced Power Technology Inc. Igbt process and device with platinum lifetime control
WO2007142239A1 (en) * 2006-06-08 2007-12-13 Nec Corporation Semiconductor device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5735327A (en) * 1980-08-13 1982-02-25 Hitachi Ltd Semiconductor device
JPS6322059B2 (en) * 1980-08-13 1988-05-10 Hitachi Ltd
JPS5750450A (en) * 1980-09-11 1982-03-24 Fujitsu Ltd Semiconductor device
JPS61159576A (en) * 1984-12-21 1986-07-19 アドバンスト・マイクロ・ディバイシズ・インコーポレーテッド Formation of silicon nitride film transparent to ultravioletrays
JPS6298625A (en) * 1985-10-24 1987-05-08 Nec Corp Semiconductor device
JPS62174927A (en) * 1986-01-28 1987-07-31 Nec Corp Semiconductor device
EP0601093A1 (en) * 1991-08-28 1994-06-15 Advanced Power Technology Inc. Igbt process and device with platinum lifetime control
EP0601093A4 (en) * 1991-08-28 1995-04-12 Advanced Power Technology Igbt process and device with platinum lifetime control.
EP1182706A2 (en) * 1991-08-28 2002-02-27 Advanced Power Technology Inc. IGBT process and device
EP1182706A3 (en) * 1991-08-28 2003-10-08 Advanced Power Technology Inc. IGBT process and device
WO2007142239A1 (en) * 2006-06-08 2007-12-13 Nec Corporation Semiconductor device
US9577095B2 (en) 2006-06-08 2017-02-21 Renesas Electronics Corporation Semiconductor device

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