US4857476A - Bipolar transistor process using sidewall spacer for aligning base insert - Google Patents
Bipolar transistor process using sidewall spacer for aligning base insert Download PDFInfo
- Publication number
- US4857476A US4857476A US07/148,419 US14841988A US4857476A US 4857476 A US4857476 A US 4857476A US 14841988 A US14841988 A US 14841988A US 4857476 A US4857476 A US 4857476A
- Authority
- US
- United States
- Prior art keywords
- base
- emitter
- collector
- insert
- bipolar transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 125000006850 spacer group Chemical group 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 19
- 230000008569 process Effects 0.000 title description 13
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 34
- 239000002019 doping agent Substances 0.000 claims description 18
- 239000000377 silicon dioxide Substances 0.000 claims description 17
- 235000012239 silicon dioxide Nutrition 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- 238000002955 isolation Methods 0.000 abstract description 29
- 238000009792 diffusion process Methods 0.000 abstract description 13
- 239000007943 implant Substances 0.000 abstract description 5
- 238000000926 separation method Methods 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 description 24
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 22
- 150000004767 nitrides Chemical class 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 10
- 229910052785 arsenic Inorganic materials 0.000 description 8
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910021341 titanium silicide Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 150000001638 boron Chemical class 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/01—Bipolar transistors-ion implantation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/011—Bipolar transistors
Abstract
Description
Claims (4)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/148,419 US4857476A (en) | 1988-01-26 | 1988-01-26 | Bipolar transistor process using sidewall spacer for aligning base insert |
EP89300713A EP0326362B1 (en) | 1988-01-26 | 1989-01-25 | Bipolar transistor process using sidewall spacer for aligning base insert |
DE89300713T DE68909624T2 (en) | 1988-01-26 | 1989-01-25 | Method of fabricating a bipolar transistor using sidewall spacers to align the embedded base. |
JP1017418A JPH025433A (en) | 1988-01-26 | 1989-01-26 | Manufacture of bipolar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/148,419 US4857476A (en) | 1988-01-26 | 1988-01-26 | Bipolar transistor process using sidewall spacer for aligning base insert |
Publications (1)
Publication Number | Publication Date |
---|---|
US4857476A true US4857476A (en) | 1989-08-15 |
Family
ID=22525683
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US07/148,419 Expired - Fee Related US4857476A (en) | 1988-01-26 | 1988-01-26 | Bipolar transistor process using sidewall spacer for aligning base insert |
Country Status (4)
Country | Link |
---|---|
US (1) | US4857476A (en) |
EP (1) | EP0326362B1 (en) |
JP (1) | JPH025433A (en) |
DE (1) | DE68909624T2 (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5139961A (en) * | 1990-04-02 | 1992-08-18 | National Semiconductor Corporation | Reducing base resistance of a bjt by forming a self aligned silicide in the single crystal region of the extrinsic base |
US5262336A (en) * | 1986-03-21 | 1993-11-16 | Advanced Power Technology, Inc. | IGBT process to produce platinum lifetime control |
US5268314A (en) * | 1990-01-16 | 1993-12-07 | Philips Electronics North America Corp. | Method of forming a self-aligned bipolar transistor |
US5374566A (en) * | 1993-01-27 | 1994-12-20 | National Semiconductor Corporation | Method of fabricating a BiCMOS structure |
US5391503A (en) * | 1991-05-13 | 1995-02-21 | Sony Corporation | Method of forming a stacked semiconductor device wherein semiconductor layers and insulating films are sequentially stacked and forming openings through such films and etchings using one of the insulating films as a mask |
US6033231A (en) * | 1996-02-29 | 2000-03-07 | Motorola, Inc. | Semiconductor device having a pedestal and method of forming |
US6465873B1 (en) | 1997-08-21 | 2002-10-15 | Micron Technology, Inc. | Semiconductor gettering structures |
US6492508B1 (en) | 1996-06-03 | 2002-12-10 | United States Surgical Corp. A Division Of Tyco Healthcare Group | Nucleic acids encoding extracellular matrix proteins |
US6552324B1 (en) | 1998-12-18 | 2003-04-22 | Xerox Corporation | Selectable pixel amplifier for use in a photosensor array |
US6654058B1 (en) | 1999-09-03 | 2003-11-25 | Xerox Corporation | Resettable pixel amplifier for use in a photosensor array |
US20060178506A1 (en) * | 1996-06-03 | 2006-08-10 | Gruskin Elliott A | Amino acid modified polypeptides |
US10714601B2 (en) | 2017-08-07 | 2020-07-14 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Fabrication of a transistor with a channel structure and semimetal source and drain regions |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4398962A (en) * | 1980-09-26 | 1983-08-16 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of controlling base contact regions by forming a blocking layer contiguous to a doped poly-si emitter source |
US4418469A (en) * | 1979-04-12 | 1983-12-06 | Matsushita Electric Industrial Co., Ltd. | Method of simultaneously forming buried resistors and bipolar transistors by ion implantation |
US4662062A (en) * | 1984-02-20 | 1987-05-05 | Matsushita Electronics Corporation | Method for making bipolar transistor having a graft-base configuration |
US4682409A (en) * | 1985-06-21 | 1987-07-28 | Advanced Micro Devices, Inc. | Fast bipolar transistor for integrated circuit structure and method for forming same |
US4705599A (en) * | 1985-08-28 | 1987-11-10 | Mitsubishi Denki Kabushiki Kaisha | Method for fabricating bipolar transistor in integrated circuit |
US4745080A (en) * | 1985-03-23 | 1988-05-17 | Stc, Plc | Method of making a self-aligned bipolar transistor with composite masking |
US4749661A (en) * | 1984-02-03 | 1988-06-07 | Advanced Micro Devices, Inc. | Vertical slot bottom bipolar transistor structure |
US4778774A (en) * | 1986-03-22 | 1988-10-18 | Deutsche Itt Industries Gmbh | Process for manufacturing a monolithic integrated circuit comprising at least one bipolar planar transistor |
US4784971A (en) * | 1986-04-23 | 1988-11-15 | American Telephone And Telegraph Company, At&T Bell Laboratories | Process for manufacturing semiconductor BICMOS device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3115029A1 (en) * | 1981-04-14 | 1982-11-04 | Deutsche Itt Industries Gmbh, 7800 Freiburg | "METHOD FOR PRODUCING AN INTEGRATED BIPOLAR PLANAR TRANSISTOR" |
EP0122004A3 (en) * | 1983-03-08 | 1986-12-17 | Trw Inc. | Improved bipolar transistor construction |
DE3334774A1 (en) * | 1983-09-26 | 1985-04-11 | Siemens AG, 1000 Berlin und 8000 München | INTEGRATABLE NPN TRANSISTOR |
GB2175136B (en) * | 1985-04-10 | 1988-10-05 | Mitsubishi Electric Corp | Semiconductor manufacturing method |
-
1988
- 1988-01-26 US US07/148,419 patent/US4857476A/en not_active Expired - Fee Related
-
1989
- 1989-01-25 DE DE89300713T patent/DE68909624T2/en not_active Expired - Fee Related
- 1989-01-25 EP EP89300713A patent/EP0326362B1/en not_active Expired - Lifetime
- 1989-01-26 JP JP1017418A patent/JPH025433A/en active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4418469A (en) * | 1979-04-12 | 1983-12-06 | Matsushita Electric Industrial Co., Ltd. | Method of simultaneously forming buried resistors and bipolar transistors by ion implantation |
US4398962A (en) * | 1980-09-26 | 1983-08-16 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of controlling base contact regions by forming a blocking layer contiguous to a doped poly-si emitter source |
US4749661A (en) * | 1984-02-03 | 1988-06-07 | Advanced Micro Devices, Inc. | Vertical slot bottom bipolar transistor structure |
US4662062A (en) * | 1984-02-20 | 1987-05-05 | Matsushita Electronics Corporation | Method for making bipolar transistor having a graft-base configuration |
US4745080A (en) * | 1985-03-23 | 1988-05-17 | Stc, Plc | Method of making a self-aligned bipolar transistor with composite masking |
US4682409A (en) * | 1985-06-21 | 1987-07-28 | Advanced Micro Devices, Inc. | Fast bipolar transistor for integrated circuit structure and method for forming same |
US4705599A (en) * | 1985-08-28 | 1987-11-10 | Mitsubishi Denki Kabushiki Kaisha | Method for fabricating bipolar transistor in integrated circuit |
US4778774A (en) * | 1986-03-22 | 1988-10-18 | Deutsche Itt Industries Gmbh | Process for manufacturing a monolithic integrated circuit comprising at least one bipolar planar transistor |
US4784971A (en) * | 1986-04-23 | 1988-11-15 | American Telephone And Telegraph Company, At&T Bell Laboratories | Process for manufacturing semiconductor BICMOS device |
Non-Patent Citations (2)
Title |
---|
Dockerty, R., IBM TDB vol. 25, No. 11B, Apr. 1983, pp. 6150 6151. * |
Dockerty, R., IBM TDB vol. 25, No. 11B, Apr. 1983, pp. 6150-6151. |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5262336A (en) * | 1986-03-21 | 1993-11-16 | Advanced Power Technology, Inc. | IGBT process to produce platinum lifetime control |
US5268314A (en) * | 1990-01-16 | 1993-12-07 | Philips Electronics North America Corp. | Method of forming a self-aligned bipolar transistor |
US5139961A (en) * | 1990-04-02 | 1992-08-18 | National Semiconductor Corporation | Reducing base resistance of a bjt by forming a self aligned silicide in the single crystal region of the extrinsic base |
US5391503A (en) * | 1991-05-13 | 1995-02-21 | Sony Corporation | Method of forming a stacked semiconductor device wherein semiconductor layers and insulating films are sequentially stacked and forming openings through such films and etchings using one of the insulating films as a mask |
US5374566A (en) * | 1993-01-27 | 1994-12-20 | National Semiconductor Corporation | Method of fabricating a BiCMOS structure |
US6033231A (en) * | 1996-02-29 | 2000-03-07 | Motorola, Inc. | Semiconductor device having a pedestal and method of forming |
US6492508B1 (en) | 1996-06-03 | 2002-12-10 | United States Surgical Corp. A Division Of Tyco Healthcare Group | Nucleic acids encoding extracellular matrix proteins |
US20040086961A1 (en) * | 1996-06-03 | 2004-05-06 | United States Surgical Corporation | Amino acid modified polypeptides |
US20050196830A1 (en) * | 1996-06-03 | 2005-09-08 | Gruskin Elliott A. | Amino acid modified polypeptides |
US6958223B2 (en) | 1996-06-03 | 2005-10-25 | United States Surgical Corporation | Methods for producing extracellular matrix proteins |
US20060178506A1 (en) * | 1996-06-03 | 2006-08-10 | Gruskin Elliott A | Amino acid modified polypeptides |
US6479875B1 (en) * | 1997-08-21 | 2002-11-12 | Micron Technology, Inc. | Fabrication of semiconductor gettering structures by ion implantation |
US6465873B1 (en) | 1997-08-21 | 2002-10-15 | Micron Technology, Inc. | Semiconductor gettering structures |
US6509248B1 (en) | 1997-08-21 | 2003-01-21 | Micron Technology, Inc. | Fabrication of semiconductor gettering structures by ion implantation |
US6552324B1 (en) | 1998-12-18 | 2003-04-22 | Xerox Corporation | Selectable pixel amplifier for use in a photosensor array |
US6654058B1 (en) | 1999-09-03 | 2003-11-25 | Xerox Corporation | Resettable pixel amplifier for use in a photosensor array |
US10714601B2 (en) | 2017-08-07 | 2020-07-14 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Fabrication of a transistor with a channel structure and semimetal source and drain regions |
Also Published As
Publication number | Publication date |
---|---|
EP0326362B1 (en) | 1993-10-06 |
JPH025433A (en) | 1990-01-10 |
EP0326362A3 (en) | 1990-04-11 |
DE68909624T2 (en) | 1994-04-21 |
DE68909624D1 (en) | 1993-11-11 |
EP0326362A2 (en) | 1989-08-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: HEWLETT-PACKARD COMPANY, 3000 HANOVER STREET, PALO Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:COLINGE, JEAN-PIERRRE;REEL/FRAME:004859/0506 Effective date: 19880122 Owner name: HEWLETT-PACKARD COMPANY, A CA CORP., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:COLINGE, JEAN-PIERRRE;REEL/FRAME:004859/0506 Effective date: 19880122 |
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Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
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FPAY | Fee payment |
Year of fee payment: 4 |
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FPAY | Fee payment |
Year of fee payment: 8 |
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AS | Assignment |
Owner name: HEWLETT-PACKARD COMPANY, A DELAWARE CORPORATION, C Free format text: MERGER;ASSIGNOR:HEWLETT-PACKARD COMPANY, A CALIFORNIA CORPORATION;REEL/FRAME:010841/0649 Effective date: 19980520 |
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AS | Assignment |
Owner name: AGILENT TECHNOLOGIES INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HEWLETT-PACKARD COMPANY, A DELAWARE CORPORATION;REEL/FRAME:010901/0336 Effective date: 20000520 |
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REMI | Maintenance fee reminder mailed | ||
LAPS | Lapse for failure to pay maintenance fees | ||
FP | Lapsed due to failure to pay maintenance fee |
Effective date: 20010815 |
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AS | Assignment |
Owner name: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:AGILENT TECHNOLOGIES, INC.;REEL/FRAME:018367/0245 Effective date: 20051201 |
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STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |