DE69230281T2 - Nichtflüchtiges Halbleiterspeichergerät mit Redundanz - Google Patents
Nichtflüchtiges Halbleiterspeichergerät mit RedundanzInfo
- Publication number
- DE69230281T2 DE69230281T2 DE69230281T DE69230281T DE69230281T2 DE 69230281 T2 DE69230281 T2 DE 69230281T2 DE 69230281 T DE69230281 T DE 69230281T DE 69230281 T DE69230281 T DE 69230281T DE 69230281 T2 DE69230281 T2 DE 69230281T2
- Authority
- DE
- Germany
- Prior art keywords
- memory cell
- data
- volatile
- sector
- redundant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 101150118928 MXR1 gene Proteins 0.000 claims abstract description 25
- 230000002950 deficient Effects 0.000 claims abstract description 20
- 239000011159 matrix material Substances 0.000 claims abstract description 19
- 101100459241 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) MXR2 gene Proteins 0.000 claims abstract description 17
- 102100022122 Ras-related C3 botulinum toxin substrate 1 Human genes 0.000 claims description 21
- 108010062302 rac1 GTP Binding Protein Proteins 0.000 claims description 21
- 101000974356 Homo sapiens Nuclear receptor coactivator 3 Proteins 0.000 claims description 15
- 101000712576 Homo sapiens Ras-related C3 botulinum toxin substrate 3 Proteins 0.000 claims description 15
- 102100033481 Ras-related C3 botulinum toxin substrate 3 Human genes 0.000 claims description 15
- 101001110283 Canis lupus familiaris Ras-related C3 botulinum toxin substrate 1 Proteins 0.000 claims description 7
- 101001110313 Homo sapiens Ras-related C3 botulinum toxin substrate 2 Proteins 0.000 claims description 7
- 102100022129 Ras-related C3 botulinum toxin substrate 2 Human genes 0.000 claims description 7
- 239000000872 buffer Substances 0.000 claims description 2
- 238000003491 array Methods 0.000 description 33
- 238000010586 diagram Methods 0.000 description 8
- 101000629937 Homo sapiens Translocon-associated protein subunit alpha Proteins 0.000 description 6
- 102100026231 Translocon-associated protein subunit alpha Human genes 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 101001084860 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) 40S ribosomal protein S15 Proteins 0.000 description 4
- 101100365087 Arabidopsis thaliana SCRA gene Proteins 0.000 description 3
- 101000668165 Homo sapiens RNA-binding motif, single-stranded-interacting protein 1 Proteins 0.000 description 3
- 101000629913 Homo sapiens Translocon-associated protein subunit beta Proteins 0.000 description 3
- 102100039692 RNA-binding motif, single-stranded-interacting protein 1 Human genes 0.000 description 3
- 101150105073 SCR1 gene Proteins 0.000 description 3
- 101100134054 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) NTG1 gene Proteins 0.000 description 3
- 102100026229 Translocon-associated protein subunit beta Human genes 0.000 description 3
- 101000693970 Homo sapiens Scavenger receptor class A member 3 Proteins 0.000 description 2
- 102100027192 Scavenger receptor class A member 3 Human genes 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 101150084419 CSR2 gene Proteins 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3359812A JP2738195B2 (ja) | 1991-12-27 | 1991-12-27 | 不揮発性半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69230281D1 DE69230281D1 (de) | 1999-12-16 |
| DE69230281T2 true DE69230281T2 (de) | 2000-07-13 |
Family
ID=18466420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69230281T Expired - Fee Related DE69230281T2 (de) | 1991-12-27 | 1992-12-09 | Nichtflüchtiges Halbleiterspeichergerät mit Redundanz |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5329488A (cg-RX-API-DMAC7.html) |
| EP (1) | EP0549193B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2738195B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR950014802B1 (cg-RX-API-DMAC7.html) |
| DE (1) | DE69230281T2 (cg-RX-API-DMAC7.html) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR950013342B1 (ko) * | 1992-10-06 | 1995-11-02 | 삼성전자주식회사 | 반도체 메모리장치의 결함구제회로 |
| US5359570A (en) * | 1992-11-13 | 1994-10-25 | Silicon Storage Technology, Inc. | Solid state peripheral storage device |
| US5349558A (en) * | 1993-08-26 | 1994-09-20 | Advanced Micro Devices, Inc. | Sector-based redundancy architecture |
| US5442586A (en) * | 1993-09-10 | 1995-08-15 | Intel Corporation | Method and apparatus for controlling the output current provided by a charge pump circuit |
| EP0686978B1 (en) * | 1994-06-07 | 2001-03-07 | STMicroelectronics S.r.l. | A method for in-factory testing of flash EEPROM devices |
| US5517138A (en) * | 1994-09-30 | 1996-05-14 | Intel Corporation | Dual row selection using multiplexed tri-level decoder |
| US5559742A (en) * | 1995-02-23 | 1996-09-24 | Micron Technology, Inc. | Flash memory having transistor redundancy |
| JPH08293197A (ja) * | 1995-04-21 | 1996-11-05 | Nec Corp | 不揮発性半導体記憶装置 |
| KR100217910B1 (ko) * | 1995-08-17 | 1999-09-01 | 김영환 | 플래쉬 메모리셀의 리페어 회로 및 리페어 방법 |
| US5576985A (en) * | 1996-03-25 | 1996-11-19 | Holtz; Klaus | Integrated content addressable read only memory |
| US5896393A (en) * | 1996-05-23 | 1999-04-20 | Advanced Micro Devices, Inc. | Simplified file management scheme for flash memory |
| US5828599A (en) * | 1996-08-06 | 1998-10-27 | Simtek Corporation | Memory with electrically erasable and programmable redundancy |
| US5996106A (en) | 1997-02-04 | 1999-11-30 | Micron Technology, Inc. | Multi bank test mode for memory devices |
| US5913928A (en) * | 1997-05-09 | 1999-06-22 | Micron Technology, Inc. | Data compression test mode independent of redundancy |
| KR100280451B1 (ko) * | 1998-03-12 | 2001-02-01 | 김영환 | 메모리 셀의 동작이 섹터 단위로 수행되는 플래쉬 메모리 |
| TW446876B (en) * | 1998-08-27 | 2001-07-21 | Sanyo Electric Co | Non-volatile semiconductor memory |
| US6026021A (en) * | 1998-09-10 | 2000-02-15 | Winbond Electronics Corp. America | Semiconductor memory array partitioned into memory blocks and sub-blocks and method of addressing |
| JP2002063797A (ja) * | 2000-08-22 | 2002-02-28 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
| US7162668B2 (en) | 2001-04-19 | 2007-01-09 | Micron Technology, Inc. | Memory with element redundancy |
| US6865702B2 (en) | 2001-04-09 | 2005-03-08 | Micron Technology, Inc. | Synchronous flash memory with test code input |
| US7640465B2 (en) * | 2001-04-19 | 2009-12-29 | Micron Technology, Inc. | Memory with element redundancy |
| KR100504114B1 (ko) * | 2002-08-23 | 2005-07-27 | 삼성전자주식회사 | 불량 셀 구제 기능을 갖는 롬 메모리 장치 및 불량 셀구제 방법 |
| JP2004110870A (ja) * | 2002-09-13 | 2004-04-08 | Fujitsu Ltd | 半導体記憶装置 |
| KR100578141B1 (ko) | 2004-11-22 | 2006-05-10 | 삼성전자주식회사 | 읽기 속도를 향상시킬 수 있는 낸드 플래시 메모리 장치 |
| JP4727273B2 (ja) * | 2005-03-31 | 2011-07-20 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
| US8072834B2 (en) | 2005-08-25 | 2011-12-06 | Cypress Semiconductor Corporation | Line driver circuit and method with standby mode of operation |
| JP2008097696A (ja) * | 2006-10-11 | 2008-04-24 | Elpida Memory Inc | 半導体装置 |
| US7958390B2 (en) * | 2007-05-15 | 2011-06-07 | Sandisk Corporation | Memory device for repairing a neighborhood of rows in a memory array using a patch table |
| US7966518B2 (en) * | 2007-05-15 | 2011-06-21 | Sandisk Corporation | Method for repairing a neighborhood of rows in a memory array using a patch table |
| TW201019333A (en) * | 2008-11-12 | 2010-05-16 | Skymedi Corp | Defect processing method for multi-channel flash memory storage device |
| US9082057B2 (en) * | 2009-08-19 | 2015-07-14 | Intelleflex Corporation | RF device with tamper detection |
| US10062440B1 (en) * | 2017-06-20 | 2018-08-28 | Winbond Electronics Corp. | Non-volatile semiconductor memory device and reading method thereof |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5928560Y2 (ja) * | 1979-11-13 | 1984-08-17 | 富士通株式会社 | 冗長ビットを有する記憶装置 |
| US4547867A (en) * | 1980-10-01 | 1985-10-15 | Intel Corporation | Multiple bit dynamic random-access memory |
| JPH0670880B2 (ja) * | 1983-01-21 | 1994-09-07 | 株式会社日立マイコンシステム | 半導体記憶装置 |
| JP2590897B2 (ja) * | 1987-07-20 | 1997-03-12 | 日本電気株式会社 | 半導体メモリ |
| JPH01109599A (ja) * | 1987-10-22 | 1989-04-26 | Nec Corp | 書込み・消去可能な半導体記憶装置 |
| US4885720A (en) * | 1988-04-01 | 1989-12-05 | International Business Machines Corporation | Memory device and method implementing wordline redundancy without an access time penalty |
| JP2698834B2 (ja) * | 1988-11-22 | 1998-01-19 | 株式会社日立製作所 | 不揮発性記憶装置 |
| NL8900026A (nl) * | 1989-01-06 | 1990-08-01 | Philips Nv | Matrixgeheugen, bevattende standaardblokken, standaardsubblokken, een redundant blok, en redundante subblokken, alsmede geintegreerde schakeling bevattende meerdere van zulke matrixgeheugens. |
| JPH02208898A (ja) * | 1989-02-08 | 1990-08-20 | Seiko Epson Corp | 半導体記憶装置 |
| JPH05109292A (ja) * | 1991-10-14 | 1993-04-30 | Toshiba Corp | 不揮発性半導体記憶装置 |
-
1991
- 1991-12-27 JP JP3359812A patent/JP2738195B2/ja not_active Expired - Fee Related
-
1992
- 1992-12-03 US US07/985,607 patent/US5329488A/en not_active Expired - Lifetime
- 1992-12-09 EP EP92311210A patent/EP0549193B1/en not_active Expired - Lifetime
- 1992-12-09 DE DE69230281T patent/DE69230281T2/de not_active Expired - Fee Related
- 1992-12-26 KR KR1019920025605A patent/KR950014802B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US5329488A (en) | 1994-07-12 |
| JP2738195B2 (ja) | 1998-04-08 |
| DE69230281D1 (de) | 1999-12-16 |
| EP0549193B1 (en) | 1999-11-10 |
| EP0549193A2 (en) | 1993-06-30 |
| KR930014612A (ko) | 1993-07-23 |
| JPH05182491A (ja) | 1993-07-23 |
| EP0549193A3 (cg-RX-API-DMAC7.html) | 1994-04-27 |
| KR950014802B1 (ko) | 1995-12-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
| 8339 | Ceased/non-payment of the annual fee |