DE69226141T2 - Dreiphasiger dreistufiger Wechselrichter - Google Patents

Dreiphasiger dreistufiger Wechselrichter

Info

Publication number
DE69226141T2
DE69226141T2 DE69226141T DE69226141T DE69226141T2 DE 69226141 T2 DE69226141 T2 DE 69226141T2 DE 69226141 T DE69226141 T DE 69226141T DE 69226141 T DE69226141 T DE 69226141T DE 69226141 T2 DE69226141 T2 DE 69226141T2
Authority
DE
Germany
Prior art keywords
phase
stage inverter
inverter
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69226141T
Other languages
English (en)
Other versions
DE69226141D1 (de
Inventor
Mutsuhiro Mori
Ryuichi Saito
Shin Kimura
Kiyoshi Nakata
Syuuji Saitoo
Akira Horie
Yoshihiko Koike
Shigeki Sekine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3241681A external-priority patent/JP2707883B2/ja
Priority claimed from JP4013684A external-priority patent/JP2751707B2/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE69226141D1 publication Critical patent/DE69226141D1/de
Application granted granted Critical
Publication of DE69226141T2 publication Critical patent/DE69226141T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08148—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in composite switches
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    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
DE69226141T 1991-09-20 1992-09-17 Dreiphasiger dreistufiger Wechselrichter Expired - Fee Related DE69226141T2 (de)

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JP3241681A JP2707883B2 (ja) 1991-09-20 1991-09-20 インバータ装置
JP4013684A JP2751707B2 (ja) 1992-01-29 1992-01-29 半導体モジュール及びそれを使った電力変換装置

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Families Citing this family (104)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5731970A (en) * 1989-12-22 1998-03-24 Hitachi, Ltd. Power conversion device and semiconductor module suitable for use in the device
EP0533158B1 (de) * 1991-09-20 1998-07-08 Hitachi, Ltd. Dreiphasiger dreistufiger Wechselrichter
DE4418426B4 (de) * 1993-09-08 2007-08-02 Mitsubishi Denki K.K. Halbleiterleistungsmodul und Verfahren zur Herstellung des Halbleiterleistungsmoduls
JPH06233554A (ja) * 1993-01-28 1994-08-19 Fuji Electric Co Ltd インバータ装置
DE9403108U1 (de) * 1994-02-24 1994-04-14 Siemens Ag Niederinduktive Hochstromverschienung für Stromrichtermodule
JP3153408B2 (ja) * 1994-03-10 2001-04-09 株式会社日立製作所 直列多重電力変換器
DE4412407C2 (de) * 1994-04-11 1996-03-07 Jungheinrich Ag Schaltungsanordnung für den Betrieb mindestens eines batteriebetriebenen Elektromotors in einem Flurförderzeug
US5576943A (en) * 1995-05-22 1996-11-19 Kaman Electromagnetics Corporation Soft switched three phase inverter with staggered resonant recovery system
SE9502249D0 (sv) * 1995-06-21 1995-06-21 Abb Research Ltd Converter circuitry having at least one switching device and circuit module
JP3429921B2 (ja) * 1995-10-26 2003-07-28 三菱電機株式会社 半導体装置
US5748456A (en) * 1995-11-24 1998-05-05 Asea Brown Boveri Ag Power semiconductor module system
DE19758592B4 (de) * 1996-06-18 2005-01-27 Kabushiki Kaisha Toshiba, Kawasaki Verwendung von Schaltmodulen in einem Leistungsumrichter
JP3263317B2 (ja) * 1996-06-18 2002-03-04 株式会社東芝 スイッチングモジュールおよびモジュールを用いた電力変換器
FR2764713B1 (fr) * 1997-06-11 1999-07-16 Commissariat Energie Atomique Procede de commande d'au moins un transistor du type igbt apte a permettre le fonctionnement de celui-ci sous irradiation
GB9713136D0 (en) * 1997-06-20 1997-08-27 Switched Reluctance Drives Ltd Switching circuit for a reluctance machine
US5889668A (en) * 1997-09-05 1999-03-30 Electric Power Research Institute, Inc. Three-phase DC-to-AC power inverter with three-level poles
US6058031A (en) * 1997-10-23 2000-05-02 General Electric Company Five level high power motor drive converter and control system
US6051898A (en) * 1998-01-02 2000-04-18 Japan Servo Co., Ltd. Stepping motor having external rotor and electromagnetic-combined-permanent-magnet stator
SE511219C2 (sv) * 1998-01-27 1999-08-23 Asea Brown Boveri Omriktare där klampningsdioderna ersatts av en aktiv klampningskrets
US6340851B1 (en) 1998-03-23 2002-01-22 Electric Boat Corporation Modular transformer arrangement for use with multi-level power converter
US6118932A (en) * 1998-03-23 2000-09-12 Electric Boat Corporation Method and arrangement for a high voltage single-stage variable speed drive
DE19826731C2 (de) * 1998-06-16 2000-10-26 Gruendl & Hoffmann Halbbrückenbaugruppe
JP3383588B2 (ja) * 1998-08-04 2003-03-04 株式会社東芝 電力変換装置
DE19843692C2 (de) 1998-09-24 2003-04-30 Aloys Wobben Wechselrichter für die Einspeisung sinusförmiger Ströme in ein Wechselstromnetz
DE19961382A1 (de) 1999-07-31 2001-02-01 Alstom Anlagen Und Antriebssys Elektrische Schaltung, insbesondere für einen Mittelspannungsstromrichter
EP1198877B1 (de) * 1999-07-31 2004-06-16 ALSTOM Power Conversion GmbH Elektrische schaltung, insbesondere für einen mittelspannungsstromrichter
US6356043B2 (en) * 1999-09-09 2002-03-12 Matthew C. Baum Motor controller power switch arrangement
US6166602A (en) * 1999-09-27 2000-12-26 General Electric Company High-efficiency switching power amplifier
US6137703A (en) * 1999-11-23 2000-10-24 Otis Elevator Company Clamped bidirectional power switches
EP1921737B1 (de) * 2000-03-27 2016-12-21 Mitsubishi Denki Kabushiki Kaisha Einphasenwandlerschaltung, Wandlergerät und Kältekreislaufgerät
CA2400023C (en) * 2000-09-13 2009-07-14 Abb Research Ltd. An open-loop/closed-loop converter with active clamping switches
EP1347565A4 (de) * 2000-12-07 2007-03-14 Yaskawa Denki Seisakusho Kk Dreipegel-neutralpunkt-klemm-pwm-wechselrichter und neutralpunkt-spannungsregler
WO2002082543A1 (en) * 2001-03-30 2002-10-17 Hitachi, Ltd. Semiconductor device
JP3668708B2 (ja) * 2001-10-22 2005-07-06 株式会社日立製作所 故障検知システム
US7183616B2 (en) * 2002-03-31 2007-02-27 Alpha & Omega Semiconductor, Ltd. High speed switching MOSFETS using multi-parallel die packages with/without special leadframes
US8169062B2 (en) * 2002-07-02 2012-05-01 Alpha And Omega Semiconductor Incorporated Integrated circuit package for semiconductior devices with improved electric resistance and inductance
SE524014C2 (sv) 2002-10-09 2004-06-15 Abb Ab Omriktare samt förfarande för styrning av en omriktare
SE525572C2 (sv) 2002-12-23 2005-03-15 Danaher Motion Stockholm Ab Motordrivenhet av växelriktartyp
US7088073B2 (en) * 2003-01-24 2006-08-08 Toshiba Internationl Corporation Inverter drive system
EP1501180A1 (de) * 2003-07-23 2005-01-26 ABB Schweiz AG Umrichterschaltung
US20070230226A1 (en) * 2003-11-25 2007-10-04 Jih-Sheng Lai Multilevel intelligent universal auto-transformer
US6954366B2 (en) * 2003-11-25 2005-10-11 Electric Power Research Institute Multifunction hybrid intelligent universal transformer
US20070223258A1 (en) * 2003-11-25 2007-09-27 Jih-Sheng Lai Multilevel converters for intelligent high-voltage transformers
US7050311B2 (en) * 2003-11-25 2006-05-23 Electric Power Research Institute, Inc. Multilevel converter based intelligent universal transformer
US20050139259A1 (en) * 2003-12-30 2005-06-30 Robert Steigerwald Transformerless power conversion in an inverter for a photovoltaic system
JP4547231B2 (ja) * 2004-10-22 2010-09-22 日立オートモティブシステムズ株式会社 電力変換装置
US7327024B2 (en) * 2004-11-24 2008-02-05 General Electric Company Power module, and phase leg assembly
JP4600159B2 (ja) * 2005-06-01 2010-12-15 三菱電機株式会社 ３レベル電力変換装置
US7733674B2 (en) * 2006-11-22 2010-06-08 Nissan Motor Co., Ltd. Power conversion apparatus for converting direct current to polyphase alternating current
JPWO2008075418A1 (ja) * 2006-12-20 2010-04-02 三菱電機株式会社 ３レベル電力変換装置
JP2008193779A (ja) * 2007-02-02 2008-08-21 Fuji Electric Systems Co Ltd 半導体モジュール
US7986535B2 (en) * 2007-07-17 2011-07-26 Raytheon Company Methods and apparatus for a cascade converter using series resonant cells with zero voltage switching
US7839023B2 (en) * 2007-07-18 2010-11-23 Raytheon Company Methods and apparatus for three-phase inverter with reduced energy storage
DE102008007659A1 (de) * 2008-02-06 2009-02-19 Siemens Aktiengesellschaft Umrichter
JP4506848B2 (ja) 2008-02-08 2010-07-21 株式会社デンソー 半導体モジュール
US8080899B2 (en) * 2008-02-21 2011-12-20 Stellaris Corporation Photovoltaic ladder inverter
EP2107672A1 (de) * 2008-03-31 2009-10-07 SMA Solar Technology AG Dreiphasiger Wechselrichter ohne Verbindung zwischen dem Neutralleiter des Netzes und dem Mittelpunkt des Zwischenkreises
EP2182551A1 (de) * 2008-10-29 2010-05-05 ABB Research Ltd. Verbindungsanordnung für Halbleiter-Leistungsmodule
JP5476028B2 (ja) * 2009-04-17 2014-04-23 株式会社日立製作所 パワー半導体スイッチング素子のゲート駆動回路及びインバータ回路
DE112009004960B4 (de) 2009-06-19 2015-10-22 Mitsubishi Electric Corporation Leistungsumwandlungseinrichtung
JP5611684B2 (ja) * 2010-06-22 2014-10-22 株式会社東芝 電力変換装置
EP2413489B1 (de) * 2010-07-30 2013-09-11 Vinotech Holdings S.à.r.l. Hocheffizienter Halbbrücken Gleichstrom-Wechselstrom-Wandler
WO2012040257A1 (en) * 2010-09-21 2012-03-29 Curtiss-Wright Electro-Mechanical Corporation Two terminal multilevel converter
JP5724314B2 (ja) * 2010-11-16 2015-05-27 富士電機株式会社 パワー半導体モジュール
EP2456059B1 (de) 2010-11-17 2018-05-23 ABB Schweiz AG Schaltungszweigmodul für einen dreistufigen Umrichter und Verfahren zur Steuerung des Schaltzweigs
JP5218541B2 (ja) * 2010-12-14 2013-06-26 株式会社デンソー スイッチングモジュール
US8929114B2 (en) * 2011-02-24 2015-01-06 Virginia Tech Intellectual Properties, Inc. Three-level active neutral point clamped zero voltage switching converter
JP5659877B2 (ja) * 2011-03-07 2015-01-28 富士電機株式会社 電力変換装置
US8749939B2 (en) * 2011-05-13 2014-06-10 Mks Instruments, Inc. Method and system for shoot-through protection
CN102208403B (zh) * 2011-05-24 2013-03-20 嘉兴斯达半导体股份有限公司 一种半桥功率模块
CN103765749B (zh) 2011-08-30 2016-09-07 三菱电机株式会社 半导体装置
JP5663450B2 (ja) * 2011-10-18 2015-02-04 株式会社日立製作所 電力変換装置
WO2013151542A1 (en) * 2012-04-04 2013-10-10 Otis Elevator Company Multilevel converter
WO2013161045A1 (ja) 2012-04-26 2013-10-31 三菱電機株式会社 パワーモジュールおよびそれを用いた３レベル電力変換装置
EP2884651B1 (de) * 2012-08-10 2021-07-21 Mitsubishi Electric Corporation Dreistufiger leistungsumwandler
JP6102297B2 (ja) * 2013-02-06 2017-03-29 富士電機株式会社 半導体装置
CN104332446A (zh) * 2013-07-22 2015-02-04 西安永电电气有限责任公司 Dbc基板
DE202013104510U1 (de) 2013-10-04 2013-11-14 Abb Technology Ag Halbleiterstapel für Umrichter mit Snubber-Kondensatoren
WO2015104914A1 (ja) 2014-01-09 2015-07-16 日立オートモティブシステムズ株式会社 半導体装置並びにそれを用いた電力変換装置
US20150214830A1 (en) * 2014-01-24 2015-07-30 General Electric Company System and method of power conversion
EP3100301B1 (de) * 2014-01-30 2019-11-06 Cree Fayetteville, Inc. In hohem masse konfigurierbares strommodul mit niedrigem profil für eine stromvorrichtung zur stromteilung mit parallelgeschaltetem grossem bandabstand
CN103986354B (zh) * 2014-05-23 2016-10-12 台达电子企业管理（上海）有限公司 三电平整流器
CN104113192A (zh) * 2014-06-24 2014-10-22 许继电气股份有限公司 Igbt三电平功率模块
DE102014111931B4 (de) 2014-08-20 2021-07-08 Infineon Technologies Ag Niederinduktive Schaltungsanordnung mit Laststromsammelleiterbahn
EP3093974B1 (de) * 2014-08-26 2019-02-20 Fuji Electric Co., Ltd. Dreistufiger leistungsumwandler
KR101853600B1 (ko) * 2015-06-23 2018-04-30 닛산 지도우샤 가부시키가이샤 충전 공용 인버터
DE102016216324A1 (de) * 2016-08-30 2018-03-01 Robert Bosch Gmbh Antriebssystem, insbesondere für ein Fahrzeug, und Verfahren zum Aufheizen eines Antriebssystems
JP6665759B2 (ja) * 2016-11-10 2020-03-13 三菱電機株式会社 高周波回路
EP3480846A1 (de) 2017-11-03 2019-05-08 Infineon Technologies AG Halbleiteranordnung mit zuverlässig schaltenden steuerbaren halbleiterelementen
FR3073689B1 (fr) * 2017-11-10 2020-07-24 Commissariat Energie Atomique Module de commutation pour onduleur ou redresseur de tension
KR102518216B1 (ko) * 2017-12-07 2023-04-06 현대자동차주식회사 전력 모듈, 그의 제조 방법 및 그를 가지는 차량
DE102017011878A1 (de) 2017-12-21 2019-06-27 3-5 Power Electronics GmbH Stapelförmiges III-V-Halbleiterbauelement
CN112005482B (zh) * 2018-04-27 2023-12-12 东芝三菱电机产业系统株式会社 三电平电力变换装置、三电平电力变换装置的控制方法及存储介质
EP3748835A1 (de) 2019-06-06 2020-12-09 Infineon Technologies AG Leistungshalbleitermodulanordnung
CN110247568B (zh) * 2019-06-29 2020-11-13 东北电力大学 一种三相二极管钳位型三电平双输出逆变器拓扑结构
EP3761492B1 (de) * 2019-07-05 2023-01-04 Infineon Technologies AG Schutzbeschaltung und leistungshalbleitermodul mit der beschaltung
JP7408941B2 (ja) 2019-07-25 2024-01-09 富士電機株式会社 電力変換装置
JP7160007B2 (ja) * 2019-09-20 2022-10-25 トヨタ自動車株式会社 電源装置
CN111106098B (zh) * 2019-12-13 2021-10-22 扬州国扬电子有限公司 一种低寄生电感布局的功率模块
JP7351209B2 (ja) 2019-12-17 2023-09-27 富士電機株式会社 半導体装置
JP2021097146A (ja) 2019-12-18 2021-06-24 富士電機株式会社 半導体装置
JP7396041B2 (ja) * 2019-12-27 2023-12-12 ニデックパワートレインシステムズ株式会社 モータ駆動用制御基板、及び電動オイルポンプ
CN212324008U (zh) * 2020-04-20 2021-01-08 阳光电源股份有限公司 一种逆变器及其功率单元和功率模块
DE102021123308A1 (de) 2021-09-09 2023-03-09 Bayerische Motoren Werke Aktiengesellschaft Halbleitermodul mit zumindest einem ersten Halbleiterelement und einem seriell zum ersten Halbleiterelement verschalteten zweiten Halbleiterelement, elektrische Vollbrücke, Leistungsfaktorkorrekturschaltung sowie Resonanzwandler

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2435883A1 (fr) * 1978-06-29 1980-04-04 Materiel Telephonique Circuit integre hybride et son procede de fabrication
JPS58187023A (ja) * 1982-04-27 1983-11-01 Fanuc Ltd トランジスタモジユ−ル
JPS6081660U (ja) * 1983-11-10 1985-06-06 富士電機株式会社 ダ−リントントランジスタ
JPS60239051A (ja) * 1984-05-11 1985-11-27 Mitsubishi Electric Corp 半導体装置
DE3420535C2 (de) * 1984-06-01 1986-04-30 Anton Piller GmbH & Co KG, 3360 Osterode Halbleiter-Modul für eine schnelle Schaltanordnung
JPS6240069A (ja) * 1985-08-16 1987-02-21 Meidensha Electric Mfg Co Ltd 電圧形インバ−タの接続構造
US4853762A (en) * 1986-03-27 1989-08-01 International Rectifier Corporation Semi-conductor modules
US4920405A (en) * 1986-11-28 1990-04-24 Fuji Electric Co., Ltd. Overcurrent limiting semiconductor device
US4907068A (en) * 1987-01-21 1990-03-06 Siemens Aktiengesellschaft Semiconductor arrangement having at least one semiconductor body
US4816984A (en) * 1987-02-06 1989-03-28 Siemens Aktiengesellschaft Bridge arm with transistors and recovery diodes
JP2576552B2 (ja) * 1987-12-16 1997-01-29 株式会社明電舎 インバータの素子配列
DE3907940A1 (de) * 1988-05-05 1989-11-16 Asea Brown Boveri Verfahren zur symmetrierung der spannungsaufteilung an stromrichtern mit mehrpunktschaltung
JP2658427B2 (ja) * 1989-01-17 1997-09-30 富士電機株式会社 電力変換用半導体素子のスナバ回路とそのモジュール装置
US5182626A (en) * 1989-09-20 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and method of manufacturing the same
DE3937045A1 (de) * 1989-11-07 1991-05-08 Abb Ixys Semiconductor Gmbh Leistungshalbleitermodul
US4965710A (en) * 1989-11-16 1990-10-23 International Rectifier Corporation Insulated gate bipolar transistor power module
JP2566021B2 (ja) * 1989-11-22 1996-12-25 三菱電機株式会社 インバータ装置の運転方法
US5025360A (en) * 1989-12-20 1991-06-18 Sundstrand Corporation Inverter switch with parallel free-wheel diodes
JP2692765B2 (ja) * 1989-12-22 1997-12-17 株式会社日立製作所 ダイオード及びｉｇｂｔとの並列回路とそのモジュール及びそれを用いた電力変換装置
US5166760A (en) * 1990-02-28 1992-11-24 Hitachi, Ltd. Semiconductor Schottky barrier device with pn junctions
US5278443A (en) * 1990-02-28 1994-01-11 Hitachi, Ltd. Composite semiconductor device with Schottky and pn junctions
JP2590284B2 (ja) * 1990-02-28 1997-03-12 株式会社日立製作所 半導体装置及びその製造方法
US5119286A (en) * 1989-12-28 1992-06-02 Sundstrand Corporation Modular circuit board
JPH04322174A (ja) * 1991-04-19 1992-11-12 Toshiba Corp 車両用電力変換装置
US5184291A (en) * 1991-06-13 1993-02-02 Crowe Lawrence E Converter and inverter support module
EP0533158B1 (de) * 1991-09-20 1998-07-08 Hitachi, Ltd. Dreiphasiger dreistufiger Wechselrichter
US5170337A (en) * 1992-01-29 1992-12-08 General Electric Company Low-inductance package for multiple paralleled devices operating at high frequency

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DE69226141D1 (de) 1998-08-13
EP0838855B1 (de) 2004-11-24
KR100323996B1 (ko) 2002-06-20
EP0533158B1 (de) 1998-07-08
EP1808954A2 (de) 2007-07-18
DE69233450T2 (de) 2005-12-15
EP0533158A3 (de) 1994-12-28
EP0838855A2 (de) 1998-04-29
EP1808954A3 (de) 2008-10-22
KR100311538B1 (ko) 2001-10-18
EP1492220A2 (de) 2004-12-29
EP0838855A3 (de) 1998-07-29
US5459655A (en) 1995-10-17
US5801936A (en) 1998-09-01
EP1492220A3 (de) 2005-03-09
EP0533158A2 (de) 1993-03-24
DE69233450D1 (de) 2004-12-30
KR930006903A (ko) 1993-04-22

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