DE69218878T2 - Nichtflüchtiger Halbleiterspeicher - Google Patents

Nichtflüchtiger Halbleiterspeicher

Info

Publication number
DE69218878T2
DE69218878T2 DE69218878T DE69218878T DE69218878T2 DE 69218878 T2 DE69218878 T2 DE 69218878T2 DE 69218878 T DE69218878 T DE 69218878T DE 69218878 T DE69218878 T DE 69218878T DE 69218878 T2 DE69218878 T2 DE 69218878T2
Authority
DE
Germany
Prior art keywords
semiconductor memory
volatile semiconductor
volatile
memory
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69218878T
Other languages
English (en)
Other versions
DE69218878D1 (de
Inventor
Junichi Miyamoto
Kuniyoshi Yoshikawa
Kiyomi Naruke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69218878D1 publication Critical patent/DE69218878D1/de
Publication of DE69218878T2 publication Critical patent/DE69218878T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
DE69218878T 1991-10-24 1992-10-21 Nichtflüchtiger Halbleiterspeicher Expired - Fee Related DE69218878T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3303830A JP2951082B2 (ja) 1991-10-24 1991-10-24 半導体記憶装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69218878D1 DE69218878D1 (de) 1997-05-15
DE69218878T2 true DE69218878T2 (de) 1997-09-04

Family

ID=17925826

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69218878T Expired - Fee Related DE69218878T2 (de) 1991-10-24 1992-10-21 Nichtflüchtiger Halbleiterspeicher

Country Status (5)

Country Link
US (1) US5365098A (de)
EP (1) EP0539184B1 (de)
JP (1) JP2951082B2 (de)
KR (2) KR0124500B1 (de)
DE (1) DE69218878T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3469362B2 (ja) * 1994-08-31 2003-11-25 株式会社東芝 半導体記憶装置
JP3008812B2 (ja) * 1995-03-22 2000-02-14 日本電気株式会社 不揮発性半導体記憶装置およびその製造方法
KR100311486B1 (ko) * 1995-11-23 2002-08-17 현대반도체 주식회사 반도체메모리장치및그의제조방법
FR2767219B1 (fr) * 1997-08-08 1999-09-17 Commissariat Energie Atomique Dispositif memoire non volatile programmable et effacable electriquement compatible avec un procede de fabrication cmos/soi
US6229148B1 (en) * 1997-08-11 2001-05-08 Micron Technology, Inc. Ion implantation with programmable energy, angle, and beam current
JPH1168105A (ja) * 1997-08-26 1999-03-09 Mitsubishi Electric Corp 半導体装置
EP0969507B1 (de) 1998-06-30 2006-11-15 STMicroelectronics S.r.l. Verfahren zur Herstellung einer EEPROM-Speicherzelle
US6867459B2 (en) * 2001-07-05 2005-03-15 Isonics Corporation Isotopically pure silicon-on-insulator wafers and method of making same
KR100466187B1 (ko) * 2002-05-17 2005-01-13 주식회사 하이닉스반도체 플래시 메모리 셀
KR100953066B1 (ko) * 2003-06-30 2010-04-13 주식회사 하이닉스반도체 플래쉬 메모리 셀
US8389366B2 (en) * 2008-05-30 2013-03-05 Freescale Semiconductor, Inc. Resurf semiconductor device charge balancing
US8587036B2 (en) * 2008-12-12 2013-11-19 Ememory Technology Inc. Non-volatile memory and fabricating method thereof
JP2010147241A (ja) * 2008-12-18 2010-07-01 Toshiba Corp 不揮発性半導体記憶装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60153167A (ja) * 1984-01-20 1985-08-12 Matsushita Electronics Corp 半導体集積回路
JPS61163660A (ja) * 1985-01-14 1986-07-24 Seiko Epson Corp 半導体記憶素子
JPS61190981A (ja) * 1985-02-20 1986-08-25 Casio Comput Co Ltd 半導体装置
US4947221A (en) * 1985-11-29 1990-08-07 General Electric Company Memory cell for a dense EPROM
JPS63255964A (ja) * 1987-04-14 1988-10-24 Toshiba Corp 半導体装置
JPS63255972A (ja) * 1987-04-14 1988-10-24 Toshiba Corp 半導体装置の製造方法
JPS6437878A (en) * 1987-08-03 1989-02-08 Nec Corp Nonvolatile semiconductor storage device
EP0329569B1 (de) * 1988-02-17 1995-07-05 Fujitsu Limited Halbleiteranordnung mit einer dünnen isolierenden Schicht
JPH0752774B2 (ja) * 1988-04-25 1995-06-05 日本電気株式会社 半導体装置
JPH025422A (ja) * 1988-06-24 1990-01-10 Hitachi Ltd 半導体装置
JPH02110977A (ja) * 1988-10-20 1990-04-24 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
KR100271341B1 (ko) 2000-11-01
KR19990008586A (ko) 1999-02-05
US5365098A (en) 1994-11-15
DE69218878D1 (de) 1997-05-15
KR0124500B1 (ko) 1997-12-11
KR930009078A (ko) 1993-05-22
JP2951082B2 (ja) 1999-09-20
JPH05121755A (ja) 1993-05-18
EP0539184A2 (de) 1993-04-28
EP0539184B1 (de) 1997-04-09
EP0539184A3 (en) 1993-08-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee