JPS6437878A - Nonvolatile semiconductor storage device - Google Patents

Nonvolatile semiconductor storage device

Info

Publication number
JPS6437878A
JPS6437878A JP19495587A JP19495587A JPS6437878A JP S6437878 A JPS6437878 A JP S6437878A JP 19495587 A JP19495587 A JP 19495587A JP 19495587 A JP19495587 A JP 19495587A JP S6437878 A JPS6437878 A JP S6437878A
Authority
JP
Japan
Prior art keywords
gate
floating gate
film
electrons
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19495587A
Other languages
Japanese (ja)
Inventor
Mitsumasa Ooishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP19495587A priority Critical patent/JPS6437878A/en
Publication of JPS6437878A publication Critical patent/JPS6437878A/en
Pending legal-status Critical Current

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  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To offset charges injected for storing data by holes or electrons in a floating gate, and to improve storage holding characteristics by forming the floating gate by an impurity semiconductor having polarity reverse to injection charges. CONSTITUTION:An N-type source region 9a and an N-type drain region 9b are shaped to the surface layer section of a P-type Si substrate 1 at an interval while being surrounded by a thick field oxide film 2, and a first gate insulating film 3 is formed extending over the centers of the surfaces of the regions 9a and 9b from the surface exposed between these regions 9a and 9b of the substrate 1. A floating gate 5, a second gate insulating film 6 and a control gate 7 are shaped onto the film 3 in response to the exposed section of the substrate 1, and these gates and film are coated with an interlayer insulating film 8, but the floating gate 5 is composed of a P-type polycrystalline Si layer containing boron of approximately 1X10<19>/cm<3>. Accordingly, electrons are recombined with holes in the gate 5 when thermoelectrons are injected to the gate 5 and stored, and electrons in a conduction band are dissipated and the storage time is lengthened.
JP19495587A 1987-08-03 1987-08-03 Nonvolatile semiconductor storage device Pending JPS6437878A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19495587A JPS6437878A (en) 1987-08-03 1987-08-03 Nonvolatile semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19495587A JPS6437878A (en) 1987-08-03 1987-08-03 Nonvolatile semiconductor storage device

Publications (1)

Publication Number Publication Date
JPS6437878A true JPS6437878A (en) 1989-02-08

Family

ID=16333107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19495587A Pending JPS6437878A (en) 1987-08-03 1987-08-03 Nonvolatile semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS6437878A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05121755A (en) * 1991-10-24 1993-05-18 Toshiba Corp Semiconductor memory device and manufacture thereof
JPH07169861A (en) * 1993-12-14 1995-07-04 Nec Corp Non-volatile semiconductor memory
KR100303061B1 (en) * 1993-10-15 2001-11-22 이데이 노부유끼 Nonvolatile memory device and manufacturing method thereof
JP2012069822A (en) * 2010-09-24 2012-04-05 Seiko Instruments Inc Semiconductor nonvolatile memory device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05121755A (en) * 1991-10-24 1993-05-18 Toshiba Corp Semiconductor memory device and manufacture thereof
KR100303061B1 (en) * 1993-10-15 2001-11-22 이데이 노부유끼 Nonvolatile memory device and manufacturing method thereof
JPH07169861A (en) * 1993-12-14 1995-07-04 Nec Corp Non-volatile semiconductor memory
JP2012069822A (en) * 2010-09-24 2012-04-05 Seiko Instruments Inc Semiconductor nonvolatile memory device

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