JPS6437878A - Nonvolatile semiconductor storage device - Google Patents
Nonvolatile semiconductor storage deviceInfo
- Publication number
- JPS6437878A JPS6437878A JP19495587A JP19495587A JPS6437878A JP S6437878 A JPS6437878 A JP S6437878A JP 19495587 A JP19495587 A JP 19495587A JP 19495587 A JP19495587 A JP 19495587A JP S6437878 A JPS6437878 A JP S6437878A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- floating gate
- film
- electrons
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To offset charges injected for storing data by holes or electrons in a floating gate, and to improve storage holding characteristics by forming the floating gate by an impurity semiconductor having polarity reverse to injection charges. CONSTITUTION:An N-type source region 9a and an N-type drain region 9b are shaped to the surface layer section of a P-type Si substrate 1 at an interval while being surrounded by a thick field oxide film 2, and a first gate insulating film 3 is formed extending over the centers of the surfaces of the regions 9a and 9b from the surface exposed between these regions 9a and 9b of the substrate 1. A floating gate 5, a second gate insulating film 6 and a control gate 7 are shaped onto the film 3 in response to the exposed section of the substrate 1, and these gates and film are coated with an interlayer insulating film 8, but the floating gate 5 is composed of a P-type polycrystalline Si layer containing boron of approximately 1X10<19>/cm<3>. Accordingly, electrons are recombined with holes in the gate 5 when thermoelectrons are injected to the gate 5 and stored, and electrons in a conduction band are dissipated and the storage time is lengthened.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19495587A JPS6437878A (en) | 1987-08-03 | 1987-08-03 | Nonvolatile semiconductor storage device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19495587A JPS6437878A (en) | 1987-08-03 | 1987-08-03 | Nonvolatile semiconductor storage device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6437878A true JPS6437878A (en) | 1989-02-08 |
Family
ID=16333107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19495587A Pending JPS6437878A (en) | 1987-08-03 | 1987-08-03 | Nonvolatile semiconductor storage device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6437878A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05121755A (en) * | 1991-10-24 | 1993-05-18 | Toshiba Corp | Semiconductor memory device and manufacture thereof |
JPH07169861A (en) * | 1993-12-14 | 1995-07-04 | Nec Corp | Non-volatile semiconductor memory |
KR100303061B1 (en) * | 1993-10-15 | 2001-11-22 | 이데이 노부유끼 | Nonvolatile memory device and manufacturing method thereof |
JP2012069822A (en) * | 2010-09-24 | 2012-04-05 | Seiko Instruments Inc | Semiconductor nonvolatile memory device |
-
1987
- 1987-08-03 JP JP19495587A patent/JPS6437878A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05121755A (en) * | 1991-10-24 | 1993-05-18 | Toshiba Corp | Semiconductor memory device and manufacture thereof |
KR100303061B1 (en) * | 1993-10-15 | 2001-11-22 | 이데이 노부유끼 | Nonvolatile memory device and manufacturing method thereof |
JPH07169861A (en) * | 1993-12-14 | 1995-07-04 | Nec Corp | Non-volatile semiconductor memory |
JP2012069822A (en) * | 2010-09-24 | 2012-04-05 | Seiko Instruments Inc | Semiconductor nonvolatile memory device |
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