DE69218747T2 - Lateraler zweifach diffundierter Fieldeffekttransistor mit einem isolierten Gate und Verfahren zur Herstellung - Google Patents

Lateraler zweifach diffundierter Fieldeffekttransistor mit einem isolierten Gate und Verfahren zur Herstellung

Info

Publication number
DE69218747T2
DE69218747T2 DE69218747T DE69218747T DE69218747T2 DE 69218747 T2 DE69218747 T2 DE 69218747T2 DE 69218747 T DE69218747 T DE 69218747T DE 69218747 T DE69218747 T DE 69218747T DE 69218747 T2 DE69218747 T2 DE 69218747T2
Authority
DE
Germany
Prior art keywords
zone
layer
thin layer
drift
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69218747T
Other languages
German (de)
English (en)
Other versions
DE69218747D1 (de
Inventor
Taylor R Efland
Oh-Kwong Dept Electronic Kwon
Satwinder Mahli
Wai Tung Ng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69218747D1 publication Critical patent/DE69218747D1/de
Publication of DE69218747T2 publication Critical patent/DE69218747T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/096—Lateral transistor

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69218747T 1991-12-30 1992-12-23 Lateraler zweifach diffundierter Fieldeffekttransistor mit einem isolierten Gate und Verfahren zur Herstellung Expired - Fee Related DE69218747T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/815,732 US5306652A (en) 1991-12-30 1991-12-30 Lateral double diffused insulated gate field effect transistor fabrication process

Publications (2)

Publication Number Publication Date
DE69218747D1 DE69218747D1 (de) 1997-05-07
DE69218747T2 true DE69218747T2 (de) 1997-07-10

Family

ID=25218688

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69218747T Expired - Fee Related DE69218747T2 (de) 1991-12-30 1992-12-23 Lateraler zweifach diffundierter Fieldeffekttransistor mit einem isolierten Gate und Verfahren zur Herstellung

Country Status (6)

Country Link
US (3) US5306652A (cg-RX-API-DMAC7.html)
EP (1) EP0550015B1 (cg-RX-API-DMAC7.html)
JP (1) JP3226650B2 (cg-RX-API-DMAC7.html)
KR (1) KR100292567B1 (cg-RX-API-DMAC7.html)
DE (1) DE69218747T2 (cg-RX-API-DMAC7.html)
TW (1) TW273040B (cg-RX-API-DMAC7.html)

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Also Published As

Publication number Publication date
DE69218747D1 (de) 1997-05-07
EP0550015B1 (en) 1997-04-02
JPH05343675A (ja) 1993-12-24
JP3226650B2 (ja) 2001-11-05
KR930015099A (ko) 1993-07-23
US5578514A (en) 1996-11-26
KR100292567B1 (ko) 2001-09-17
US5306652A (en) 1994-04-26
TW273040B (cg-RX-API-DMAC7.html) 1996-03-21
EP0550015A1 (en) 1993-07-07
US5406110A (en) 1995-04-11

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