DE69130547T2 - Widerstände aus polykristallinem Silizium für integrierte Schaltungen - Google Patents
Widerstände aus polykristallinem Silizium für integrierte SchaltungenInfo
- Publication number
- DE69130547T2 DE69130547T2 DE69130547T DE69130547T DE69130547T2 DE 69130547 T2 DE69130547 T2 DE 69130547T2 DE 69130547 T DE69130547 T DE 69130547T DE 69130547 T DE69130547 T DE 69130547T DE 69130547 T2 DE69130547 T2 DE 69130547T2
- Authority
- DE
- Germany
- Prior art keywords
- polycrystalline silicon
- layer
- region
- resistor
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 59
- 238000000034 method Methods 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 10
- 238000009413 insulation Methods 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000005380 borophosphosilicate glass Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 125000006850 spacer group Chemical group 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007688 edging Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/47—Resistors having no potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/531,012 US5151376A (en) | 1990-05-31 | 1990-05-31 | Method of making polycrystalline silicon resistors for integrated circuits |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69130547D1 DE69130547D1 (de) | 1999-01-14 |
| DE69130547T2 true DE69130547T2 (de) | 1999-04-29 |
Family
ID=24115894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69130547T Expired - Fee Related DE69130547T2 (de) | 1990-05-31 | 1991-04-22 | Widerstände aus polykristallinem Silizium für integrierte Schaltungen |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US5151376A (enExample) |
| EP (1) | EP0459618B1 (enExample) |
| JP (1) | JP3418410B2 (enExample) |
| KR (1) | KR100231020B1 (enExample) |
| DE (1) | DE69130547T2 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5196233A (en) * | 1989-01-18 | 1993-03-23 | Sgs-Thomson Microelectronics, Inc. | Method for fabricating semiconductor circuits |
| US5151387A (en) | 1990-04-30 | 1992-09-29 | Sgs-Thomson Microelectronics, Inc. | Polycrystalline silicon contact structure |
| JPH0541378A (ja) * | 1991-03-15 | 1993-02-19 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| US5424570A (en) * | 1992-01-31 | 1995-06-13 | Sgs-Thomson Microelectronics, Inc. | Contact structure for improving photoresist adhesion on a dielectric layer |
| KR940008883B1 (ko) * | 1992-04-08 | 1994-09-28 | 삼성전자 주식회사 | 박막저항의 제조방법 |
| US6037623A (en) * | 1992-04-16 | 2000-03-14 | Stmicroelectronics, Inc. | Polycrystalline silicon resistors for integrated circuits |
| US5538915A (en) * | 1992-06-05 | 1996-07-23 | The Regents Of The University Of California | Process for forming synapses in neural networks and resistor therefor |
| US5395785A (en) * | 1993-12-17 | 1995-03-07 | Sgs-Thomson Microelectronics, Inc. | SRAM cell fabrication with interlevel dielectric planarization |
| US5545581A (en) * | 1994-12-06 | 1996-08-13 | International Business Machines Corporation | Plug strap process utilizing selective nitride and oxide etches |
| US5635418A (en) * | 1995-03-23 | 1997-06-03 | Micron Technology, Inc. | Method of making a resistor |
| US5723352A (en) * | 1995-08-03 | 1998-03-03 | Taiwan Semiconductor Manufacturing Company | Process to optimize performance and reliability of MOSFET devices |
| US6013931A (en) * | 1997-03-25 | 2000-01-11 | Kabushiki Kaisha Toshiba | Semiconductor device and method for producing the same |
| US6140684A (en) * | 1997-06-24 | 2000-10-31 | Stmicroelectronic, Inc. | SRAM cell structure with dielectric sidewall spacers and drain and channel regions defined along sidewall spacers |
| JPH11317527A (ja) | 1998-05-06 | 1999-11-16 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| KR100464941B1 (ko) * | 1998-12-24 | 2005-04-06 | 주식회사 하이닉스반도체 | 풀 씨모스 에스램 셀 제조 방법 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5267532A (en) * | 1975-12-03 | 1977-06-04 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor memory unit |
| US4110776A (en) * | 1976-09-27 | 1978-08-29 | Texas Instruments Incorporated | Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer |
| IT1094517B (it) * | 1978-04-28 | 1985-08-02 | Componenti Elettronici Sgs Ate | Procedimento per la fabbricazione di un elemento resistivo filiforme per circuito integrato |
| US4464212A (en) * | 1982-12-13 | 1984-08-07 | International Business Machines Corporation | Method for making high sheet resistivity resistors |
| JPS59155128A (ja) * | 1983-02-23 | 1984-09-04 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS60236257A (ja) * | 1984-05-09 | 1985-11-25 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| JPS61164241A (ja) * | 1985-01-16 | 1986-07-24 | Nec Corp | 半導体装置 |
| JPS61168955A (ja) * | 1985-01-22 | 1986-07-30 | Nec Corp | 半導体装置 |
| US4774203A (en) * | 1985-10-25 | 1988-09-27 | Hitachi, Ltd. | Method for making static random-access memory device |
| JPS62285462A (ja) * | 1986-06-03 | 1987-12-11 | Sony Corp | 半導体装置 |
| JPS63136668A (ja) * | 1986-11-28 | 1988-06-08 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
| JPS6469031A (en) * | 1987-09-10 | 1989-03-15 | Matsushita Electronics Corp | Manufacture of semiconductor device |
| US4835589A (en) * | 1987-09-28 | 1989-05-30 | Motorola, Inc. | Ram cell having trench sidewall load |
| JPH01152662A (ja) * | 1987-12-09 | 1989-06-15 | Fujitsu Ltd | 半導体記憶装置 |
| JP2913404B2 (ja) * | 1988-06-28 | 1999-06-28 | コニカ株式会社 | 放射線画像情報読取装置及び放射線画像情報読取方法 |
-
1990
- 1990-05-31 US US07/531,012 patent/US5151376A/en not_active Expired - Lifetime
-
1991
- 1991-04-22 DE DE69130547T patent/DE69130547T2/de not_active Expired - Fee Related
- 1991-04-22 EP EP91303596A patent/EP0459618B1/en not_active Expired - Lifetime
- 1991-05-30 JP JP12640891A patent/JP3418410B2/ja not_active Expired - Fee Related
- 1991-05-31 KR KR1019910009132A patent/KR100231020B1/ko not_active Expired - Fee Related
-
1992
- 1992-04-16 US US07/869,517 patent/US5825060A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5825060A (en) | 1998-10-20 |
| EP0459618B1 (en) | 1998-12-02 |
| JP3418410B2 (ja) | 2003-06-23 |
| KR100231020B1 (ko) | 1999-11-15 |
| KR910020892A (ko) | 1991-12-20 |
| EP0459618A2 (en) | 1991-12-04 |
| EP0459618A3 (enExample) | 1994-01-19 |
| US5151376A (en) | 1992-09-29 |
| DE69130547D1 (de) | 1999-01-14 |
| JPH04230069A (ja) | 1992-08-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69226405T2 (de) | Geschichtete CMOS SRAM Zelle mit polysilizium-Lasttransistoren | |
| DE69307274T2 (de) | Halbleitervorrichtung und Wafer-Struktur mit einer planaren Verbindungsstruktur, vergraben durch Wafer-Bonding | |
| DE69120488T2 (de) | Verfahren zur Herstellung eines Isolierungsbereiches von Halbleiterbauelementen | |
| DE69132387T2 (de) | Verfahren zum Herstellen einer Feldeffektanordnung mit Kanal aus polykristallinem Silizium | |
| DE69122992T2 (de) | Verfahren zum Herstellen elektrischer Kontakte an Gatestrukturen auf integrierten Schaltungen | |
| DE3856350T2 (de) | Verfahren zur Herstellung einer Silicid-Halbleiterelement mit Polysilizium-Bereiche | |
| DE3854677T2 (de) | Komplementäre Feldeffekttransistorstruktur. | |
| DE69014998T2 (de) | Lokalverbindungen für integrierte Schaltungen. | |
| DE4220497A1 (de) | Halbleiterspeicherbauelement und verfahren zu dessen herstellung | |
| DE4140681A1 (de) | Masken-nur-lesespeicher (masken-rom) und verfahren zu dessen herstellung | |
| DE69228099T2 (de) | Verfahren zur Herstellung von Sacklöchern und hergestellte Struktur | |
| DE69228786T2 (de) | Verbindungsleitung und Widerstand für intergrierte Schaltungen | |
| DE69119800T2 (de) | Halbleiterspeicher | |
| DE3930016C2 (de) | Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung | |
| DE69214339T2 (de) | Struktur und Verfahren für die Bildung selbstjustierender Kontakte | |
| DE69031243T2 (de) | Dynamische wahlfreie Speichereinrichtung | |
| DE69226223T2 (de) | Kontaktausrichtung für Festwertspeicher | |
| DE3881074T2 (de) | Nichtfluechtige, durch ultraviolette strahlung loeschbare halbleiterspeicheranordnung und verfahren zu ihrer herstellung. | |
| EP0459618B1 (en) | Polycrystalline silicon resistors for integrated circuits | |
| DE69229014T2 (de) | Halbleiterspeichereinrichtung mit Dünnfilmtransistor und seine Herstellungsmethode | |
| DE3109074C2 (enExample) | ||
| DE69330302T2 (de) | Halbleiterspeicheranordnung und Verfahren zu ihrer Herstellung | |
| EP0591769B1 (de) | Herstellverfahren für ein selbstjustiertes Kontaktloch und Halbleiterstruktur | |
| DE2655917A1 (de) | Integrierte schaltung | |
| DE3142448C2 (de) | MOS-Transistor und Verfahren zu seiner Herstellung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |