JP3418410B2 - Ｉｃデバイス内に抵抗器構造を組み立てる方法 - Google Patents

Ｉｃデバイス内に抵抗器構造を組み立てる方法

Info

Publication number
JP3418410B2
JP3418410B2 JP12640891A JP12640891A JP3418410B2 JP 3418410 B2 JP3418410 B2 JP 3418410B2 JP 12640891 A JP12640891 A JP 12640891A JP 12640891 A JP12640891 A JP 12640891A JP 3418410 B2 JP3418410 B2 JP 3418410B2
Authority
JP
Japan
Prior art keywords
resistor structure
polycrystalline silicon
film
insulating film
assembling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP12640891A
Other languages
English (en)
Japanese (ja)
Other versions
JPH04230069A (ja
Inventor
チャールズ・アール・スピナー、ザ・サード
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics lnc USA
Original Assignee
STMicroelectronics lnc USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics lnc USA filed Critical STMicroelectronics lnc USA
Publication of JPH04230069A publication Critical patent/JPH04230069A/ja
Application granted granted Critical
Publication of JP3418410B2 publication Critical patent/JP3418410B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP12640891A 1990-05-31 1991-05-30 Ｉｃデバイス内に抵抗器構造を組み立てる方法 Expired - Fee Related JP3418410B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US531012 1990-05-31
US07/531,012 US5151376A (en) 1990-05-31 1990-05-31 Method of making polycrystalline silicon resistors for integrated circuits

Publications (2)

Publication Number Publication Date
JPH04230069A JPH04230069A (ja) 1992-08-19
JP3418410B2 true JP3418410B2 (ja) 2003-06-23

Family

ID=24115894

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12640891A Expired - Fee Related JP3418410B2 (ja) 1990-05-31 1991-05-30 Ｉｃデバイス内に抵抗器構造を組み立てる方法

Country Status (5)

Country Link
US (2) US5151376A (enExample)
EP (1) EP0459618B1 (enExample)
JP (1) JP3418410B2 (enExample)
KR (1) KR100231020B1 (enExample)
DE (1) DE69130547T2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196233A (en) * 1989-01-18 1993-03-23 Sgs-Thomson Microelectronics, Inc. Method for fabricating semiconductor circuits
US5151387A (en) 1990-04-30 1992-09-29 Sgs-Thomson Microelectronics, Inc. Polycrystalline silicon contact structure
JPH0541378A (ja) * 1991-03-15 1993-02-19 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5424570A (en) * 1992-01-31 1995-06-13 Sgs-Thomson Microelectronics, Inc. Contact structure for improving photoresist adhesion on a dielectric layer
KR940008883B1 (ko) * 1992-04-08 1994-09-28 삼성전자 주식회사 박막저항의 제조방법
US6037623A (en) * 1992-04-16 2000-03-14 Stmicroelectronics, Inc. Polycrystalline silicon resistors for integrated circuits
US5538915A (en) * 1992-06-05 1996-07-23 The Regents Of The University Of California Process for forming synapses in neural networks and resistor therefor
US5395785A (en) * 1993-12-17 1995-03-07 Sgs-Thomson Microelectronics, Inc. SRAM cell fabrication with interlevel dielectric planarization
US5545581A (en) * 1994-12-06 1996-08-13 International Business Machines Corporation Plug strap process utilizing selective nitride and oxide etches
US5635418A (en) * 1995-03-23 1997-06-03 Micron Technology, Inc. Method of making a resistor
US5723352A (en) * 1995-08-03 1998-03-03 Taiwan Semiconductor Manufacturing Company Process to optimize performance and reliability of MOSFET devices
US6013931A (en) * 1997-03-25 2000-01-11 Kabushiki Kaisha Toshiba Semiconductor device and method for producing the same
US6140684A (en) * 1997-06-24 2000-10-31 Stmicroelectronic, Inc. SRAM cell structure with dielectric sidewall spacers and drain and channel regions defined along sidewall spacers
JPH11317527A (ja) 1998-05-06 1999-11-16 Mitsubishi Electric Corp 半導体装置及びその製造方法
KR100464941B1 (ko) * 1998-12-24 2005-04-06 주식회사 하이닉스반도체 풀 씨모스 에스램 셀 제조 방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5267532A (en) * 1975-12-03 1977-06-04 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory unit
US4110776A (en) * 1976-09-27 1978-08-29 Texas Instruments Incorporated Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer
IT1094517B (it) * 1978-04-28 1985-08-02 Componenti Elettronici Sgs Ate Procedimento per la fabbricazione di un elemento resistivo filiforme per circuito integrato
US4464212A (en) * 1982-12-13 1984-08-07 International Business Machines Corporation Method for making high sheet resistivity resistors
JPS59155128A (ja) * 1983-02-23 1984-09-04 Mitsubishi Electric Corp 半導体装置の製造方法
JPS60236257A (ja) * 1984-05-09 1985-11-25 Matsushita Electric Ind Co Ltd 半導体装置
JPS61164241A (ja) * 1985-01-16 1986-07-24 Nec Corp 半導体装置
JPS61168955A (ja) * 1985-01-22 1986-07-30 Nec Corp 半導体装置
US4774203A (en) * 1985-10-25 1988-09-27 Hitachi, Ltd. Method for making static random-access memory device
JPS62285462A (ja) * 1986-06-03 1987-12-11 Sony Corp 半導体装置
JPS63136668A (ja) * 1986-11-28 1988-06-08 Fuji Electric Co Ltd 半導体装置の製造方法
JPS6469031A (en) * 1987-09-10 1989-03-15 Matsushita Electronics Corp Manufacture of semiconductor device
US4835589A (en) * 1987-09-28 1989-05-30 Motorola, Inc. Ram cell having trench sidewall load
JPH01152662A (ja) * 1987-12-09 1989-06-15 Fujitsu Ltd 半導体記憶装置
JP2913404B2 (ja) * 1988-06-28 1999-06-28 コニカ株式会社 放射線画像情報読取装置及び放射線画像情報読取方法

Also Published As

Publication number Publication date
US5825060A (en) 1998-10-20
EP0459618B1 (en) 1998-12-02
KR100231020B1 (ko) 1999-11-15
KR910020892A (ko) 1991-12-20
EP0459618A2 (en) 1991-12-04
EP0459618A3 (enExample) 1994-01-19
US5151376A (en) 1992-09-29
DE69130547D1 (de) 1999-01-14
DE69130547T2 (de) 1999-04-29
JPH04230069A (ja) 1992-08-19

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