IT1094517B - Procedimento per la fabbricazione di un elemento resistivo filiforme per circuito integrato - Google Patents

Procedimento per la fabbricazione di un elemento resistivo filiforme per circuito integrato

Info

Publication number
IT1094517B
IT1094517B IT22788/78A IT2278878A IT1094517B IT 1094517 B IT1094517 B IT 1094517B IT 22788/78 A IT22788/78 A IT 22788/78A IT 2278878 A IT2278878 A IT 2278878A IT 1094517 B IT1094517 B IT 1094517B
Authority
IT
Italy
Prior art keywords
filiform
procedure
manufacture
integrated circuit
resistive element
Prior art date
Application number
IT22788/78A
Other languages
English (en)
Other versions
IT7822788A0 (it
Inventor
Vincenzo Daniele
Giuseppe Corda
Andrea Ravaglia
Giuseppe Ferla
Original Assignee
Componenti Elettronici Sgs Ate
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Componenti Elettronici Sgs Ate filed Critical Componenti Elettronici Sgs Ate
Priority to IT22788/78A priority Critical patent/IT1094517B/it
Publication of IT7822788A0 publication Critical patent/IT7822788A0/it
Priority to JP54049867A priority patent/JPS6057228B2/ja
Priority to DE2916732A priority patent/DE2916732C2/de
Priority to FR7910763A priority patent/FR2424629A1/fr
Priority to US06/034,204 priority patent/US4310571A/en
Priority to GB7914821A priority patent/GB2020098B/en
Priority to US06/177,595 priority patent/US4315239A/en
Application granted granted Critical
Publication of IT1094517B publication Critical patent/IT1094517B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49099—Coating resistive material on a base

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Element Separation (AREA)
IT22788/78A 1978-04-28 1978-04-28 Procedimento per la fabbricazione di un elemento resistivo filiforme per circuito integrato IT1094517B (it)

Priority Applications (7)

Application Number Priority Date Filing Date Title
IT22788/78A IT1094517B (it) 1978-04-28 1978-04-28 Procedimento per la fabbricazione di un elemento resistivo filiforme per circuito integrato
JP54049867A JPS6057228B2 (ja) 1978-04-28 1979-04-24 抵抗性素子の製造方法
DE2916732A DE2916732C2 (de) 1978-04-28 1979-04-25 Verfahren zum Herstellen von integrierten Halbleiterschaltungsanordnungen, bei dem Widerstandselemente gebildet werden
FR7910763A FR2424629A1 (fr) 1978-04-28 1979-04-27 Processus de fabrication d'elements resistants pour circuits integres
US06/034,204 US4310571A (en) 1978-04-28 1979-04-27 Process for producing a calibrated resistance element
GB7914821A GB2020098B (en) 1978-04-28 1979-04-27 Method of manufacturing a filiform resistive component foran integrated circuit
US06/177,595 US4315239A (en) 1978-04-28 1980-08-13 Process for producing a calibrated resistance element and integrated circuitry incorporating same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT22788/78A IT1094517B (it) 1978-04-28 1978-04-28 Procedimento per la fabbricazione di un elemento resistivo filiforme per circuito integrato

Publications (2)

Publication Number Publication Date
IT7822788A0 IT7822788A0 (it) 1978-04-28
IT1094517B true IT1094517B (it) 1985-08-02

Family

ID=11200449

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22788/78A IT1094517B (it) 1978-04-28 1978-04-28 Procedimento per la fabbricazione di un elemento resistivo filiforme per circuito integrato

Country Status (6)

Country Link
US (2) US4310571A (it)
JP (1) JPS6057228B2 (it)
DE (1) DE2916732C2 (it)
FR (1) FR2424629A1 (it)
GB (1) GB2020098B (it)
IT (1) IT1094517B (it)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5866350A (ja) * 1981-10-14 1983-04-20 Mitsubishi Electric Corp 半導体素子の製造方法
EP0084178B1 (en) * 1982-01-14 1988-06-08 Kabushiki Kaisha Toshiba Resistive element formed in a semiconductor substrate
US4690833A (en) * 1986-03-28 1987-09-01 International Business Machines Corporation Providing circuit lines on a substrate
KR920004957B1 (ko) * 1988-11-12 1992-06-22 현대 전자산업 주식회사 산화물 측면벽의 폴리실리콘 스페이서를 이용한 고저항 부하 제조방법
US5108819A (en) * 1990-02-14 1992-04-28 Eli Lilly And Company Thin film electrical component
US5151376A (en) * 1990-05-31 1992-09-29 Sgs-Thomson Microelectronics, Inc. Method of making polycrystalline silicon resistors for integrated circuits
US5118382A (en) * 1990-08-10 1992-06-02 Ibm Corporation Elimination of etch stop undercut
US5065132A (en) * 1990-11-16 1991-11-12 Texas Instruments Incorporated Programmable resistor and an array of the same
US5244836A (en) * 1991-12-30 1993-09-14 North American Philips Corporation Method of manufacturing fusible links in semiconductor devices
US6100787A (en) * 1997-05-28 2000-08-08 Motorola, Inc. Multilayer ceramic package with low-variance embedded resistors

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH529446A (de) * 1971-08-19 1972-10-15 Ibm Selbstausrichtendes Maskierverfahren, insbesondere für Halbleiteroberflächen
US3837907A (en) * 1972-03-22 1974-09-24 Bell Telephone Labor Inc Multiple-level metallization for integrated circuits
JPS5513426B2 (it) * 1974-06-18 1980-04-09
US4057894A (en) * 1976-02-09 1977-11-15 Rca Corporation Controllably valued resistor
US4042950A (en) * 1976-03-01 1977-08-16 Advanced Micro Devices, Inc. Platinum silicide fuse links for integrated circuit devices
US4214917A (en) * 1978-02-10 1980-07-29 Emm Semi Process of forming a semiconductor memory cell with continuous polysilicon run circuit elements
US4228451A (en) * 1978-07-21 1980-10-14 Monolithic Memories, Inc. High resistivity semiconductor resistor device
US4198744A (en) * 1978-08-16 1980-04-22 Harris Corporation Process for fabrication of fuse and interconnects
US4225877A (en) * 1978-09-05 1980-09-30 Sprague Electric Company Integrated circuit with C-Mos logic, and a bipolar driver with polysilicon resistors

Also Published As

Publication number Publication date
DE2916732A1 (de) 1979-11-08
US4315239A (en) 1982-02-09
GB2020098B (en) 1982-09-02
JPS54158655A (en) 1979-12-14
FR2424629A1 (fr) 1979-11-23
FR2424629B1 (it) 1984-06-01
GB2020098A (en) 1979-11-07
JPS6057228B2 (ja) 1985-12-13
US4310571A (en) 1982-01-12
IT7822788A0 (it) 1978-04-28
DE2916732C2 (de) 1986-05-07

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970329