DE69017953T2 - Mehrstufen-Boosterschaltkreis mit wirksamem Ladungstransfer zwischen aufeinanderfolgenden Stufen. - Google Patents

Mehrstufen-Boosterschaltkreis mit wirksamem Ladungstransfer zwischen aufeinanderfolgenden Stufen.

Info

Publication number
DE69017953T2
DE69017953T2 DE69017953T DE69017953T DE69017953T2 DE 69017953 T2 DE69017953 T2 DE 69017953T2 DE 69017953 T DE69017953 T DE 69017953T DE 69017953 T DE69017953 T DE 69017953T DE 69017953 T2 DE69017953 T2 DE 69017953T2
Authority
DE
Germany
Prior art keywords
charge transfer
booster circuit
successive stages
effective charge
stage booster
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69017953T
Other languages
English (en)
Other versions
DE69017953D1 (de
Inventor
Yasuhito Miho Ichimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69017953D1 publication Critical patent/DE69017953D1/de
Publication of DE69017953T2 publication Critical patent/DE69017953T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/14Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073Charge pumps of the Schenkel-type
DE69017953T 1989-06-09 1990-05-23 Mehrstufen-Boosterschaltkreis mit wirksamem Ladungstransfer zwischen aufeinanderfolgenden Stufen. Expired - Lifetime DE69017953T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14749389A JP2805210B2 (ja) 1989-06-09 1989-06-09 昇圧回路

Publications (2)

Publication Number Publication Date
DE69017953D1 DE69017953D1 (de) 1995-04-27
DE69017953T2 true DE69017953T2 (de) 1995-08-03

Family

ID=15431637

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69017953T Expired - Lifetime DE69017953T2 (de) 1989-06-09 1990-05-23 Mehrstufen-Boosterschaltkreis mit wirksamem Ladungstransfer zwischen aufeinanderfolgenden Stufen.

Country Status (4)

Country Link
US (1) US5140182A (de)
EP (1) EP0403823B1 (de)
JP (1) JP2805210B2 (de)
DE (1) DE69017953T2 (de)

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US6373324B2 (en) * 1998-08-21 2002-04-16 Intel Corporation Voltage blocking method and apparatus for a charge pump with diode connected pull-up and pull-down on boot nodes
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JP3150127B2 (ja) * 1999-02-15 2001-03-26 日本電気株式会社 昇圧回路
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JP2001145335A (ja) * 1999-11-11 2001-05-25 Nec Corp 昇圧回路
DE60027706T2 (de) * 2000-02-15 2007-04-26 Stmicroelectronics S.R.L., Agrate Brianza Ladungspumpenschaltung und Spannungserhöhungsanordnung mit Übertragung und Gewinnung der Ladung
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JP4562478B2 (ja) * 2004-09-29 2010-10-13 凸版印刷株式会社 4相クロック駆動チャージポンプ回路
KR100636508B1 (ko) * 2004-11-11 2006-10-18 삼성에스디아이 주식회사 차지펌프 회로와 이를 이용한 직류 변환장치
KR100640615B1 (ko) * 2004-12-20 2006-11-01 삼성전자주식회사 고 전압 발생용 전하 펌프 회로
JP4849907B2 (ja) * 2006-02-22 2012-01-11 セイコーインスツル株式会社 チャージポンプ回路
FR2902398B1 (fr) * 2006-06-14 2008-08-22 Renault Sas Dispositif d'orientation de roues arriere
US7504876B1 (en) 2006-06-28 2009-03-17 Cypress Semiconductor Corporation Substrate bias feedback scheme to reduce chip leakage power
US8089822B1 (en) 2007-02-12 2012-01-03 Cypress Semiconductor Corporation On-chip power-measurement circuit using a low drop-out regulator
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US8040175B2 (en) * 2007-10-24 2011-10-18 Cypress Semiconductor Corporation Supply regulated charge pump system
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US8339183B2 (en) 2009-07-24 2012-12-25 Sandisk Technologies Inc. Charge pump with reduced energy consumption through charge sharing and clock boosting suitable for high voltage word line in flash memories
US8274322B2 (en) * 2010-10-18 2012-09-25 National Tsing Hua University Charge pump with low noise and high output current and voltage
US8294509B2 (en) * 2010-12-20 2012-10-23 Sandisk Technologies Inc. Charge pump systems with reduction in inefficiencies due to charge sharing between capacitances
US8339185B2 (en) 2010-12-20 2012-12-25 Sandisk 3D Llc Charge pump system that dynamically selects number of active stages
US8699247B2 (en) 2011-09-09 2014-04-15 Sandisk Technologies Inc. Charge pump system dynamically reconfigurable for read and program
US8514628B2 (en) 2011-09-22 2013-08-20 Sandisk Technologies Inc. Dynamic switching approach to reduce area and power consumption of high voltage charge pumps
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US8710909B2 (en) 2012-09-14 2014-04-29 Sandisk Technologies Inc. Circuits for prevention of reverse leakage in Vth-cancellation charge pumps
US8836412B2 (en) 2013-02-11 2014-09-16 Sandisk 3D Llc Charge pump with a power-controlled clock buffer to reduce power consumption and output voltage ripple
US8981835B2 (en) 2013-06-18 2015-03-17 Sandisk Technologies Inc. Efficient voltage doubler
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US9083231B2 (en) 2013-09-30 2015-07-14 Sandisk Technologies Inc. Amplitude modulation for pass gate to improve charge pump efficiency
US9154027B2 (en) 2013-12-09 2015-10-06 Sandisk Technologies Inc. Dynamic load matching charge pump for reduced current consumption
US11611276B2 (en) * 2014-12-04 2023-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Charge pump circuit
US9917507B2 (en) 2015-05-28 2018-03-13 Sandisk Technologies Llc Dynamic clock period modulation scheme for variable charge pump load currents
US9647536B2 (en) 2015-07-28 2017-05-09 Sandisk Technologies Llc High voltage generation using low voltage devices
US9520776B1 (en) 2015-09-18 2016-12-13 Sandisk Technologies Llc Selective body bias for charge pump transfer switches
CN108063551A (zh) * 2017-12-28 2018-05-22 上海传英信息技术有限公司 触发电路及充电设备

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Also Published As

Publication number Publication date
EP0403823A1 (de) 1990-12-27
EP0403823B1 (de) 1995-03-22
JPH0315266A (ja) 1991-01-23
JP2805210B2 (ja) 1998-09-30
DE69017953D1 (de) 1995-04-27
US5140182A (en) 1992-08-18

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