DE3852320D1 - Ladungsübertragungsanordnung. - Google Patents
Ladungsübertragungsanordnung.Info
- Publication number
- DE3852320D1 DE3852320D1 DE3852320T DE3852320T DE3852320D1 DE 3852320 D1 DE3852320 D1 DE 3852320D1 DE 3852320 T DE3852320 T DE 3852320T DE 3852320 T DE3852320 T DE 3852320T DE 3852320 D1 DE3852320 D1 DE 3852320D1
- Authority
- DE
- Germany
- Prior art keywords
- charge transfer
- transfer arrangement
- arrangement
- charge
- transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/04—Shift registers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
- G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76816—Output structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12461187 | 1987-05-21 | ||
JP63030418A JPH0828499B2 (ja) | 1987-02-13 | 1988-02-12 | 電荷転送素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3852320D1 true DE3852320D1 (de) | 1995-01-12 |
DE3852320T2 DE3852320T2 (de) | 1995-04-06 |
Family
ID=26368756
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE88108156T Expired - Fee Related DE3884274T2 (de) | 1987-05-21 | 1988-05-20 | Ladungsübertragungsanordnung. |
DE3852320T Expired - Fee Related DE3852320T2 (de) | 1987-05-21 | 1988-05-20 | Ladungsübertragungsanordnung. |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE88108156T Expired - Fee Related DE3884274T2 (de) | 1987-05-21 | 1988-05-20 | Ladungsübertragungsanordnung. |
Country Status (3)
Country | Link |
---|---|
US (1) | US4996686A (de) |
EP (2) | EP0292895B1 (de) |
DE (2) | DE3884274T2 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0338067A (ja) * | 1989-07-05 | 1991-02-19 | Toshiba Corp | 不揮発性半導体メモリ装置 |
JP2707784B2 (ja) * | 1990-03-10 | 1998-02-04 | 日本電気株式会社 | 電荷転送装置 |
JP2575964B2 (ja) * | 1991-03-27 | 1997-01-29 | 株式会社東芝 | 固体撮像装置 |
US5338946A (en) * | 1993-01-08 | 1994-08-16 | Eastman Kodak Company | Solid state image sensor with fast reset |
JPH08335122A (ja) * | 1995-04-05 | 1996-12-17 | Seiko Instr Inc | 基準電圧用半導体装置 |
JP3310164B2 (ja) * | 1996-05-30 | 2002-07-29 | 株式会社東芝 | 固体撮像装置 |
TW504887B (en) | 1998-10-20 | 2002-10-01 | Hitachi Eng Co Ltd | Voltage booster circuit apparatus and control method therefor |
JP2002041159A (ja) * | 2000-07-25 | 2002-02-08 | Nec Yamagata Ltd | 半導体集積回路装置 |
US7053945B1 (en) * | 2000-07-26 | 2006-05-30 | Micron Technolopgy, Inc. | Image sensor having boosted reset |
JP2002140124A (ja) * | 2000-10-30 | 2002-05-17 | Seiko Epson Corp | 基準電圧回路 |
JP5078502B2 (ja) * | 2007-08-16 | 2012-11-21 | セイコーインスツル株式会社 | 基準電圧回路 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5846178B2 (ja) * | 1980-12-03 | 1983-10-14 | 富士通株式会社 | 半導体装置 |
DE3108726A1 (de) * | 1981-03-07 | 1982-09-16 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Monolithisch integrierte referenzspannungsquelle |
JPS59963A (ja) * | 1982-06-28 | 1984-01-06 | Hitachi Ltd | 電荷転送装置 |
JPS5911680A (ja) * | 1982-07-12 | 1984-01-21 | Hitachi Ltd | 電荷転送装置 |
US4636664A (en) * | 1983-01-10 | 1987-01-13 | Ncr Corporation | Current sinking responsive MOS sense amplifier |
JPS59229834A (ja) * | 1983-06-13 | 1984-12-24 | Hitachi Ltd | 電荷転送装置 |
JPS6091671A (ja) * | 1983-10-26 | 1985-05-23 | Hitachi Ltd | 電荷結合装置 |
JPS61131854U (de) * | 1985-02-06 | 1986-08-18 | ||
JPS61187368A (ja) * | 1985-02-15 | 1986-08-21 | Toshiba Corp | 電荷転送装置 |
NL8500863A (nl) * | 1985-03-25 | 1986-10-16 | Philips Nv | Ladingsoverdrachtinrichting. |
EP0218747B1 (de) * | 1985-10-15 | 1991-05-08 | International Business Machines Corporation | Leseverstärker zur Verstärkung von Signalen auf einer vorgespannten Leitung |
JPS62230052A (ja) * | 1986-03-31 | 1987-10-08 | Toshiba Corp | 電荷転送装置 |
JPH0728029B2 (ja) * | 1987-05-21 | 1995-03-29 | 株式会社東芝 | 電荷転送素子 |
-
1988
- 1988-05-20 EP EP88108156A patent/EP0292895B1/de not_active Expired - Lifetime
- 1988-05-20 EP EP91120975A patent/EP0481531B1/de not_active Expired - Lifetime
- 1988-05-20 US US07/196,532 patent/US4996686A/en not_active Expired - Fee Related
- 1988-05-20 DE DE88108156T patent/DE3884274T2/de not_active Expired - Fee Related
- 1988-05-20 DE DE3852320T patent/DE3852320T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE3852320T2 (de) | 1995-04-06 |
EP0481531A3 (en) | 1992-09-30 |
EP0292895A3 (en) | 1989-11-23 |
EP0481531B1 (de) | 1994-11-30 |
EP0292895B1 (de) | 1993-09-22 |
US4996686A (en) | 1991-02-26 |
DE3884274D1 (de) | 1993-10-28 |
DE3884274T2 (de) | 1994-01-13 |
EP0292895A2 (de) | 1988-11-30 |
EP0481531A2 (de) | 1992-04-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |