DE68926098T2 - Mit einer Schottky-Sperrschicht versehene, bipolare Halbleiteranordnung mit isolierter Steuerelektrode und Verfahren zu deren Herstellung - Google Patents

Mit einer Schottky-Sperrschicht versehene, bipolare Halbleiteranordnung mit isolierter Steuerelektrode und Verfahren zu deren Herstellung

Info

Publication number
DE68926098T2
DE68926098T2 DE68926098T DE68926098T DE68926098T2 DE 68926098 T2 DE68926098 T2 DE 68926098T2 DE 68926098 T DE68926098 T DE 68926098T DE 68926098 T DE68926098 T DE 68926098T DE 68926098 T2 DE68926098 T2 DE 68926098T2
Authority
DE
Germany
Prior art keywords
making
semiconductor device
barrier layer
same
control electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68926098T
Other languages
English (en)
Other versions
DE68926098D1 (de
Inventor
Hiroyasu C O Mitsubishi Hagino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE68926098D1 publication Critical patent/DE68926098D1/de
Application granted granted Critical
Publication of DE68926098T2 publication Critical patent/DE68926098T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7839—Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE68926098T 1988-11-07 1989-11-07 Mit einer Schottky-Sperrschicht versehene, bipolare Halbleiteranordnung mit isolierter Steuerelektrode und Verfahren zu deren Herstellung Expired - Fee Related DE68926098T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63280608A JPH0828506B2 (ja) 1988-11-07 1988-11-07 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE68926098D1 DE68926098D1 (de) 1996-05-02
DE68926098T2 true DE68926098T2 (de) 1996-11-28

Family

ID=17627408

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68926098T Expired - Fee Related DE68926098T2 (de) 1988-11-07 1989-11-07 Mit einer Schottky-Sperrschicht versehene, bipolare Halbleiteranordnung mit isolierter Steuerelektrode und Verfahren zu deren Herstellung

Country Status (4)

Country Link
US (1) US5086324A (de)
EP (2) EP0683530A2 (de)
JP (1) JPH0828506B2 (de)
DE (1) DE68926098T2 (de)

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US7400017B2 (en) 2004-04-28 2008-07-15 Mitsubishi Denki Kabushiki Kaisha Reverse conducting semiconductor device and a fabrication method thereof
US9679892B2 (en) 2013-01-31 2017-06-13 Infineon Technologies Ag Method of manufacturing a reverse blocking semiconductor device

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JP3182262B2 (ja) * 1993-07-12 2001-07-03 株式会社東芝 半導体装置
EP0670603B1 (de) * 1994-02-18 1999-01-13 Hitachi, Ltd. Halbleiterbauelement mit mindestens einem IGBT und einer Diode
JPH07235672A (ja) * 1994-02-21 1995-09-05 Mitsubishi Electric Corp 絶縁ゲート型半導体装置およびその製造方法
US5817546A (en) * 1994-06-23 1998-10-06 Stmicroelectronics S.R.L. Process of making a MOS-technology power device
DE69429913T2 (de) * 1994-06-23 2002-10-31 St Microelectronics Srl Verfahren zur Herstellung eines Leistungsbauteils in MOS-Technik
US6040599A (en) * 1996-03-12 2000-03-21 Mitsubishi Denki Kabushiki Kaisha Insulated trench semiconductor device with particular layer structure
US6323090B1 (en) 1999-06-09 2001-11-27 Ixys Corporation Semiconductor device with trenched substrate and method
US6274850B1 (en) 1999-07-27 2001-08-14 Henny Penny Corporation Apparatus and method for identifying subject medium within cooking device
US6734497B2 (en) 2001-02-02 2004-05-11 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor, semiconductor device, method of manufacturing insulated-gate bipolar transistor, and method of manufacturing semiconductor device
US7169634B2 (en) * 2003-01-15 2007-01-30 Advanced Power Technology, Inc. Design and fabrication of rugged FRED
WO2004066391A1 (ja) * 2003-01-20 2004-08-05 Mitsubishi Denki Kabushiki Kaisha 半導体装置
JP2005057235A (ja) 2003-07-24 2005-03-03 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ及びその製造方法、並びに、インバータ回路
US6959557B2 (en) * 2003-09-02 2005-11-01 Tecumseh Products Company Apparatus for the storage and controlled delivery of fluids
JP2006115557A (ja) * 2004-10-12 2006-04-27 Kayaba Ind Co Ltd スイッチング素子、モータ駆動回路および緩衝器
US7190581B1 (en) 2005-01-11 2007-03-13 Midwest Research Institute Low thermal resistance power module assembly
EP1906449A4 (de) 2005-07-08 2009-05-06 Panasonic Corp Halbleitereinrichtung und elektrische einrichtung
JP4185157B2 (ja) * 2005-07-25 2008-11-26 松下電器産業株式会社 半導体素子及び電気機器
EP1909326A4 (de) * 2005-07-26 2009-05-06 Panasonic Corp Halbleiterelement und elektrische einrichtung
JP2007103770A (ja) * 2005-10-06 2007-04-19 Sanken Electric Co Ltd 絶縁ゲート型バイポーラトランジスタ
JP2008192737A (ja) * 2007-02-02 2008-08-21 Denso Corp 半導体装置
JP4788734B2 (ja) * 2008-05-09 2011-10-05 トヨタ自動車株式会社 半導体装置
JP4937213B2 (ja) * 2008-08-26 2012-05-23 三菱電機株式会社 電力用半導体装置
EP2184781A1 (de) * 2008-11-05 2010-05-12 ABB Technology AG Rückwärtsleitende Halbleitervorrichtung
EP2249392B1 (de) 2009-04-29 2020-05-20 ABB Power Grids Switzerland AG Rückwärtsleitende Halbleitervorrichtung
JP2011023527A (ja) * 2009-07-15 2011-02-03 Toshiba Corp 半導体装置
CN102422416B (zh) 2009-09-07 2014-05-14 丰田自动车株式会社 具备具有二极管区和igbt区的半导体基板的半导体装置
CN102396056B (zh) * 2009-12-15 2014-03-12 丰田自动车株式会社 半导体装置的制造方法
JP2012186206A (ja) * 2011-03-03 2012-09-27 Mitsubishi Electric Corp 半導体装置
DE112013002538T8 (de) * 2012-05-15 2015-04-30 Fuji Electric Co., Ltd. Halbleiterbauelement
JP5645899B2 (ja) * 2012-10-10 2014-12-24 三菱電機株式会社 半導体装置およびその製造方法
US10164083B2 (en) 2015-01-07 2018-12-25 Mitsubishi Electric Corporation Silicon carbide semiconductor device and manufacturing method therefor
US9966491B2 (en) * 2015-02-20 2018-05-08 University Of South Carolina Optically switched graphene/4H-SiC junction bipolar transistor
JP7204544B2 (ja) * 2019-03-14 2023-01-16 株式会社東芝 半導体装置
CN112687743B (zh) * 2020-12-29 2022-05-17 电子科技大学 沟槽型碳化硅逆阻mosfet器件及其制备方法
CN112687744B (zh) * 2020-12-29 2022-05-24 电子科技大学 平面型碳化硅逆阻mosfet器件及其制备方法
CN113270476A (zh) * 2021-04-08 2021-08-17 西安电子科技大学 具有电子控制栅极区和肖特基阳极的横向绝缘栅双极型晶体管及其制作方法

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7400017B2 (en) 2004-04-28 2008-07-15 Mitsubishi Denki Kabushiki Kaisha Reverse conducting semiconductor device and a fabrication method thereof
DE102005018366B4 (de) * 2004-04-28 2010-12-23 Mitsubishi Denki K.K. Rückwärtsleitende Halbleitervorrichtung
US9679892B2 (en) 2013-01-31 2017-06-13 Infineon Technologies Ag Method of manufacturing a reverse blocking semiconductor device
DE102014101130B4 (de) * 2013-01-31 2020-03-12 Infineon Technologies Ag Rückwärts sperrende Halbleitervorrichtung, Halbleitervorrichtung mit lokaler Emittereffizienzmodifikation und Methode zur Herstellung einer rückwärtssperrenden Halbleitervorrichtung

Also Published As

Publication number Publication date
EP0368246B1 (de) 1996-03-27
DE68926098D1 (de) 1996-05-02
EP0368246A3 (de) 1991-03-13
EP0683530A2 (de) 1995-11-22
EP0368246A2 (de) 1990-05-16
JPH0828506B2 (ja) 1996-03-21
EP0683530A3 (de) 1996-01-03
US5086324A (en) 1992-02-04
JPH02126682A (ja) 1990-05-15

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