DE602005001653D1 - Betriebsverfahren mit ladungsausgleichendem Löschen für einen nichtflüchtigen Speicher mit Ladungshaftstellen - Google Patents
Betriebsverfahren mit ladungsausgleichendem Löschen für einen nichtflüchtigen Speicher mit LadungshaftstellenInfo
- Publication number
- DE602005001653D1 DE602005001653D1 DE602005001653T DE602005001653T DE602005001653D1 DE 602005001653 D1 DE602005001653 D1 DE 602005001653D1 DE 602005001653 T DE602005001653 T DE 602005001653T DE 602005001653 T DE602005001653 T DE 602005001653T DE 602005001653 D1 DE602005001653 D1 DE 602005001653D1
- Authority
- DE
- Germany
- Prior art keywords
- charge
- arrest
- volatile memory
- operation procedure
- discharge operation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
- G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US56537704P | 2004-04-26 | 2004-04-26 | |
US565377P | 2004-04-26 | ||
US56666904P | 2004-04-30 | 2004-04-30 | |
US566669P | 2004-04-30 | ||
US876377 | 2004-06-24 | ||
US10/876,377 US7075828B2 (en) | 2004-04-26 | 2004-06-24 | Operation scheme with charge balancing erase for charge trapping non-volatile memory |
Publications (2)
Publication Number | Publication Date |
---|---|
DE602005001653D1 true DE602005001653D1 (de) | 2007-08-30 |
DE602005001653T2 DE602005001653T2 (de) | 2008-06-05 |
Family
ID=34933979
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005001653T Active DE602005001653T2 (de) | 2004-04-26 | 2005-02-28 | Betriebsverfahren mit ladungsausgleichendem Löschen für einen nichtflüchtigen Speicher mit Ladungshaftstellen |
Country Status (5)
Country | Link |
---|---|
US (1) | US7075828B2 (de) |
EP (1) | EP1592024B1 (de) |
JP (1) | JP5049470B2 (de) |
DE (1) | DE602005001653T2 (de) |
TW (1) | TWI266321B (de) |
Families Citing this family (74)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7151692B2 (en) * | 2004-01-27 | 2006-12-19 | Macronix International Co., Ltd. | Operation scheme for programming charge trapping non-volatile memory |
US7133313B2 (en) * | 2004-04-26 | 2006-11-07 | Macronix International Co., Ltd. | Operation scheme with charge balancing for charge trapping non-volatile memory |
US7164603B2 (en) * | 2004-04-26 | 2007-01-16 | Yen-Hao Shih | Operation scheme with high work function gate and charge balancing for charge trapping non-volatile memory |
US7209390B2 (en) * | 2004-04-26 | 2007-04-24 | Macronix International Co., Ltd. | Operation scheme for spectrum shift in charge trapping non-volatile memory |
US7190614B2 (en) * | 2004-06-17 | 2007-03-13 | Macronix International Co., Ltd. | Operation scheme for programming charge trapping non-volatile memory |
US7274601B2 (en) * | 2004-09-27 | 2007-09-25 | Macronix International Co., Ltd. | Programming and erasing method for charge-trapping memory devices |
US20060113586A1 (en) * | 2004-11-29 | 2006-06-01 | Macronix International Co., Ltd. | Charge trapping dielectric structure for non-volatile memory |
US7315474B2 (en) * | 2005-01-03 | 2008-01-01 | Macronix International Co., Ltd | Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays |
US8482052B2 (en) | 2005-01-03 | 2013-07-09 | Macronix International Co., Ltd. | Silicon on insulator and thin film transistor bandgap engineered split gate memory |
US7709334B2 (en) * | 2005-12-09 | 2010-05-04 | Macronix International Co., Ltd. | Stacked non-volatile memory device and methods for fabricating the same |
US7642585B2 (en) * | 2005-01-03 | 2010-01-05 | Macronix International Co., Ltd. | Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays |
US8264028B2 (en) * | 2005-01-03 | 2012-09-11 | Macronix International Co., Ltd. | Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays |
US7473589B2 (en) | 2005-12-09 | 2009-01-06 | Macronix International Co., Ltd. | Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same |
US7158420B2 (en) * | 2005-04-29 | 2007-01-02 | Macronix International Co., Ltd. | Inversion bit line, charge trapping non-volatile memory and method of operating same |
EP1732081B1 (de) * | 2005-06-03 | 2010-03-10 | Imec | Verfahren zur Steuerung einen nichtflüchtigen Ladungshaftstellen-Speicheranordnungen und Verfahren zur Bestimmung der Programmier-/Löschparameter |
ATE409350T1 (de) | 2005-06-03 | 2008-10-15 | Imec Inter Uni Micro Electr | Extraktionsverfahren für die lastverteilung in einem halbleiterbauelement |
US7636257B2 (en) * | 2005-06-10 | 2009-12-22 | Macronix International Co., Ltd. | Methods of operating p-channel non-volatile memory devices |
US7576386B2 (en) | 2005-08-04 | 2009-08-18 | Macronix International Co., Ltd. | Non-volatile memory semiconductor device having an oxide-nitride-oxide (ONO) top dielectric layer |
US7763927B2 (en) | 2005-12-15 | 2010-07-27 | Macronix International Co., Ltd. | Non-volatile memory device having a nitride-oxide dielectric layer |
US7224619B2 (en) * | 2005-09-09 | 2007-05-29 | Macronix International Co., Ltd. | Method and apparatus for protection from over-erasing nonvolatile memory cells |
US7242622B2 (en) * | 2005-12-06 | 2007-07-10 | Macronix International Co., Ltd. | Methods to resolve hard-to-erase condition in charge trapping non-volatile memory |
JP4965878B2 (ja) * | 2006-03-24 | 2012-07-04 | 株式会社東芝 | 不揮発性半導体メモリ装置 |
US20070231991A1 (en) * | 2006-03-31 | 2007-10-04 | Josef Willer | Semiconductor memory device and method of operating a semiconductor memory device |
US7391652B2 (en) * | 2006-05-05 | 2008-06-24 | Macronix International Co., Ltd. | Method of programming and erasing a p-channel BE-SONOS NAND flash memory |
US7907450B2 (en) | 2006-05-08 | 2011-03-15 | Macronix International Co., Ltd. | Methods and apparatus for implementing bit-by-bit erase of a flash memory device |
US7414889B2 (en) * | 2006-05-23 | 2008-08-19 | Macronix International Co., Ltd. | Structure and method of sub-gate and architectures employing bandgap engineered SONOS devices |
US7948799B2 (en) | 2006-05-23 | 2011-05-24 | Macronix International Co., Ltd. | Structure and method of sub-gate NAND memory with bandgap engineered SONOS devices |
TWI300931B (en) * | 2006-06-20 | 2008-09-11 | Macronix Int Co Ltd | Method of operating non-volatile memory device |
US7471568B2 (en) * | 2006-06-21 | 2008-12-30 | Macronix International Co., Ltd. | Multi-level cell memory structures with enlarged second bit operation window |
US7746694B2 (en) * | 2006-07-10 | 2010-06-29 | Macronix International Co., Ltd. | Nonvolatile memory array having modified channel region interface |
US7772068B2 (en) | 2006-08-30 | 2010-08-10 | Macronix International Co., Ltd. | Method of manufacturing non-volatile memory |
US7423912B2 (en) * | 2006-09-19 | 2008-09-09 | Atmel Corporation | SONOS memory array with improved read disturb characteristic |
US8772858B2 (en) | 2006-10-11 | 2014-07-08 | Macronix International Co., Ltd. | Vertical channel memory and manufacturing method thereof and operating method using the same |
US7811890B2 (en) | 2006-10-11 | 2010-10-12 | Macronix International Co., Ltd. | Vertical channel transistor structure and manufacturing method thereof |
US7851848B2 (en) | 2006-11-01 | 2010-12-14 | Macronix International Co., Ltd. | Cylindrical channel charge trapping devices with effectively high coupling ratios |
US8101989B2 (en) * | 2006-11-20 | 2012-01-24 | Macronix International Co., Ltd. | Charge trapping devices with field distribution layer over tunneling barrier |
US7561471B2 (en) * | 2006-12-26 | 2009-07-14 | Spansion Llc | Cycling improvement using higher erase bias |
US8223540B2 (en) | 2007-02-02 | 2012-07-17 | Macronix International Co., Ltd. | Method and apparatus for double-sided biasing of nonvolatile memory |
JP2008270343A (ja) * | 2007-04-17 | 2008-11-06 | Renesas Technology Corp | 不揮発性半導体記憶装置 |
KR100921506B1 (ko) * | 2007-04-24 | 2009-10-13 | 한양대학교 산학협력단 | 표시 장치 및 그 구동 방법 |
US20080291732A1 (en) * | 2007-05-25 | 2008-11-27 | Cypress Semiconductor Corporation | Three cycle SONOS programming |
US7838923B2 (en) * | 2007-08-09 | 2010-11-23 | Macronix International Co., Ltd. | Lateral pocket implant charge trapping devices |
US20090039414A1 (en) | 2007-08-09 | 2009-02-12 | Macronix International Co., Ltd. | Charge trapping memory cell with high speed erase |
EP2026384A3 (de) | 2007-08-13 | 2009-06-10 | Macronix International Co., Ltd. | Ladungsabfangende Speicherzelle mit Hochgeschwindigkeitslöschung |
US7816727B2 (en) * | 2007-08-27 | 2010-10-19 | Macronix International Co., Ltd. | High-κ capped blocking dielectric bandgap engineered SONOS and MONOS |
US7859904B1 (en) * | 2007-09-20 | 2010-12-28 | Cypress Semiconductor Corporation | Three cycle memory programming |
US7706180B2 (en) * | 2007-09-25 | 2010-04-27 | Cypress Semiconductor Corporation | Method and apparatus for reduction of bit-line disturb and soft-erase in a trapped-charge memory |
US7643349B2 (en) * | 2007-10-18 | 2010-01-05 | Macronix International Co., Ltd. | Efficient erase algorithm for SONOS-type NAND flash |
US7848148B2 (en) * | 2007-10-18 | 2010-12-07 | Macronix International Co., Ltd. | One-transistor cell semiconductor on insulator random access memory |
JP5118946B2 (ja) * | 2007-11-20 | 2013-01-16 | シャープ株式会社 | 半導体装置およびその製造方法と、書込み駆動方法および消去駆動方法ならびに液晶表示装置 |
EP2063459A1 (de) * | 2007-11-22 | 2009-05-27 | Interuniversitair Microelektronica Centrum vzw | Interpoly-Dielektrikum für eine nichtflüchtige Speichervorrichtung mit metallischem oder p-dotierten Kontrollgate |
US8189397B2 (en) * | 2008-01-08 | 2012-05-29 | Spansion Israel Ltd | Retention in NVM with top or bottom injection |
US7826262B2 (en) * | 2008-01-10 | 2010-11-02 | Macronix International Co., Ltd | Operation method of nitride-based flash memory and method of reducing coupling interference |
US8068370B2 (en) * | 2008-04-18 | 2011-11-29 | Macronix International Co., Ltd. | Floating gate memory device with interpoly charge trapping structure |
US7986564B2 (en) * | 2008-09-19 | 2011-07-26 | Macronix International Co., Ltd. | High second bit operation window method for virtual ground array with two-bit memory cells |
US8081516B2 (en) * | 2009-01-02 | 2011-12-20 | Macronix International Co., Ltd. | Method and apparatus to suppress fringing field interference of charge trapping NAND memory |
JP2010182370A (ja) * | 2009-02-05 | 2010-08-19 | Seiko Epson Corp | 不揮発性メモリー装置および不揮発性メモリー装置の製造方法 |
US8861273B2 (en) * | 2009-04-21 | 2014-10-14 | Macronix International Co., Ltd. | Bandgap engineered charge trapping memory in two-transistor nor architecture |
TWI419167B (zh) * | 2009-06-17 | 2013-12-11 | Acer Inc | 抹除非揮發性記憶體之方法 |
WO2011024213A1 (ja) * | 2009-08-25 | 2011-03-03 | 株式会社 東芝 | 不揮発性半導体記憶装置 |
US8169835B2 (en) * | 2009-09-28 | 2012-05-01 | Macronix International Co., Ltd. | Charge trapping memory cell having bandgap engineered tunneling structure with oxynitride isolation layer |
CN102169724B (zh) * | 2010-02-26 | 2014-09-24 | 宏碁股份有限公司 | 存储器元件的操作方法 |
US9240405B2 (en) | 2011-04-19 | 2016-01-19 | Macronix International Co., Ltd. | Memory with off-chip controller |
US8462556B1 (en) * | 2011-12-15 | 2013-06-11 | Nanjing University | Method for operating a high density multi-level cell non-volatile flash memory device |
US10170187B2 (en) | 2012-04-02 | 2019-01-01 | Micron Technology, Inc. | Apparatuses and methods using negative voltages in part of memory write read, and erase operations |
US9171625B2 (en) | 2012-06-15 | 2015-10-27 | Micron Technology, Inc. | Apparatuses and methods to modify pillar potential |
US8987098B2 (en) | 2012-06-19 | 2015-03-24 | Macronix International Co., Ltd. | Damascene word line |
US8837192B2 (en) | 2012-10-19 | 2014-09-16 | Taiwan Semiconductor Manufacturing Company Limited | N-bit rom cell |
US9379126B2 (en) | 2013-03-14 | 2016-06-28 | Macronix International Co., Ltd. | Damascene conductor for a 3D device |
US9099538B2 (en) | 2013-09-17 | 2015-08-04 | Macronix International Co., Ltd. | Conductor with a plurality of vertical extensions for a 3D device |
US9559113B2 (en) | 2014-05-01 | 2017-01-31 | Macronix International Co., Ltd. | SSL/GSL gate oxide in 3D vertical channel NAND |
US9391084B2 (en) | 2014-06-19 | 2016-07-12 | Macronix International Co., Ltd. | Bandgap-engineered memory with multiple charge trapping layers storing charge |
US9324439B1 (en) | 2014-10-20 | 2016-04-26 | Sandisk Technologies Inc. | Weak erase after programming to improve data retention in charge-trapping memory |
CN112365913B (zh) * | 2020-09-29 | 2021-09-03 | 中天弘宇集成电路有限责任公司 | 3d nand闪存编程方法 |
Family Cites Families (93)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5448517A (en) * | 1987-06-29 | 1995-09-05 | Kabushiki Kaisha Toshiba | Electrically programmable nonvolatile semiconductor memory device with NAND cell structure |
US5270969A (en) * | 1987-06-29 | 1993-12-14 | Kabushiki Kaisha Toshiba | Electrically programmable nonvolatile semiconductor memory device with nand cell structure |
JP2685770B2 (ja) * | 1987-12-28 | 1997-12-03 | 株式会社東芝 | 不揮発性半導体記憶装置 |
USRE35838E (en) | 1987-12-28 | 1998-07-07 | Kabushiki Kaisha Toshiba | Electrically erasable programmable read-only memory with NAND cell structure |
US5355464A (en) * | 1991-02-11 | 1994-10-11 | Intel Corporation | Circuitry and method for suspending the automated erasure of a non-volatile semiconductor memory |
US5602789A (en) * | 1991-03-12 | 1997-02-11 | Kabushiki Kaisha Toshiba | Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller |
US5278439A (en) * | 1991-08-29 | 1994-01-11 | Ma Yueh Y | Self-aligned dual-bit split gate (DSG) flash EEPROM cell |
US5428568A (en) * | 1991-10-30 | 1995-06-27 | Mitsubishi Denki Kabushiki Kaisha | Electrically erasable and programmable non-volatile memory device and a method of operating the same |
US5644533A (en) * | 1992-11-02 | 1997-07-01 | Nvx Corporation | Flash memory system, and methods of constructing and utilizing same |
WO1994028551A1 (en) | 1993-05-28 | 1994-12-08 | Macronix International Co., Ltd. | Flash eprom with block erase flags for over-erase protection |
DE4422791C2 (de) | 1993-06-29 | 2001-11-29 | Toshiba Kawasaki Kk | Halbleitervorrichtungen mit einem eine Inversionsschicht in einem Oberflächenbereich eines Halbleitersubstrats induzierenden leitenden Film |
US5509134A (en) * | 1993-06-30 | 1996-04-16 | Intel Corporation | Method and apparatus for execution of operations in a flash memory array |
JP3512833B2 (ja) * | 1993-09-17 | 2004-03-31 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP2725575B2 (ja) * | 1993-10-28 | 1998-03-11 | 日本電気株式会社 | 不揮発性半導体記憶装置とその書き込み特性回復方法 |
US5408115A (en) * | 1994-04-04 | 1995-04-18 | Motorola Inc. | Self-aligned, split-gate EEPROM device |
US5387534A (en) * | 1994-05-05 | 1995-02-07 | Micron Semiconductor, Inc. | Method of forming an array of non-volatile sonos memory cells and array of non-violatile sonos memory cells |
US5485422A (en) * | 1994-06-02 | 1996-01-16 | Intel Corporation | Drain bias multiplexing for multiple bit flash cell |
US5483486A (en) * | 1994-10-19 | 1996-01-09 | Intel Corporation | Charge pump circuit for providing multiple output voltages for flash memory |
US5694356A (en) | 1994-11-02 | 1997-12-02 | Invoice Technology, Inc. | High resolution analog storage EPROM and flash EPROM |
US5602775A (en) * | 1995-03-15 | 1997-02-11 | National Semiconductor Corporation | Flash EEPROM Memory system for low voltage operation and method |
JPH08329693A (ja) * | 1995-05-29 | 1996-12-13 | Hitachi Ltd | 半導体記憶装置、データ処理装置 |
US6034896A (en) * | 1995-07-03 | 2000-03-07 | The University Of Toronto, Innovations Foundation | Method of fabricating a fast programmable flash E2 PROM cell |
US5566120A (en) * | 1995-10-19 | 1996-10-15 | Sun Microsystems, Inc. | Apparatus and method for controlling transistor current leakage |
US5745410A (en) * | 1995-11-17 | 1998-04-28 | Macronix International Co., Ltd. | Method and system for soft programming algorithm |
JPH09162313A (ja) | 1995-12-12 | 1997-06-20 | Rohm Co Ltd | 不揮発性半導体記憶装置およびその使用方法 |
JP3976839B2 (ja) * | 1996-07-09 | 2007-09-19 | 株式会社ルネサステクノロジ | 不揮発性メモリシステムおよび不揮発性半導体メモリ |
US5768192A (en) * | 1996-07-23 | 1998-06-16 | Saifun Semiconductors, Ltd. | Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping |
WO1998010471A1 (en) * | 1996-09-05 | 1998-03-12 | Macronix International Co., Ltd. | Triple well floating gate memory and operating method with isolated channel program, preprogram and erase processes |
JP3895816B2 (ja) * | 1996-12-25 | 2007-03-22 | 株式会社東芝 | 不揮発性半導体記憶装置とその制御方法、メモリカード、及び記憶システム |
US6297096B1 (en) * | 1997-06-11 | 2001-10-02 | Saifun Semiconductors Ltd. | NROM fabrication method |
US5966603A (en) * | 1997-06-11 | 1999-10-12 | Saifun Semiconductors Ltd. | NROM fabrication method with a periphery portion |
IL125604A (en) * | 1997-07-30 | 2004-03-28 | Saifun Semiconductors Ltd | Non-volatile electrically erasable and programmble semiconductor memory cell utilizing asymmetrical charge |
US6768165B1 (en) * | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
JP3558510B2 (ja) * | 1997-10-30 | 2004-08-25 | シャープ株式会社 | 不揮発性半導体記憶装置 |
JPH11233653A (ja) | 1998-02-13 | 1999-08-27 | Sony Corp | 不揮発性半導体記憶装置の消去方法 |
TW365686B (en) * | 1998-02-16 | 1999-08-01 | Taiwan Semiconductor Mfg Co Ltd | Method of manufacture of fabricating flash memory split-gate |
US6587903B2 (en) * | 1998-02-27 | 2003-07-01 | Micron Technology, Inc. | Soft programming for recovery of overerasure |
US6614070B1 (en) * | 1998-04-16 | 2003-09-02 | Cypress Semiconductor Corporation | Semiconductor non-volatile memory device having a NAND cell structure |
US6194272B1 (en) * | 1998-05-19 | 2001-02-27 | Mosel Vitelic, Inc. | Split gate flash cell with extremely small cell size |
US6215148B1 (en) * | 1998-05-20 | 2001-04-10 | Saifun Semiconductors Ltd. | NROM cell with improved programming, erasing and cycling |
US6074917A (en) * | 1998-06-16 | 2000-06-13 | Advanced Micro Devices, Inc. | LPCVD oxide and RTA for top oxide of ONO film to improve reliability for flash memory devices |
US6075727A (en) * | 1998-07-29 | 2000-06-13 | Motorola, Inc | Method and apparatus for writing an erasable non-volatile memory |
JP3540640B2 (ja) * | 1998-12-22 | 2004-07-07 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US6445617B1 (en) * | 1999-02-19 | 2002-09-03 | Mitsubishi Denki Kabushiki Kaisha | Non-volatile semiconductor memory and methods of driving, operating, and manufacturing this memory |
US6496417B1 (en) * | 1999-06-08 | 2002-12-17 | Macronix International Co., Ltd. | Method and integrated circuit for bit line soft programming (BLISP) |
FI108979B (fi) * | 1999-06-14 | 2002-04-30 | Nokia Corp | Ohjaavan palvelun käynnistäminen |
JP2002026153A (ja) * | 2000-07-10 | 2002-01-25 | Toshiba Corp | 半導体メモリ |
JP4586219B2 (ja) * | 1999-09-17 | 2010-11-24 | ソニー株式会社 | 不揮発性半導体記憶装置の消去方法 |
US6172907B1 (en) * | 1999-10-22 | 2001-01-09 | Cypress Semiconductor Corporation | Silicon-oxide-nitride-oxide-semiconductor (SONOS) type memory cell and method for retaining data in the same |
JP2001195890A (ja) * | 2000-01-12 | 2001-07-19 | Sharp Corp | 不揮発性半導体メモリ装置の書込み方式および書込み回路 |
US6219276B1 (en) * | 2000-02-25 | 2001-04-17 | Advanced Micro Devices, Inc. | Multilevel cell programming |
US6396741B1 (en) | 2000-05-04 | 2002-05-28 | Saifun Semiconductors Ltd. | Programming of nonvolatile memory cells |
US6363013B1 (en) * | 2000-08-29 | 2002-03-26 | Macronix International Co., Ltd. | Auto-stopped page soft-programming method with voltage limited component |
TW490675B (en) * | 2000-12-22 | 2002-06-11 | Macronix Int Co Ltd | Control method of multi-stated NROM |
US6556481B1 (en) * | 2001-02-21 | 2003-04-29 | Aplus Flash Technology, Inc. | 3-step write operation nonvolatile semiconductor one-transistor, nor-type flash EEPROM memory cell |
US6538923B1 (en) * | 2001-02-26 | 2003-03-25 | Advanced Micro Devices, Inc. | Staircase program verify for multi-level cell flash memory designs |
US6487114B2 (en) * | 2001-02-28 | 2002-11-26 | Macronix International Co., Ltd. | Method of reading two-bit memories of NROM cell |
US6731544B2 (en) | 2001-05-14 | 2004-05-04 | Nexflash Technologies, Inc. | Method and apparatus for multiple byte or page mode programming of a flash memory array |
KR20020092114A (ko) * | 2001-06-02 | 2002-12-11 | 김대만 | 드레인 턴온 현상과 과잉 소거 현상을 제거한 sonos셀, 이를 포함하는 불휘발성 메모리 장치 및 그 제조방법 |
JP2002368144A (ja) * | 2001-06-13 | 2002-12-20 | Hitachi Ltd | 不揮発性半導体記憶装置およびその製造方法 |
US6436768B1 (en) * | 2001-06-27 | 2002-08-20 | Advanced Micro Devices, Inc. | Source drain implant during ONO formation for improved isolation of SONOS devices |
US6720614B2 (en) * | 2001-08-07 | 2004-04-13 | Macronix International Co., Ltd. | Operation method for programming and erasing a data in a P-channel sonos memory cell |
US6396740B1 (en) * | 2001-08-10 | 2002-05-28 | Taiwan Semiconductor Manufacturing Company, Ltd | Reference cell circuit for split gate flash memory |
US6670240B2 (en) * | 2001-08-13 | 2003-12-30 | Halo Lsi, Inc. | Twin NAND device structure, array operations and fabrication method |
JP2003068893A (ja) * | 2001-08-28 | 2003-03-07 | Hitachi Ltd | 不揮発性記憶素子及び半導体集積回路 |
US6714457B1 (en) * | 2001-09-19 | 2004-03-30 | Aplus Flash Technology, Inc. | Parallel channel programming scheme for MLC flash memory |
US6643181B2 (en) * | 2001-10-24 | 2003-11-04 | Saifun Semiconductors Ltd. | Method for erasing a memory cell |
TW503509B (en) * | 2001-10-29 | 2002-09-21 | Macronix Int Co Ltd | Manufacture method of substrate/oxide nitride/oxide/silicon device |
US6512696B1 (en) * | 2001-11-13 | 2003-01-28 | Macronix International Co., Ltd. | Method of programming and erasing a SNNNS type non-volatile memory cell |
JP2003174106A (ja) * | 2001-12-07 | 2003-06-20 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US6690601B2 (en) * | 2002-03-29 | 2004-02-10 | Macronix International Co., Ltd. | Nonvolatile semiconductor memory cell with electron-trapping erase state and methods for operating the same |
US6657894B2 (en) * | 2002-03-29 | 2003-12-02 | Macronix International Co., Ltd, | Apparatus and method for programming virtual ground nonvolatile memory cell array without disturbing adjacent cells |
US6614694B1 (en) * | 2002-04-02 | 2003-09-02 | Macronix International Co., Ltd. | Erase scheme for non-volatile memory |
JP4647175B2 (ja) * | 2002-04-18 | 2011-03-09 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
US6646924B1 (en) * | 2002-08-02 | 2003-11-11 | Macronix International Co, Ltd. | Non-volatile memory and operating method thereof |
US6643185B1 (en) * | 2002-08-07 | 2003-11-04 | Advanced Micro Devices, Inc. | Method for repairing over-erasure of fast bits on floating gate memory devices |
WO2004029984A2 (en) * | 2002-09-24 | 2004-04-08 | Sandisk Corporation | Non-volatile memory and its sensing method |
US6552386B1 (en) * | 2002-09-30 | 2003-04-22 | Silicon-Based Technology Corp. | Scalable split-gate flash memory cell structure and its contactless flash memory arrays |
JP2004152977A (ja) * | 2002-10-30 | 2004-05-27 | Renesas Technology Corp | 半導体記憶装置 |
US6836435B2 (en) * | 2002-12-13 | 2004-12-28 | Freescale Semiconductor, Inc. | Compaction scheme in NVM |
US7233522B2 (en) * | 2002-12-31 | 2007-06-19 | Sandisk 3D Llc | NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same |
US6912163B2 (en) * | 2003-01-14 | 2005-06-28 | Fasl, Llc | Memory device having high work function gate and method of erasing same |
US6721204B1 (en) * | 2003-06-17 | 2004-04-13 | Macronix International Co., Ltd. | Memory erase method and device with optimal data retention for nonvolatile memory |
US6979857B2 (en) * | 2003-07-01 | 2005-12-27 | Micron Technology, Inc. | Apparatus and method for split gate NROM memory |
US6937511B2 (en) * | 2004-01-27 | 2005-08-30 | Macronix International Co., Ltd. | Circuit and method for programming charge storage memory cells |
US7187590B2 (en) * | 2004-04-26 | 2007-03-06 | Macronix International Co., Ltd. | Method and system for self-convergent erase in charge trapping memory cells |
US7164603B2 (en) * | 2004-04-26 | 2007-01-16 | Yen-Hao Shih | Operation scheme with high work function gate and charge balancing for charge trapping non-volatile memory |
US7133313B2 (en) * | 2004-04-26 | 2006-11-07 | Macronix International Co., Ltd. | Operation scheme with charge balancing for charge trapping non-volatile memory |
US7209390B2 (en) * | 2004-04-26 | 2007-04-24 | Macronix International Co., Ltd. | Operation scheme for spectrum shift in charge trapping non-volatile memory |
US7187595B2 (en) * | 2004-06-08 | 2007-03-06 | Saifun Semiconductors Ltd. | Replenishment for internal voltage |
US6834012B1 (en) * | 2004-06-08 | 2004-12-21 | Advanced Micro Devices, Inc. | Memory device and methods of using negative gate stress to correct over-erased memory cells |
US7190614B2 (en) * | 2004-06-17 | 2007-03-13 | Macronix International Co., Ltd. | Operation scheme for programming charge trapping non-volatile memory |
US20060044934A1 (en) * | 2004-09-02 | 2006-03-02 | Micron Technology, Inc. | Cluster based non-volatile memory translation layer |
-
2004
- 2004-06-24 US US10/876,377 patent/US7075828B2/en active Active
-
2005
- 2005-02-28 DE DE602005001653T patent/DE602005001653T2/de active Active
- 2005-02-28 EP EP05004339A patent/EP1592024B1/de active Active
- 2005-04-22 TW TW094113024A patent/TWI266321B/zh active
- 2005-04-25 JP JP2005126923A patent/JP5049470B2/ja active Active
Also Published As
Publication number | Publication date |
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EP1592024A3 (de) | 2005-11-30 |
EP1592024A2 (de) | 2005-11-02 |
EP1592024B1 (de) | 2007-07-18 |
US20050237815A1 (en) | 2005-10-27 |
JP2005317965A (ja) | 2005-11-10 |
JP5049470B2 (ja) | 2012-10-17 |
US7075828B2 (en) | 2006-07-11 |
DE602005001653T2 (de) | 2008-06-05 |
TW200539186A (en) | 2005-12-01 |
TWI266321B (en) | 2006-11-11 |
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