DE602004022561D1 - Dram-steuerschaltungen mit niederspannungsbetrieb - Google Patents

Dram-steuerschaltungen mit niederspannungsbetrieb

Info

Publication number
DE602004022561D1
DE602004022561D1 DE602004022561T DE602004022561T DE602004022561D1 DE 602004022561 D1 DE602004022561 D1 DE 602004022561D1 DE 602004022561 T DE602004022561 T DE 602004022561T DE 602004022561 T DE602004022561 T DE 602004022561T DE 602004022561 D1 DE602004022561 D1 DE 602004022561D1
Authority
DE
Germany
Prior art keywords
sense
gate voltages
restore
complementary
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004022561T
Other languages
English (en)
Inventor
Myung Chan Choi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZMOS Technology Inc
Original Assignee
ZMOS Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ZMOS Technology Inc filed Critical ZMOS Technology Inc
Publication of DE602004022561D1 publication Critical patent/DE602004022561D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/08—Control thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/005—Transfer gates, i.e. gates coupling the sense amplifier output to data lines, I/O lines or global bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2227—Standby or low power modes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Vehicle Body Suspensions (AREA)
  • Logic Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
DE602004022561T 2003-09-05 2004-09-03 Dram-steuerschaltungen mit niederspannungsbetrieb Active DE602004022561D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US50066203P 2003-09-05 2003-09-05
PCT/US2004/029038 WO2005024834A2 (en) 2003-09-05 2004-09-03 Low voltage operation dram control circuits

Publications (1)

Publication Number Publication Date
DE602004022561D1 true DE602004022561D1 (de) 2009-09-24

Family

ID=34272981

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004022561T Active DE602004022561D1 (de) 2003-09-05 2004-09-03 Dram-steuerschaltungen mit niederspannungsbetrieb

Country Status (9)

Country Link
US (3) US7082048B2 (de)
EP (1) EP1661137B1 (de)
JP (1) JP2007504594A (de)
KR (1) KR20060119934A (de)
CN (1) CN1898744A (de)
AT (1) ATE439672T1 (de)
CA (1) CA2537632A1 (de)
DE (1) DE602004022561D1 (de)
WO (1) WO2005024834A2 (de)

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US7287171B1 (en) 2004-03-08 2007-10-23 Altera Corporation Systems and methods for reducing static and total power consumption in programmable logic device architectures
TW200721163A (en) * 2005-09-23 2007-06-01 Zmos Technology Inc Low power memory control circuits and methods
US7755964B2 (en) * 2006-10-25 2010-07-13 Qualcomm Incorporated Memory device with configurable delay tracking
KR100897282B1 (ko) * 2007-11-07 2009-05-14 주식회사 하이닉스반도체 리시버 회로
KR101096225B1 (ko) * 2008-08-21 2011-12-22 주식회사 하이닉스반도체 반도체 메모리 장치 및 그 구동방법
JP2012190522A (ja) 2011-03-14 2012-10-04 Elpida Memory Inc 半導体装置
TWI457575B (zh) * 2012-04-06 2014-10-21 Ind Tech Res Inst 具有自我測試的像素陣列模組及其自我測試方法
CN103077739B (zh) * 2012-12-31 2015-07-29 清华大学 一种冗余结构动态随机访问存储单元
US8896344B1 (en) 2013-01-04 2014-11-25 Altera Corporation Heterogeneous programmable device and configuration software adapted therefor
CN103531229A (zh) * 2013-10-18 2014-01-22 上海工程技术大学 一种静态随机存储器
KR20170013488A (ko) * 2015-07-27 2017-02-07 에스케이하이닉스 주식회사 반도체장치 및 반도체시스템
US10656995B2 (en) 2018-10-03 2020-05-19 Micron Technology, Inc. Copy-back operations in a memory device
KR102615012B1 (ko) 2018-11-12 2023-12-19 삼성전자주식회사 메모리 장치 및 그것의 동작 방법
CN114400999A (zh) * 2020-12-21 2022-04-26 台湾积体电路制造股份有限公司 电路及其操作方法

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JPS62252597A (ja) * 1986-04-24 1987-11-04 Sony Corp センスアンプ
JP2934448B2 (ja) * 1989-03-20 1999-08-16 株式会社日立製作所 半導体集積回路
US5187395A (en) * 1991-01-04 1993-02-16 Motorola, Inc. BIMOS voltage bias with low temperature coefficient
JP3306682B2 (ja) * 1993-08-18 2002-07-24 日本テキサス・インスツルメンツ株式会社 駆動回路
JP3667787B2 (ja) * 1994-05-11 2005-07-06 株式会社ルネサステクノロジ 半導体記憶装置
US5434822A (en) * 1994-07-07 1995-07-18 Intel Corporation Apparatus and method for adjusting and maintaining a bitline precharge level
JP3482020B2 (ja) * 1994-12-22 2003-12-22 松下電器産業株式会社 センスアンプ回路
TW306001B (de) * 1995-02-08 1997-05-21 Matsushita Electric Ind Co Ltd
JP3260583B2 (ja) * 1995-04-04 2002-02-25 株式会社東芝 ダイナミック型半導体メモリおよびそのテスト方法
US5627487A (en) * 1995-06-28 1997-05-06 Micron Technology, Inc. Charge conserving driver circuit for capacitive loads
US5640350A (en) * 1996-05-01 1997-06-17 Iga; Adam Sempa Multi-bit dynamic random access memory cell storage
JPH10241361A (ja) * 1997-02-25 1998-09-11 Toshiba Corp 半導体記憶装置
JP3742191B2 (ja) * 1997-06-06 2006-02-01 株式会社東芝 半導体集積回路装置
US6043682A (en) * 1997-12-23 2000-03-28 Intel Corporation Predriver logic circuit
JP3853513B2 (ja) * 1998-04-09 2006-12-06 エルピーダメモリ株式会社 ダイナミック型ｒａｍ
US6525896B2 (en) * 1998-05-14 2003-02-25 International Business Machines Corporation Method and circuitry for high voltage application with MOSFET technology
JPH11328955A (ja) * 1998-05-14 1999-11-30 Mitsubishi Electric Corp 半導体回路装置
JPH11345488A (ja) * 1998-06-01 1999-12-14 Hitachi Ltd 半導体記憶装置
US6573548B2 (en) 1998-08-14 2003-06-03 Monolithic System Technology, Inc. DRAM cell having a capacitor structure fabricated partially in a cavity and method for operating same
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KR100331550B1 (ko) * 1999-09-02 2002-04-06 윤종용 반도체 메모리장치의 감지증폭기
JP2002074950A (ja) * 2000-08-29 2002-03-15 Toshiba Corp 半導体集積回路
JP2002298579A (ja) * 2001-03-29 2002-10-11 Toshiba Corp 半導体記憶装置
US6545923B2 (en) * 2001-05-04 2003-04-08 Samsung Electronics Co., Ltd. Negatively biased word line scheme for a semiconductor memory device
JP4439167B2 (ja) 2002-08-30 2010-03-24 株式会社ルネサステクノロジ 半導体記憶装置
KR100568544B1 (ko) * 2004-09-20 2006-04-07 삼성전자주식회사 계층적 비트 라인 구조를 가지는 반도체 메모리 장치 및반도체 메모리 장치의 동작 방법

Also Published As

Publication number Publication date
US20060227593A1 (en) 2006-10-12
US7839701B2 (en) 2010-11-23
KR20060119934A (ko) 2006-11-24
US20080008018A1 (en) 2008-01-10
CA2537632A1 (en) 2005-03-17
WO2005024834A2 (en) 2005-03-17
US7324390B2 (en) 2008-01-29
US20050083769A1 (en) 2005-04-21
EP1661137A4 (de) 2007-05-30
ATE439672T1 (de) 2009-08-15
JP2007504594A (ja) 2007-03-01
EP1661137B1 (de) 2009-08-12
CN1898744A (zh) 2007-01-17
EP1661137A2 (de) 2006-05-31
US7082048B2 (en) 2006-07-25
WO2005024834A3 (en) 2005-12-15

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