DE60102891D1 - Vorrichtung und vefahren für das kontrollierte polieren und planarisieren von halbleiterschleifen - Google Patents

Vorrichtung und vefahren für das kontrollierte polieren und planarisieren von halbleiterschleifen

Info

Publication number
DE60102891D1
DE60102891D1 DE60102891T DE60102891T DE60102891D1 DE 60102891 D1 DE60102891 D1 DE 60102891D1 DE 60102891 T DE60102891 T DE 60102891T DE 60102891 T DE60102891 T DE 60102891T DE 60102891 D1 DE60102891 D1 DE 60102891D1
Authority
DE
Germany
Prior art keywords
planarization
controlled polishing
semiconductor grinding
grinding
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60102891T
Other languages
English (en)
Other versions
DE60102891T2 (de
Inventor
Rod Kistler
Yehiel Gotkis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of DE60102891D1 publication Critical patent/DE60102891D1/de
Application granted granted Critical
Publication of DE60102891T2 publication Critical patent/DE60102891T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B51/00—Arrangements for automatic control of a series of individual steps in grinding a workpiece

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
DE60102891T 2000-01-28 2001-01-12 Vorrichtung und vefahren für das kontrollierte polieren und planarisieren von halbleiterschleifen Expired - Fee Related DE60102891T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/493,978 US6340326B1 (en) 2000-01-28 2000-01-28 System and method for controlled polishing and planarization of semiconductor wafers
US493978 2000-01-28
PCT/US2001/001044 WO2001054862A1 (en) 2000-01-28 2001-01-12 System and method for controlled polishing and planarization of semiconductor wafers

Publications (2)

Publication Number Publication Date
DE60102891D1 true DE60102891D1 (de) 2004-05-27
DE60102891T2 DE60102891T2 (de) 2005-03-31

Family

ID=23962506

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60102891T Expired - Fee Related DE60102891T2 (de) 2000-01-28 2001-01-12 Vorrichtung und vefahren für das kontrollierte polieren und planarisieren von halbleiterschleifen

Country Status (8)

Country Link
US (2) US6340326B1 (de)
EP (1) EP1250215B1 (de)
JP (1) JP4831910B2 (de)
KR (1) KR100780977B1 (de)
AU (1) AU2001229403A1 (de)
DE (1) DE60102891T2 (de)
TW (1) TW471994B (de)
WO (1) WO2001054862A1 (de)

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JP2001138233A (ja) * 1999-11-19 2001-05-22 Sony Corp 研磨装置、研磨方法および研磨工具の洗浄方法
US6340326B1 (en) * 2000-01-28 2002-01-22 Lam Research Corporation System and method for controlled polishing and planarization of semiconductor wafers
US6705930B2 (en) * 2000-01-28 2004-03-16 Lam Research Corporation System and method for polishing and planarizing semiconductor wafers using reduced surface area polishing pads and variable partial pad-wafer overlapping techniques
US6585572B1 (en) * 2000-08-22 2003-07-01 Lam Research Corporation Subaperture chemical mechanical polishing system
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KR101042321B1 (ko) * 2009-08-18 2011-06-17 세메스 주식회사 기판 연마 장치 및 방법
KR101098367B1 (ko) 2009-08-28 2011-12-26 세메스 주식회사 기판 연마 장치 및 그의 처리 방법
DE102013221319A1 (de) 2013-10-21 2015-04-23 Volkswagen Aktiengesellschaft Automatischer Wechsel von Schleif-/Polierscheiben zur Behandlung von Karosseriebauteilen
US9700988B2 (en) * 2014-08-26 2017-07-11 Ebara Corporation Substrate processing apparatus
CN109155249B (zh) * 2016-03-25 2023-06-23 应用材料公司 局部区域研磨系统以及用于研磨系统的研磨垫组件
US10096460B2 (en) 2016-08-02 2018-10-09 Semiconductor Components Industries, Llc Semiconductor wafer and method of wafer thinning using grinding phase and separation phase
CN110352115A (zh) * 2017-03-06 2019-10-18 应用材料公司 为cmp位置特定研磨(lsp)设计的螺旋及同心圆移动
JP7049801B2 (ja) * 2017-10-12 2022-04-07 株式会社ディスコ 被加工物の研削方法
KR102113026B1 (ko) * 2018-11-29 2020-05-20 한국생산기술연구원 웨이퍼용 화학기계연마 장치 및 이의 희생부 위치 제어 방법
CN111906694A (zh) * 2020-08-13 2020-11-10 蚌埠中光电科技有限公司 一种玻璃研磨垫的在线修整装置

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Also Published As

Publication number Publication date
US20020137436A1 (en) 2002-09-26
WO2001054862A1 (en) 2001-08-02
JP2003521117A (ja) 2003-07-08
AU2001229403A1 (en) 2001-08-07
TW471994B (en) 2002-01-11
EP1250215A1 (de) 2002-10-23
EP1250215B1 (de) 2004-04-21
KR20020077677A (ko) 2002-10-12
DE60102891T2 (de) 2005-03-31
US6340326B1 (en) 2002-01-22
KR100780977B1 (ko) 2007-11-29
JP4831910B2 (ja) 2011-12-07
US6729943B2 (en) 2004-05-04

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