JPS60109859U - 半導体ウエ−ハ表面研削装置 - Google Patents

半導体ウエ−ハ表面研削装置

Info

Publication number
JPS60109859U
JPS60109859U JP1983199451U JP19945183U JPS60109859U JP S60109859 U JPS60109859 U JP S60109859U JP 1983199451 U JP1983199451 U JP 1983199451U JP 19945183 U JP19945183 U JP 19945183U JP S60109859 U JPS60109859 U JP S60109859U
Authority
JP
Japan
Prior art keywords
layer member
grinding device
holding table
utility
grinding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1983199451U
Other languages
English (en)
Other versions
JPH0417324Y2 (ja
Inventor
利之 森
Original Assignee
株式会社　デイスコ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社　デイスコ filed Critical 株式会社　デイスコ
Priority to JP1983199451U priority Critical patent/JPS60109859U/ja
Priority to US06/675,786 priority patent/US4693036A/en
Publication of JPS60109859U publication Critical patent/JPS60109859U/ja
Application granted granted Critical
Publication of JPH0417324Y2 publication Critical patent/JPH0417324Y2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/10—Single-purpose machines or devices
    • B24B7/16—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Jigs For Machine Tools (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【図面の簡単な説明】
第１図は、本考案に従って改良された研削装置の一例を
簡略に示す平面図。第２図は、・第１図の研削装置を簡
略に示す側面図。第３図は、第１図の研削装置に使用さ
れている保持テーブルを示す断面図。第４図は、第３図
の保持テーブルにおける表面層部材の平面図。第５図は
、第３図の保持テーブルにおける裏面層部材の平面図。 第６図は、実施例１及び２並びに比較例１及び２におけ
るシリコンウェーハの厚さ測定位置を示す簡略図。 ２・・・・・・研削装置、４・・・・・・支持基台、６
Ａ、６Ｂ及び６″Ｃ・・・・・・研削ホイール組外体、
８・・・・・・保持テ“−プル、２４・・・・・・保持
テーブルの表面層部材、２６・・・・・・保持テーブル
の裏面層部材。 ト４−　−　。 −−（）〜６４−１−１−一

Claims (1)

  1. 【実用新案登録請求の範囲】 １　支持基台と該支持基台に対向して配設された少なく
    とも１個の研削ホイール組立体とを具備し、 該支持基台は少なくとも１個の保持テーブルを含み、該
    保持テーブルの表面は該支持基台の表面を越えて突出せ
    しめられてお四　　　　、該研削ホイール組立体は回転
    自在に装着された支持軸と該支持軸に装着された研削ホ
    イール′″：：象−ｊ２．。□９ｏ工４オ９゜−２、や
    。 置し、該支持軸を回転駆動せしめて該研削ホイールを回
    転せしめると共に、該支持基台と該研削ホイール組立体
    とを相対的に移動せしめて該研削ホイールを該ウエーノ
    １の表面に作用せしめ、かくして該ウェーハの表面を研
    削する研削装置において： 該保持テーブルの少なくとも表面層が ２ｒｖ１ｇＯ，ＳｉＯ□系セラミックから形成されてい
    る、ことを特厳とする研削装置。− ２該保持テーブルは通気性を有し、該保持テーブルを吸
    引源に接続することによって、該ウェーハが該保持テー
    ブルの表面に吸着保持される、実用新案登録請求の範囲
    第１項記載の研削装置。 ３　該保持テーブルは、２Ｍｇｏ、ＳｉＯ□系セラミッ
    クスから形成された略円板形状の表面層部材と、該表面
    層部材の裏面に固定された略円板形状の裏面層部材とか
    ら成り、　　　′ 該表面層部材には、その表面から裏面まで貫通する複数
    個の通気孔が間隔を置いて形成されており、 該裏面層部材には、該吸引源を該表面層の該通気孔に連
    通せしめるための連通手段が形成さ　　　　　−れてい
    る、実用新案登録請求・の範囲第２項記載の研削装置。 ４　該裏面層部材も２Ｍｇｏ、ＳｉＯ２系セラミックス
    −から形成されている、実用新案登録請求の範囲第３項
    記載の研削装置。　　　　　　　、　　　−５該裏面層
    部材は焼成接合によって該表面層部材に固定されている
    、実用新案登録請求の範囲　　　　・第３項又は第４項
    記載の研削装置。 ６　該表面層部材に形成されている該通気孔は、同７し
    状に配列された複数個の円形列に配置されている、実用
    新案登録請求の範囲第３項乃至第５項のいずれかに記載
    の研削装置。 ７　該裏面層部材に形成されている該連通手段は、該通
    気孔の該円形列に対応して該裏面層部　　　。 材の表面に刻設された同心状の複数個の円形溝と、該裏
    面層部材の表面に刻設され該゛円形溝を相互に連通せし
    める複数個の放射状溝と、該円形溝及び／又は該放射状
    溝に開口した一端から該裏面層部材を貫通してその裏面
    まで延びる少なくとも１個の連通孔とから構成されてい
    る、実用新案登録請求の範囲第６項記載の研削装置。 ８　該連通手段は、一端が該円形溝と該放耐溝との交差
    部に開口した複数個の連通孔を含む、実用新案登録請求
    の範囲第７項記載の研削装置。
JP1983199451U 1983-12-28 1983-12-28 半導体ウエ−ハ表面研削装置 Granted JPS60109859U (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1983199451U JPS60109859U (ja) 1983-12-28 1983-12-28 半導体ウエ−ハ表面研削装置
US06/675,786 US4693036A (en) 1983-12-28 1984-11-28 Semiconductor wafer surface grinding apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1983199451U JPS60109859U (ja) 1983-12-28 1983-12-28 半導体ウエ−ハ表面研削装置

Publications (2)

Publication Number Publication Date
JPS60109859U true JPS60109859U (ja) 1985-07-25
JPH0417324Y2 JPH0417324Y2 (ja) 1992-04-17

Family

ID=16408030

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1983199451U Granted JPS60109859U (ja) 1983-12-28 1983-12-28 半導体ウエ−ハ表面研削装置

Country Status (2)

Country Link
US (1) US4693036A (ja)
JP (1) JPS60109859U (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0260247U (ja) * 1988-10-27 1990-05-02
JPH0463142U (ja) * 1990-10-02 1992-05-29
JPH05275513A (ja) * 1992-03-27 1993-10-22 Kyocera Corp 半導体ウェハ保持装置
JP2000216122A (ja) * 1999-01-20 2000-08-04 Toshiba Ceramics Co Ltd 半導体ウェ―ハの平面研削方法
WO2003017347A1 (en) * 2001-08-16 2003-02-27 Skc Co., Ltd. Chemical mechanical polishing pad having wave-shaped grooves
JP2008098351A (ja) * 2006-10-11 2008-04-24 Disco Abrasive Syst Ltd ウエーハの研削加工方法
JP2009233846A (ja) * 2008-03-26 2009-10-15 Kobe Steel Ltd 湿式研削装置およびそのための研削砥石セグメント

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USRE37997E1 (en) 1990-01-22 2003-02-18 Micron Technology, Inc. Polishing pad with controlled abrasion rate
US5029418A (en) * 1990-03-05 1991-07-09 Eastman Kodak Company Sawing method for substrate cutting operations
US5230184A (en) * 1991-07-05 1993-07-27 Motorola, Inc. Distributed polishing head
US5245794A (en) * 1992-04-09 1993-09-21 Advanced Micro Devices, Inc. Audio end point detector for chemical-mechanical polishing and method therefor
JP2513426B2 (ja) * 1993-09-20 1996-07-03 日本電気株式会社 ウェ―ハ研磨装置
US5749999A (en) * 1994-02-04 1998-05-12 Lsi Logic Corporation Method for making a surface-mount technology plastic-package ball-grid array integrated circuit
US5435482A (en) * 1994-02-04 1995-07-25 Lsi Logic Corporation Integrated circuit having a coplanar solder ball contact array
JP3055401B2 (ja) * 1994-08-29 2000-06-26 信越半導体株式会社 ワークの平面研削方法及び装置
JP2882458B2 (ja) * 1994-11-28 1999-04-12 株式会社東京精密 ウェーハ面取り機
US5632667A (en) * 1995-06-29 1997-05-27 Delco Electronics Corporation No coat backside wafer grinding process
US5738574A (en) * 1995-10-27 1998-04-14 Applied Materials, Inc. Continuous processing system for chemical mechanical polishing
US7097544B1 (en) * 1995-10-27 2006-08-29 Applied Materials Inc. Chemical mechanical polishing system having multiple polishing stations and providing relative linear polishing motion
US6022807A (en) * 1996-04-24 2000-02-08 Micro Processing Technology, Inc. Method for fabricating an integrated circuit
JPH10329011A (ja) 1997-03-21 1998-12-15 Canon Inc 精密研磨装置及び方法
US6425812B1 (en) 1997-04-08 2002-07-30 Lam Research Corporation Polishing head for chemical mechanical polishing using linear planarization technology
US6244946B1 (en) 1997-04-08 2001-06-12 Lam Research Corporation Polishing head with removable subcarrier
WO1999009588A1 (en) * 1997-08-21 1999-02-25 Memc Electronic Materials, Inc. Method of processing semiconductor wafers
US5827111A (en) * 1997-12-15 1998-10-27 Micron Technology, Inc. Method and apparatus for grinding wafers
US5827112A (en) * 1997-12-15 1998-10-27 Micron Technology, Inc. Method and apparatus for grinding wafers
JP3618220B2 (ja) * 1998-03-30 2005-02-09 信越半導体株式会社 薄板の研磨方法および薄板保持プレート
AU4960699A (en) * 1998-06-24 2000-01-10 Medallion Technology, Llc Chuck table for semiconductor wafer
US6203407B1 (en) 1998-09-03 2001-03-20 Micron Technology, Inc. Method and apparatus for increasing-chemical-polishing selectivity
US6214704B1 (en) 1998-12-16 2001-04-10 Memc Electronic Materials, Inc. Method of processing semiconductor wafers to build in back surface damage
US6294469B1 (en) 1999-05-21 2001-09-25 Plasmasil, Llc Silicon wafering process flow
US6287172B1 (en) * 1999-12-17 2001-09-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method for improvement of tungsten chemical-mechanical polishing process
US6340326B1 (en) 2000-01-28 2002-01-22 Lam Research Corporation System and method for controlled polishing and planarization of semiconductor wafers
US6705930B2 (en) 2000-01-28 2004-03-16 Lam Research Corporation System and method for polishing and planarizing semiconductor wafers using reduced surface area polishing pads and variable partial pad-wafer overlapping techniques
US6666756B1 (en) 2000-03-31 2003-12-23 Lam Research Corporation Wafer carrier head assembly
US6585572B1 (en) 2000-08-22 2003-07-01 Lam Research Corporation Subaperture chemical mechanical polishing system
US6652357B1 (en) 2000-09-22 2003-11-25 Lam Research Corporation Methods for controlling retaining ring and wafer head tilt for chemical mechanical polishing
US6640155B2 (en) 2000-08-22 2003-10-28 Lam Research Corporation Chemical mechanical polishing apparatus and methods with central control of polishing pressure applied by polishing head
US7481695B2 (en) 2000-08-22 2009-01-27 Lam Research Corporation Polishing apparatus and methods having high processing workload for controlling polishing pressure applied by polishing head
US6471566B1 (en) 2000-09-18 2002-10-29 Lam Research Corporation Sacrificial retaining ring CMP system and methods for implementing the same
US6443815B1 (en) 2000-09-22 2002-09-03 Lam Research Corporation Apparatus and methods for controlling pad conditioning head tilt for chemical mechanical polishing
JP3433930B2 (ja) * 2001-02-16 2003-08-04 株式会社東京精密 ウェーハの平面加工装置及びその平面加工方法
US6561881B2 (en) * 2001-03-15 2003-05-13 Oriol Inc. System and method for chemical mechanical polishing using multiple small polishing pads
US6746318B2 (en) 2001-10-11 2004-06-08 Speedfam-Ipec Corporation Workpiece carrier with adjustable pressure zones and barriers
US20030209310A1 (en) * 2002-05-13 2003-11-13 Fuentes Anastacio C. Apparatus, system and method to reduce wafer warpage
US20100062693A1 (en) * 2008-09-05 2010-03-11 Taiwan Semiconductor Manufacturing Co., Ltd. Two step method and apparatus for polishing metal and other films in semiconductor manufacturing
US9266220B2 (en) 2011-12-30 2016-02-23 Saint-Gobain Abrasives, Inc. Abrasive articles and method of forming same
US10867816B2 (en) * 2016-12-13 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for wafer backside cooling

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JPS5424918A (en) * 1977-07-27 1979-02-24 Japan Metals & Chem Co Ltd Nonshaped refractory having wearrresistivity
JPS58155168A (ja) * 1982-03-04 1983-09-14 Fujikoshi Kikai Kogyo Kk ポリシング用セラミツク定盤の固定装置

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US4183545A (en) * 1978-07-28 1980-01-15 Advanced Simiconductor Materials/America Rotary vacuum-chuck using no rotary union
JPS56152562A (en) * 1980-04-24 1981-11-26 Fujitsu Ltd Grinder
US4521995A (en) * 1980-05-23 1985-06-11 Disco Co., Ltd. Wafer attracting and fixing device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5424918A (en) * 1977-07-27 1979-02-24 Japan Metals & Chem Co Ltd Nonshaped refractory having wearrresistivity
JPS58155168A (ja) * 1982-03-04 1983-09-14 Fujikoshi Kikai Kogyo Kk ポリシング用セラミツク定盤の固定装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0260247U (ja) * 1988-10-27 1990-05-02
JPH0463142U (ja) * 1990-10-02 1992-05-29
JPH05275513A (ja) * 1992-03-27 1993-10-22 Kyocera Corp 半導体ウェハ保持装置
JP2000216122A (ja) * 1999-01-20 2000-08-04 Toshiba Ceramics Co Ltd 半導体ウェ―ハの平面研削方法
WO2003017347A1 (en) * 2001-08-16 2003-02-27 Skc Co., Ltd. Chemical mechanical polishing pad having wave-shaped grooves
JP2008098351A (ja) * 2006-10-11 2008-04-24 Disco Abrasive Syst Ltd ウエーハの研削加工方法
JP2009233846A (ja) * 2008-03-26 2009-10-15 Kobe Steel Ltd 湿式研削装置およびそのための研削砥石セグメント

Also Published As

Publication number Publication date
US4693036A (en) 1987-09-15
JPH0417324Y2 (ja) 1992-04-17

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