DE60045489D1 - DMOS-Transistor mit einer Graben-Gateelektrode und Verfahren zu dessen Herstellung - Google Patents

DMOS-Transistor mit einer Graben-Gateelektrode und Verfahren zu dessen Herstellung

Info

Publication number
DE60045489D1
DE60045489D1 DE60045489T DE60045489T DE60045489D1 DE 60045489 D1 DE60045489 D1 DE 60045489D1 DE 60045489 T DE60045489 T DE 60045489T DE 60045489 T DE60045489 T DE 60045489T DE 60045489 D1 DE60045489 D1 DE 60045489D1
Authority
DE
Germany
Prior art keywords
production
gate electrode
trench gate
dmos transistor
dmos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60045489T
Other languages
English (en)
Inventor
Fwu-Iuan Hshieh
Koon Chong So
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Semiconductor Inc
Original Assignee
General Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Semiconductor Inc filed Critical General Semiconductor Inc
Application granted granted Critical
Publication of DE60045489D1 publication Critical patent/DE60045489D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
DE60045489T 1999-09-14 2000-09-11 DMOS-Transistor mit einer Graben-Gateelektrode und Verfahren zu dessen Herstellung Expired - Lifetime DE60045489D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/395,790 US6518621B1 (en) 1999-09-14 1999-09-14 Trench DMOS transistor having reduced punch-through
PCT/US2000/024737 WO2001020656A2 (en) 1999-09-14 2000-09-11 Dmos transistor having a trench gate electrode and method of making the same

Publications (1)

Publication Number Publication Date
DE60045489D1 true DE60045489D1 (de) 2011-02-17

Family

ID=23564519

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60045489T Expired - Lifetime DE60045489D1 (de) 1999-09-14 2000-09-11 DMOS-Transistor mit einer Graben-Gateelektrode und Verfahren zu dessen Herstellung

Country Status (9)

Country Link
US (2) US6518621B1 (de)
EP (1) EP1230675B1 (de)
JP (1) JP5122711B2 (de)
KR (1) KR100687302B1 (de)
CN (1) CN1183583C (de)
AU (1) AU7128300A (de)
DE (1) DE60045489D1 (de)
TW (1) TW466646B (de)
WO (1) WO2001020656A2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
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US6518621B1 (en) * 1999-09-14 2003-02-11 General Semiconductor, Inc. Trench DMOS transistor having reduced punch-through
US6376315B1 (en) * 2000-03-31 2002-04-23 General Semiconductor, Inc. Method of forming a trench DMOS having reduced threshold voltage
JP4932088B2 (ja) * 2001-02-19 2012-05-16 ルネサスエレクトロニクス株式会社 絶縁ゲート型半導体装置の製造方法
US6657256B2 (en) * 2001-05-22 2003-12-02 General Semiconductor, Inc. Trench DMOS transistor having a zener diode for protection from electro-static discharge
US6781196B2 (en) * 2002-03-11 2004-08-24 General Semiconductor, Inc. Trench DMOS transistor having improved trench structure
US6838722B2 (en) 2002-03-22 2005-01-04 Siliconix Incorporated Structures of and methods of fabricating trench-gated MIS devices
DE10239312B4 (de) * 2002-08-27 2006-08-17 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauelements mit einer Driftzone und einer Feldstoppzone und Halbleiterbauelement mit einer Driftzone und einer Feldstoppzone
KR20050085461A (ko) * 2002-12-10 2005-08-29 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 다운 컨버터 및 전기 부하 스위칭 방법
JP3703816B2 (ja) * 2003-06-18 2005-10-05 株式会社東芝 半導体装置
CN100334740C (zh) * 2003-08-26 2007-08-29 茂德科技股份有限公司 功率金属氧化物半导体场效应晶体管的制造方法
JP4913336B2 (ja) * 2004-09-28 2012-04-11 ルネサスエレクトロニクス株式会社 半導体装置
US20060071270A1 (en) 2004-09-29 2006-04-06 Shibib Muhammed A Metal-oxide-semiconductor device having trenched diffusion region and method of forming same
KR101142104B1 (ko) 2006-02-23 2012-05-03 비쉐이-실리코닉스 단채널 트렌치 ｍｏｓｆｅｔ 및 디바이스를 형성하는 공정
US8105903B2 (en) * 2009-09-21 2012-01-31 Force Mos Technology Co., Ltd. Method for making a trench MOSFET with shallow trench structures
US9425305B2 (en) 2009-10-20 2016-08-23 Vishay-Siliconix Structures of and methods of fabricating split gate MIS devices
US9419129B2 (en) 2009-10-21 2016-08-16 Vishay-Siliconix Split gate semiconductor device with curved gate oxide profile
KR101728363B1 (ko) 2010-03-02 2017-05-02 비쉐이-실리코닉스 듀얼 게이트 디바이스의 구조 및 제조 방법
KR20130044118A (ko) * 2010-08-06 2013-05-02 파나소닉 주식회사 유기 ｅｌ 표시 패널, 표시 장치, 및 유기 ｅｌ 표시 패널의 제조 방법
CN102742357A (zh) 2010-08-06 2012-10-17 松下电器产业株式会社 有机el显示面板、显示装置以及有机el显示面板的制造方法
US20120080748A1 (en) * 2010-09-30 2012-04-05 Force Mos Technology Co., Ltd. Trench mosfet with super pinch-off regions
JP5738653B2 (ja) * 2011-03-31 2015-06-24 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 絶縁ゲート型半導体装置
CN107482054B (zh) 2011-05-18 2021-07-20 威世硅尼克斯公司 半导体器件
US9293376B2 (en) * 2012-07-11 2016-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for power MOS transistor
CN104733524A (zh) * 2013-12-19 2015-06-24 比亚迪股份有限公司 Mosfet功率器件及其形成方法
US10234486B2 (en) 2014-08-19 2019-03-19 Vishay/Siliconix Vertical sense devices in vertical trench MOSFET
CN105702736B (zh) * 2016-01-29 2019-10-11 上海华虹宏力半导体制造有限公司 屏蔽栅-深沟槽mosfet的屏蔽栅氧化层及其形成方法
US10573722B2 (en) * 2016-02-17 2020-02-25 General Electric Company Systems and methods for in-situ doped semiconductor gate electrodes for wide bandgap semiconductor power devices
DE102018107568B4 (de) * 2018-03-29 2021-01-07 Infineon Technologies Ag Leistungshalbleitertransistor, sowie Verfahren zur Verarbeitung eines Leistungshalbleitertransistors

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US4583105A (en) * 1982-12-30 1986-04-15 International Business Machines Corporation Double heterojunction FET with ohmic semiconductor gate and controllable low threshold voltage
JPS61190981A (ja) 1985-02-20 1986-08-25 Casio Comput Co Ltd 半導体装置
US5072266A (en) 1988-12-27 1991-12-10 Siliconix Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
JPH05335585A (ja) * 1992-06-03 1993-12-17 Fuji Electric Co Ltd 絶縁ゲート型電力用半導体素子の製造方法
US5410170A (en) 1993-04-14 1995-04-25 Siliconix Incorporated DMOS power transistors with reduced number of contacts using integrated body-source connections
JP3400846B2 (ja) 1994-01-20 2003-04-28 三菱電機株式会社 トレンチ構造を有する半導体装置およびその製造方法
US5468982A (en) 1994-06-03 1995-11-21 Siliconix Incorporated Trenched DMOS transistor with channel block at cell trench corners
JP3531291B2 (ja) * 1994-06-23 2004-05-24 株式会社デンソー 炭化珪素半導体装置の製造方法
US5810417A (en) * 1995-09-28 1998-09-22 Mongkol Jesadanont Automatic safety car seats and sheet-type safety-belt
US5854501A (en) * 1995-11-20 1998-12-29 Micron Technology, Inc. Floating gate semiconductor device having a portion formed with a recess
JPH09260650A (ja) * 1996-03-22 1997-10-03 Fuji Electric Co Ltd 炭化ケイ素トレンチｆｅｔおよびその製造方法
JP3150064B2 (ja) * 1996-06-27 2001-03-26 日本電気株式会社 縦型電界効果トランジスタの製法
KR100218260B1 (ko) * 1997-01-14 1999-09-01 김덕중 트랜치 게이트형 모스트랜지스터의 제조방법
US6057558A (en) * 1997-03-05 2000-05-02 Denson Corporation Silicon carbide semiconductor device and manufacturing method thereof
US5885877A (en) * 1997-04-21 1999-03-23 Advanced Micro Devices, Inc. Composite gate electrode incorporating dopant diffusion-retarding barrier layer adjacent to underlying gate dielectric
JP3976374B2 (ja) * 1997-07-11 2007-09-19 三菱電機株式会社 トレンチｍｏｓゲート構造を有する半導体装置及びその製造方法
US6518621B1 (en) * 1999-09-14 2003-02-11 General Semiconductor, Inc. Trench DMOS transistor having reduced punch-through
US6312993B1 (en) * 2000-02-29 2001-11-06 General Semiconductor, Inc. High speed trench DMOS

Also Published As

Publication number Publication date
TW466646B (en) 2001-12-01
JP2004514265A (ja) 2004-05-13
WO2001020656A3 (en) 2002-01-31
CN1384973A (zh) 2002-12-11
EP1230675A1 (de) 2002-08-14
US6518621B1 (en) 2003-02-11
CN1183583C (zh) 2005-01-05
US20010008788A1 (en) 2001-07-19
JP5122711B2 (ja) 2013-01-16
KR20020035139A (ko) 2002-05-09
EP1230675B1 (de) 2011-01-05
WO2001020656A9 (en) 2002-09-26
KR100687302B1 (ko) 2007-02-27
AU7128300A (en) 2001-04-17
WO2001020656A2 (en) 2001-03-22
US6545315B2 (en) 2003-04-08

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