DE60043034D1 - Verfahren und Zusammensetzung zur Entfernung von Photoresistschichten - Google Patents

Verfahren und Zusammensetzung zur Entfernung von Photoresistschichten

Info

Publication number
DE60043034D1
DE60043034D1 DE60043034T DE60043034T DE60043034D1 DE 60043034 D1 DE60043034 D1 DE 60043034D1 DE 60043034 T DE60043034 T DE 60043034T DE 60043034 T DE60043034 T DE 60043034T DE 60043034 D1 DE60043034 D1 DE 60043034D1
Authority
DE
Germany
Prior art keywords
composition
photoresist layers
removing photoresist
layers
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60043034T
Other languages
English (en)
Inventor
Kojiro Abe
Hideki Fukuda
Hisaki Abe
Taketo Maruyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Gas Chemical Co Inc
Original Assignee
Mitsubishi Gas Chemical Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co Inc filed Critical Mitsubishi Gas Chemical Co Inc
Application granted granted Critical
Publication of DE60043034D1 publication Critical patent/DE60043034D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/33—Amino carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/36—Organic compounds containing phosphorus
    • C11D3/361—Phosphonates, phosphinates or phosphonites
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/36—Organic compounds containing phosphorus
    • C11D3/364—Organic compounds containing phosphorus containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/395—Bleaching agents
    • C11D3/3956—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • C11D2111/22—
DE60043034T 1999-03-08 2000-02-25 Verfahren und Zusammensetzung zur Entfernung von Photoresistschichten Expired - Lifetime DE60043034D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06021999A JP4224652B2 (ja) 1999-03-08 1999-03-08 レジスト剥離液およびそれを用いたレジストの剥離方法

Publications (1)

Publication Number Publication Date
DE60043034D1 true DE60043034D1 (de) 2009-11-12

Family

ID=13135844

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60043034T Expired - Lifetime DE60043034D1 (de) 1999-03-08 2000-02-25 Verfahren und Zusammensetzung zur Entfernung von Photoresistschichten

Country Status (7)

Country Link
US (1) US6323169B1 (de)
EP (1) EP1035446B1 (de)
JP (1) JP4224652B2 (de)
KR (1) KR100694924B1 (de)
DE (1) DE60043034D1 (de)
SG (1) SG76645A1 (de)
TW (1) TW521336B (de)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001100436A (ja) 1999-09-28 2001-04-13 Mitsubishi Gas Chem Co Inc レジスト剥離液組成物
CN1426452A (zh) * 2000-04-26 2003-06-25 大金工业株式会社 洗涤剂组合物
US6569252B1 (en) * 2000-06-30 2003-05-27 International Business Machines Corporation Semi-aqueous solvent cleaning of paste processing residue from substrates
US6762132B1 (en) 2000-08-31 2004-07-13 Micron Technology, Inc. Compositions for dissolution of low-K dielectric films, and methods of use
JP2002113431A (ja) * 2000-10-10 2002-04-16 Tokyo Electron Ltd 洗浄方法
JP2002114993A (ja) 2000-10-10 2002-04-16 Tokyo Electron Ltd 洗浄剤及び洗浄方法
JP2002158206A (ja) * 2000-11-17 2002-05-31 Mitsubishi Electric Corp レジスト残渣除去方法およびそれを用いた半導体装置の製造方法
TW554258B (en) * 2000-11-30 2003-09-21 Tosoh Corp Resist stripper
JP4525885B2 (ja) 2001-01-12 2010-08-18 三菱瓦斯化学株式会社 フォトレジスト用現像液及びフォトレジストの現像方法
KR100393118B1 (ko) * 2001-02-22 2003-07-31 현만석 반도체 소자의 레지스트 패턴 형성 방법 및 이 방법에서 사용되는 반도체 웨이퍼 세척액
US6867148B2 (en) * 2001-05-16 2005-03-15 Micron Technology, Inc. Removal of organic material in integrated circuit fabrication using ozonated organic acid solutions
JP4285649B2 (ja) * 2001-07-25 2009-06-24 チョン ヨウン カンパニー リミテッド アルミニウムダイカスト素材のエッチング時発生する珪素成分及び還元性金属塩を除去するための表面処理組成物及び処理方法
KR20030011480A (ko) * 2001-08-03 2003-02-11 주식회사 덕성 포토레지스트용 박리액 조성물
JP3797541B2 (ja) * 2001-08-31 2006-07-19 東京応化工業株式会社 ホトレジスト用剥離液
JP2003122028A (ja) * 2001-10-17 2003-04-25 Mitsubishi Gas Chem Co Inc レジスト剥離液組成物
TWI276682B (en) * 2001-11-16 2007-03-21 Mitsubishi Chem Corp Substrate surface cleaning liquid mediums and cleaning method
EP1468335A4 (de) * 2002-01-11 2006-05-17 Az Electronic Materials Usa Reinigungsmittelzusammensetzung für einen positiv- oder negativ-fotoresist
US20030148624A1 (en) * 2002-01-31 2003-08-07 Kazuto Ikemoto Method for removing resists
US7252718B2 (en) * 2002-05-31 2007-08-07 Ekc Technology, Inc. Forming a passivating aluminum fluoride layer and removing same for use in semiconductor manufacture
EP1520211A2 (de) * 2002-06-07 2005-04-06 Mallinckrodt Baker, Inc. Oxydationsmittel und organische lösungsmittel enthaltende zusammensetzungen zum reinigen von mikroelektronischen substraten
PL207297B1 (pl) * 2002-06-07 2010-11-30 Mallinckrodt Baker Inc Bezkrzemianowa kompozycja czyszcząca i zastosowanie bezkrzemianowej kompozycji czyszczącej
JP2004029346A (ja) * 2002-06-25 2004-01-29 Mitsubishi Gas Chem Co Inc レジスト剥離液組成物
JP2004029276A (ja) * 2002-06-25 2004-01-29 Mitsubishi Gas Chem Co Inc 銅配線基板向け含フッ素レジスト剥離液
DE10331033B4 (de) * 2002-07-12 2010-04-29 Ekc Technology K.K. R&D Business Park Bldg. D-3F, Kawasaki Herstellungsverfahren einer Halbleitervorrichtung und Reinigungszusammensetzung dafür
JP4443864B2 (ja) * 2002-07-12 2010-03-31 株式会社ルネサステクノロジ レジストまたはエッチング残さ物除去用洗浄液および半導体装置の製造方法
JP2009031791A (ja) * 2002-08-14 2009-02-12 Sony Corp レジスト用剥離剤組成物及び半導体装置の製造方法
JP2004133384A (ja) 2002-08-14 2004-04-30 Sony Corp レジスト用剥離剤組成物及び半導体装置の製造方法
KR100464858B1 (ko) * 2002-08-23 2005-01-05 삼성전자주식회사 유기 스트리핑 조성물 및 이를 사용한 산화물 식각 방법
CN100437922C (zh) * 2002-11-08 2008-11-26 和光纯药工业株式会社 洗涤液及使用该洗涤液的洗涤方法
SG129274A1 (en) * 2003-02-19 2007-02-26 Mitsubishi Gas Chemical Co Cleaaning solution and cleaning process using the solution
TW200505975A (en) * 2003-04-18 2005-02-16 Ekc Technology Inc Aqueous fluoride compositions for cleaning semiconductor devices
US7101832B2 (en) * 2003-06-19 2006-09-05 Johnsondiversey, Inc. Cleaners containing peroxide bleaching agents for cleaning paper making equipment and method
CN1934233B (zh) * 2003-10-28 2015-02-04 塞克姆公司 清洁溶液和蚀刻剂及其使用方法
US7521406B2 (en) * 2004-02-11 2009-04-21 Mallinckrodt Baker, Inc Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof
KR101232249B1 (ko) * 2004-08-10 2013-02-12 간또 가가꾸 가부시끼가이샤 반도체 기판 세정액 및 반도체 기판 세정방법
JP4254675B2 (ja) 2004-09-29 2009-04-15 カシオ計算機株式会社 ディスプレイパネル
JP4265515B2 (ja) 2004-09-29 2009-05-20 カシオ計算機株式会社 ディスプレイパネル
JP4637010B2 (ja) * 2004-12-07 2011-02-23 花王株式会社 剥離剤組成物
KR101190907B1 (ko) * 2004-12-07 2012-10-12 가오 가부시키가이샤 박리제 조성물
CN100555580C (zh) 2005-04-04 2009-10-28 马林克罗特贝克公司 前段工序中用于清洁离子注入的光致抗蚀剂的组合物
CN101171551B (zh) 2005-05-06 2012-12-26 安万托特性材料股份有限公司 用于清除蚀刻后和灰化的光致抗蚀剂残余物及大部分光致抗蚀剂的组合物
CN1862391B (zh) * 2005-05-13 2013-07-10 安集微电子（上海）有限公司 除光阻层的组合物及其使用方法
CN1862392B (zh) * 2005-05-13 2011-08-03 安集微电子（上海）有限公司 一种去除光阻层的组合物及其使用方法
WO2006133253A1 (en) * 2005-06-07 2006-12-14 Advanced Technology Materials, Inc. Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal composition
US8658053B2 (en) * 2005-06-24 2014-02-25 Mitsubishi Gas Chemical Company, Inc. Etching composition for metal material and method for manufacturing semiconductor device by using same
JP4734090B2 (ja) * 2005-10-31 2011-07-27 株式会社東芝 半導体装置の製造方法
KR101319113B1 (ko) * 2006-04-13 2013-10-17 동우 화인켐 주식회사 금속용 세정제
US7591956B2 (en) * 2006-05-03 2009-09-22 OMG Electronic Chemicals, Inc. Method and composition for selectively stripping nickel from a substrate
CN101632042B (zh) 2007-03-16 2012-06-13 三菱瓦斯化学株式会社 洗涤用组合物、半导体元件的制造方法
JP5203637B2 (ja) * 2007-05-07 2013-06-05 イー．ケー．シー．テクノロジー．インコーポレーテッド レジスト、エッチング残渣、及び金属酸化物をアルミニウム及びアルミニウム銅合金を有する基板から除去する方法及び組成物
KR20100044777A (ko) * 2007-07-26 2010-04-30 미츠비시 가스 가가쿠 가부시키가이샤 세정 방식용 조성물 및 반도체소자 또는 표시소자의 제조 방법
US7968506B2 (en) * 2008-09-03 2011-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. Wet cleaning stripping of etch residue after trench and via opening formation in dual damascene process
US8497233B2 (en) * 2009-02-25 2013-07-30 Avantor Performance Materials, Inc. Stripping compositions for cleaning ion implanted photoresist from semiconductor device wafers
EP2426705A4 (de) * 2009-04-30 2012-09-26 Lion Corp Verfahren zur reinigung eines halbleitersubstrats und saure lösung
CN103154321B (zh) 2010-10-06 2015-11-25 安格斯公司 选择性蚀刻金属氮化物的组合物及方法
CN103811409B (zh) * 2012-11-12 2016-04-20 中微半导体设备(上海)有限公司 一种增强低介电材料对TiN硬掩模刻蚀选择性的方法
US9593297B2 (en) 2014-10-15 2017-03-14 Micron Technology, Inc. Compositions for removing residues and related methods
FR3043560B1 (fr) * 2015-11-18 2019-12-27 Arkema France Solution aqueuse de peroxyde d'hydrogene comprenant un stabilisant specifique
TWI824299B (zh) * 2020-09-22 2023-12-01 美商恩特葛瑞斯股份有限公司 蝕刻劑組合物

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3841905A (en) * 1970-11-19 1974-10-15 Rbp Chem Corp Method of preparing printed circuit boards with terminal tabs
DE2141235C3 (de) * 1971-08-17 1980-08-07 Siemens Ag, 1000 Berlin Und 8000 Muenchen Ätzmittel für metallbeschichtete SUiciumhalbleiterscheiben
JPH0612455B2 (ja) 1985-08-10 1994-02-16 長瀬産業株式会社 剥離剤組成物
JP2578821B2 (ja) 1987-08-10 1997-02-05 東京応化工業株式会社 ポジ型ホトレジスト用剥離液
JPH01272785A (ja) * 1988-04-25 1989-10-31 Nippon Hyomen Kagaku Kk チタンまたはチタン合金の化学研磨方法
JPH03237007A (ja) * 1990-02-13 1991-10-22 Mitsubishi Gas Chem Co Inc 過酸化水素組成物
JP3264405B2 (ja) 1994-01-07 2002-03-11 三菱瓦斯化学株式会社 半導体装置洗浄剤および半導体装置の製造方法
US5466389A (en) * 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
JPH0820205A (ja) 1994-07-08 1996-01-23 Bridgestone Corp 空気入りラジアルタイヤ
JP3255551B2 (ja) 1995-01-31 2002-02-12 東京応化工業株式会社 レジスト用剥離液組成物
JP2911792B2 (ja) * 1995-09-29 1999-06-23 東京応化工業株式会社 レジスト用剥離液組成物
US5700383A (en) * 1995-12-21 1997-12-23 Intel Corporation Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
JP3690619B2 (ja) * 1996-01-12 2005-08-31 忠弘 大見 洗浄方法及び洗浄装置
US6605230B1 (en) * 1996-03-22 2003-08-12 Merck Patent Gmbh Solutions and processes for removal of sidewall residue after dry etching
TW416987B (en) * 1996-06-05 2001-01-01 Wako Pure Chem Ind Ltd A composition for cleaning the semiconductor substrate surface
KR100248113B1 (ko) * 1997-01-21 2000-03-15 이기원 전자 표시 장치 및 기판용 세정 및 식각 조성물
US5981401A (en) * 1998-03-13 1999-11-09 Micron Technology, Inc. Method for selective etching of anitreflective coatings
JPH11340182A (ja) * 1998-05-25 1999-12-10 Wako Pure Chem Ind Ltd 半導体表面洗浄剤及び洗浄方法

Also Published As

Publication number Publication date
EP1035446B1 (de) 2009-09-30
US6323169B1 (en) 2001-11-27
SG76645A1 (en) 2000-11-21
EP1035446A3 (de) 2001-04-18
KR20000076769A (ko) 2000-12-26
KR100694924B1 (ko) 2007-03-14
EP1035446A2 (de) 2000-09-13
TW521336B (en) 2003-02-21
JP4224652B2 (ja) 2009-02-18
JP2000258924A (ja) 2000-09-22

Similar Documents

Publication Publication Date Title
DE60043034D1 (de) Verfahren und Zusammensetzung zur Entfernung von Photoresistschichten
DE60042184D1 (de) Verfahren und Zusammensetzung zur Entschichtung von Photoresist
DE60120822D1 (de) Meta-Dokument und Verfahren zum Verwalten von Meta-Dokumenten
DE60041430D1 (de) Zusammensetzung zur Entfernung von Photoresist
DE60130836D1 (de) Architektur und Verfahren zur Kontextumschaltung
DE50012364D1 (de) Verfahren und terminal zur eingabe von instruktionen
DE60215063D1 (de) Anlage und Verfahren zur Bestimmung von Bildübereinstimmung
DE50006193D1 (de) Verfahren zur herstellung von otoplastiken und otoplastik
DE60116447D1 (de) Verfahren und System zur Verbindungsbehandlung
DE69940804D1 (de) Verfahren und vorrichtung zur unterdrückung von abklingartefakten
DE60122532D1 (de) Verfahren zur behandlung von mehreren bohrlochintervallen
DE60036912D1 (de) System und Verfahren zur Bandbreite-Basierte Codec-Auswahl
DE50010474D1 (de) Verfahren zur verkapselung von bauelementen
ATE452540T1 (de) Zusammensetzung und verfahren
DE1220503T1 (de) Verfahren und schaltung zur erfassung
DE60120620D1 (de) Netzwerkspielsystem und Verfahren zur Bereitstellung von Netzwerkspiel
DE60128788D1 (de) Zusammensetzung und verfahren zur bekämpfung von pflanzenschädlichen arthropoden
DE60018894D1 (de) Verfahren und System zur Beschichtung
DE60136763D1 (de) Metallisierungsgerät und Verfahren zur Entfernung von Metallisierungsflüssigkeit
DE69923839D1 (de) Verfahren zur reindarstellung von terephthalsäure und isophthalsäure aus xylolgemischen
DE69905260D1 (de) Zusammensetzung und verfahren zur entfernung von säuregasen
DE50206619D1 (de) Reinigungsmaschine und Verfahren zur Reinigung von Schotter
DE60006035D1 (de) Verschmutzungsarme Klebefolien und Verfahren zur Entfernung von Resistmaterial
DE60030519D1 (de) Verfahren zur Unterdrückung von Phantombildern
ATA96197A (de) Verfahren zur reinigung von schadstoffbelasteten gasen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition