DE60136763D1 - Metallisierungsgerät und Verfahren zur Entfernung von Metallisierungsflüssigkeit - Google Patents

Metallisierungsgerät und Verfahren zur Entfernung von Metallisierungsflüssigkeit

Info

Publication number
DE60136763D1
DE60136763D1 DE60136763T DE60136763T DE60136763D1 DE 60136763 D1 DE60136763 D1 DE 60136763D1 DE 60136763 T DE60136763 T DE 60136763T DE 60136763 T DE60136763 T DE 60136763T DE 60136763 D1 DE60136763 D1 DE 60136763D1
Authority
DE
Germany
Prior art keywords
metallization
fluid
metallization apparatus
removing metallization
metallization fluid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60136763T
Other languages
English (en)
Inventor
Satoshi Sendai
Kenya Tomioka
Katsumi Tsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Application granted granted Critical
Publication of DE60136763D1 publication Critical patent/DE60136763D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/004—Sealing devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/005—Contacting devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/06—Suspending or supporting devices for articles to be coated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Electrochemistry (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemically Coating (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
DE60136763T 2000-08-09 2001-08-09 Metallisierungsgerät und Verfahren zur Entfernung von Metallisierungsflüssigkeit Expired - Fee Related DE60136763D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000241503A JP3284496B2 (ja) 2000-08-09 2000-08-09 めっき装置及びめっき液除去方法

Publications (1)

Publication Number Publication Date
DE60136763D1 true DE60136763D1 (de) 2009-01-08

Family

ID=18732681

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60136763T Expired - Fee Related DE60136763D1 (de) 2000-08-09 2001-08-09 Metallisierungsgerät und Verfahren zur Entfernung von Metallisierungsflüssigkeit

Country Status (6)

Country Link
US (2) US6689216B2 (de)
EP (2) EP1179618A3 (de)
JP (1) JP3284496B2 (de)
KR (1) KR100802122B1 (de)
DE (1) DE60136763D1 (de)
TW (1) TW568961B (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6585876B2 (en) 1999-04-08 2003-07-01 Applied Materials Inc. Flow diffuser to be used in electro-chemical plating system and method
US6551488B1 (en) * 1999-04-08 2003-04-22 Applied Materials, Inc. Segmenting of processing system into wet and dry areas
US20060011487A1 (en) * 2001-05-31 2006-01-19 Surfect Technologies, Inc. Submicron and nano size particle encapsulation by electrochemical process and apparatus
JP2003027280A (ja) * 2001-07-18 2003-01-29 Ebara Corp めっき装置
US7690324B1 (en) * 2002-06-28 2010-04-06 Novellus Systems, Inc. Small-volume electroless plating cell
JP2006513041A (ja) * 2002-12-05 2006-04-20 サーフェクト テクノロジーズ インク． コーティングされた磁性粒子及びその応用
US20050048768A1 (en) * 2003-08-26 2005-03-03 Hiroaki Inoue Apparatus and method for forming interconnects
US20050230260A1 (en) * 2004-02-04 2005-10-20 Surfect Technologies, Inc. Plating apparatus and method
DE102006033353B4 (de) * 2006-07-19 2010-11-18 Höllmüller Maschinenbau GmbH Verfahren und Vorrichtung zum Behandeln von flachen, zerbrechlichen Substraten
KR100829923B1 (ko) * 2006-08-30 2008-05-16 세메스 주식회사 스핀헤드 및 이를 이용하는 기판처리방법
GB2453560A (en) * 2007-10-10 2009-04-15 Renewable Energy Corp Asa Wafer electroplating apparatus
GB2459124A (en) * 2008-04-10 2009-10-14 Rec Solar As Wafer holder for electroplating apparatus
US9421617B2 (en) 2011-06-22 2016-08-23 Tel Nexx, Inc. Substrate holder
US8613474B2 (en) 2011-07-06 2013-12-24 Tel Nexx, Inc. Substrate loader and unloader having a Bernoulli support
JP6018961B2 (ja) * 2013-03-26 2016-11-02 株式会社荏原製作所 めっき装置およびめっき方法
WO2019152555A1 (en) * 2018-02-01 2019-08-08 Applied Materials, Inc. Cleaning components and methods in a plating system
CN112074625B (zh) 2018-03-29 2024-03-08 应用材料公司 电镀系统中的基板清洁部件与方法
KR102081706B1 (ko) * 2018-07-18 2020-02-27 세메스 주식회사 기판 처리 방법 및 기판 처리 장치
JP7132136B2 (ja) * 2019-01-23 2022-09-06 上村工業株式会社 ワーク保持治具及び電気めっき装置
JP7132134B2 (ja) * 2019-01-23 2022-09-06 上村工業株式会社 ワーク保持治具及び電気めっき装置
KR102266933B1 (ko) 2019-12-30 2021-06-21 주식회사 금호 도금액 제거용 초음파 세척장치
JPWO2023032191A1 (de) * 2021-09-06 2023-03-09

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4788994A (en) * 1986-08-13 1988-12-06 Dainippon Screen Mfg. Co. Wafer holding mechanism
JP2528962B2 (ja) 1989-02-27 1996-08-28 株式会社日立製作所 試料処理方法及び装置
JPH07118892A (ja) * 1993-09-02 1995-05-09 Yamaha Motor Co Ltd 表面処理装置
US5738776A (en) * 1996-01-19 1998-04-14 Shipley Company, L.L.C. Electroplating process
JP3490238B2 (ja) 1997-02-17 2004-01-26 三菱電機株式会社 メッキ処理装置およびメッキ処理方法
US6017437A (en) * 1997-08-22 2000-01-25 Cutek Research, Inc. Process chamber and method for depositing and/or removing material on a substrate
US6056869A (en) * 1998-06-04 2000-05-02 International Business Machines Corporation Wafer edge deplater for chemical mechanical polishing of substrates
JP2911882B1 (ja) * 1998-06-23 1999-06-23 日本エレクトロプレイテイング・エンジニヤース株式会社 カップ式めっき装置
US6258220B1 (en) * 1998-11-30 2001-07-10 Applied Materials, Inc. Electro-chemical deposition system
KR100665745B1 (ko) * 1999-01-26 2007-01-09 가부시키가이샤 에바라 세이사꾸쇼 구리도금방법 및 그 장치
US6660139B1 (en) * 1999-11-08 2003-12-09 Ebara Corporation Plating apparatus and method
US6352623B1 (en) * 1999-12-17 2002-03-05 Nutool, Inc. Vertically configured chamber used for multiple processes
KR100773165B1 (ko) * 1999-12-24 2007-11-02 가부시키가이샤 에바라 세이사꾸쇼 반도체기판처리장치 및 처리방법
WO2001084621A1 (en) * 2000-04-27 2001-11-08 Ebara Corporation Rotation holding device and semiconductor substrate processing device

Also Published As

Publication number Publication date
EP1179618A2 (de) 2002-02-13
JP2002060995A (ja) 2002-02-28
JP3284496B2 (ja) 2002-05-20
US7241372B2 (en) 2007-07-10
EP1793017B1 (de) 2008-11-26
US20040129575A1 (en) 2004-07-08
TW568961B (en) 2004-01-01
KR20020013449A (ko) 2002-02-20
US20020017465A1 (en) 2002-02-14
KR100802122B1 (ko) 2008-02-11
US6689216B2 (en) 2004-02-10
EP1179618A3 (de) 2006-01-11
EP1793017A1 (de) 2007-06-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee