DE4139163A1 - Referenzspannungserzeugungsschaltkreis - Google Patents

Referenzspannungserzeugungsschaltkreis

Info

Publication number
DE4139163A1
DE4139163A1 DE4139163A DE4139163A DE4139163A1 DE 4139163 A1 DE4139163 A1 DE 4139163A1 DE 4139163 A DE4139163 A DE 4139163A DE 4139163 A DE4139163 A DE 4139163A DE 4139163 A1 DE4139163 A1 DE 4139163A1
Authority
DE
Germany
Prior art keywords
reference voltage
node
substrate
conductive layer
circuit according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE4139163A
Other languages
German (de)
English (en)
Inventor
Yeong-Taek Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE4139163A1 publication Critical patent/DE4139163A1/de
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
DE4139163A 1991-06-19 1991-11-28 Referenzspannungserzeugungsschaltkreis Ceased DE4139163A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910010193A KR930001577A (ko) 1991-06-19 1991-06-19 기준전압 발생회로

Publications (1)

Publication Number Publication Date
DE4139163A1 true DE4139163A1 (de) 1992-12-24

Family

ID=19316014

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4139163A Ceased DE4139163A1 (de) 1991-06-19 1991-11-28 Referenzspannungserzeugungsschaltkreis

Country Status (7)

Country Link
JP (1) JPH04373158A (fr)
KR (1) KR930001577A (fr)
DE (1) DE4139163A1 (fr)
FR (1) FR2678081A1 (fr)
GB (1) GB2256949A (fr)
IT (1) IT1258344B (fr)
TW (1) TW208097B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0573240A2 (fr) * 1992-05-30 1993-12-08 Samsung Electronics Co., Ltd. Générateur de tension de référence
DE10211912A1 (de) * 2002-03-18 2003-10-16 Infineon Technologies Ag Integrierter Schaltkreis und Verfahren zum Steuern einer Stromversorgung desselben

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970010284B1 (en) * 1993-12-18 1997-06-23 Samsung Electronics Co Ltd Internal voltage generator of semiconductor integrated circuit
DE19618914C1 (de) * 1996-05-10 1997-08-14 Siemens Ag Schaltungsanordnung zur Erzeugung eines Referenzpotentials
KR100333547B1 (ko) * 1999-06-29 2002-04-24 박종섭 기준전압 발생기
DE102011089402B4 (de) * 2011-04-28 2015-07-16 Zentrum Mikroelektronik Dresden Ag Anordnung und Verfahren zur Erzeugung einer Ausgangsspannung

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3515006A1 (de) * 1984-04-26 1985-10-31 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Spannungsausgangskreis

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5849449B2 (ja) * 1977-08-03 1983-11-04 大和製罐株式会社 空気流による物体搬送方法
US4277739A (en) * 1979-06-01 1981-07-07 National Semiconductor Corporation Fixed voltage reference circuit
JPS6089956A (ja) * 1983-10-24 1985-05-20 Toshiba Corp 半導体装置
US4553083A (en) * 1983-12-01 1985-11-12 Advanced Micro Devices, Inc. Bandgap reference voltage generator with VCC compensation
JPS6132565A (ja) * 1984-07-25 1986-02-15 Nec Corp Ｍｏｓ集積回路
JPS61172364A (ja) * 1985-09-27 1986-08-04 Nec Corp 定電圧回路を形成した半導体装置
US4795918A (en) * 1987-05-01 1989-01-03 Fairchild Semiconductor Corporation Bandgap voltage reference circuit with an npn current bypass circuit
US4849933A (en) * 1987-05-06 1989-07-18 Advanced Micro Devices, Inc. Bipolar programmable logic array
US4795961A (en) * 1987-06-10 1989-01-03 Unitrode Corporation Low-noise voltage reference
JPS6455623A (en) * 1987-08-27 1989-03-02 Fujitsu Ltd Reference voltage generating circuit
US4906863A (en) * 1988-02-29 1990-03-06 Texas Instruments Incorporated Wide range power supply BiCMOS band-gap reference voltage circuit
DE4005756A1 (de) * 1989-04-01 1990-10-04 Bosch Gmbh Robert Praezisions-referenzspannungsquelle

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3515006A1 (de) * 1984-04-26 1985-10-31 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Spannungsausgangskreis

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Band-Gap-Spannungsreferenz". In: Elektor 3/89, S. 64 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0573240A2 (fr) * 1992-05-30 1993-12-08 Samsung Electronics Co., Ltd. Générateur de tension de référence
EP0573240A3 (fr) * 1992-05-30 1995-05-17 Samsung Electronics Co Ltd Générateur de tension de référence.
DE10211912A1 (de) * 2002-03-18 2003-10-16 Infineon Technologies Ag Integrierter Schaltkreis und Verfahren zum Steuern einer Stromversorgung desselben
DE10211912B4 (de) * 2002-03-18 2004-02-05 Infineon Technologies Ag Integrierter Schaltkreis und Verfahren zum Steuern einer Stromversorgung desselben
US6956304B2 (en) 2002-03-18 2005-10-18 Infineon Technologies Ag Integrated circuit and method for controlling a power supply thereof

Also Published As

Publication number Publication date
TW208097B (fr) 1993-06-21
GB2256949A (en) 1992-12-23
IT1258344B (it) 1996-02-26
FR2678081A1 (fr) 1992-12-24
GB9124287D0 (en) 1992-01-08
ITRM920026A0 (it) 1992-01-16
JPH04373158A (ja) 1992-12-25
KR930001577A (ko) 1993-01-16
ITRM920026A1 (it) 1993-07-16

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8131 Rejection