DE4034186A1 - Sperrschicht-feldeffekttransistor und verfahren zu seiner herstellung - Google Patents
Sperrschicht-feldeffekttransistor und verfahren zu seiner herstellungInfo
- Publication number
- DE4034186A1 DE4034186A1 DE4034186A DE4034186A DE4034186A1 DE 4034186 A1 DE4034186 A1 DE 4034186A1 DE 4034186 A DE4034186 A DE 4034186A DE 4034186 A DE4034186 A DE 4034186A DE 4034186 A1 DE4034186 A1 DE 4034186A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor layer
- relatively high
- gallium arsenide
- type
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 230000004888 barrier function Effects 0.000 title abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 35
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 35
- 230000005669 field effect Effects 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 17
- 230000007704 transition Effects 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- -1 silicon ions Chemical class 0.000 claims description 2
- 239000000356 contaminant Substances 0.000 claims 1
- 238000002513 implantation Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 108091006146 Channels Proteins 0.000 description 41
- 238000005468 ion implantation Methods 0.000 description 14
- 238000005530 etching Methods 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 11
- 230000004044 response Effects 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 3
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 description 1
- 101100400378 Mus musculus Marveld2 gene Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910001425 magnesium ion Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1283877A JPH03145139A (ja) | 1989-10-30 | 1989-10-30 | 電界効果トランジスタとその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE4034186A1 true DE4034186A1 (de) | 1991-05-02 |
Family
ID=17671336
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE4034186A Withdrawn DE4034186A1 (de) | 1989-10-30 | 1990-10-26 | Sperrschicht-feldeffekttransistor und verfahren zu seiner herstellung |
| DE4034559A Expired - Fee Related DE4034559C2 (de) | 1989-10-30 | 1990-10-30 | Sperrschicht-Feldeffekttransistor und Verfahren zu seiner Herstellung |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE4034559A Expired - Fee Related DE4034559C2 (de) | 1989-10-30 | 1990-10-30 | Sperrschicht-Feldeffekttransistor und Verfahren zu seiner Herstellung |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5159414A (ja) |
| JP (1) | JPH03145139A (ja) |
| DE (2) | DE4034186A1 (ja) |
| FR (1) | FR2653935B1 (ja) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5304825A (en) * | 1992-08-20 | 1994-04-19 | Motorola, Inc. | Linear heterojunction field effect transistor |
| US6365925B2 (en) * | 1997-09-12 | 2002-04-02 | Sony Corporation | Semiconductor device |
| JP2000036591A (ja) * | 1998-07-21 | 2000-02-02 | Fujitsu Quantum Device Kk | 半導体装置 |
| JP4586547B2 (ja) * | 2005-01-24 | 2010-11-24 | 住友電気工業株式会社 | 接合型電界効果トランジスタ |
| JP2007194588A (ja) | 2005-12-20 | 2007-08-02 | Sony Corp | 電界効果トランジスタ及びこの電界効果トランジスタを備えた半導体装置並びに半導体装置の製造方法 |
| US7525138B2 (en) * | 2007-05-03 | 2009-04-28 | Dsm Solutions, Inc. | JFET device with improved off-state leakage current and method of fabrication |
| US9343588B2 (en) * | 2011-02-22 | 2016-05-17 | Infineon Technologies Austria Ag | Normally-off semiconductor switches and normally-off JFETs |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56110269A (en) * | 1980-02-04 | 1981-09-01 | Nippon Telegr & Teleph Corp <Ntt> | P-n junction gate-type field effect transistor |
| JPS56126977A (en) * | 1980-03-11 | 1981-10-05 | Nec Corp | Junction type field effect transistor |
| JPS57112079A (en) * | 1980-12-29 | 1982-07-12 | Fujitsu Ltd | Field-effect semiconductor device |
| JPS57176772A (en) * | 1981-04-23 | 1982-10-30 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| JPS60189268A (ja) * | 1984-03-08 | 1985-09-26 | Fujitsu Ltd | 半導体装置 |
| JPS61170071A (ja) * | 1985-01-23 | 1986-07-31 | Sony Corp | 化合物半導体を用いた接合ゲ−ト型電界効果トランジスタ |
| US4746627A (en) * | 1986-10-30 | 1988-05-24 | Mcdonnell Douglas Corporation | Method of making complementary GaAs heterojunction transistors |
| EP0268426A3 (en) * | 1986-11-17 | 1989-03-15 | Linear Technology Corporation | High speed junction field effect transistor for use in bipolar integrated circuits |
| JPS63133679A (ja) * | 1986-11-26 | 1988-06-06 | Toshiba Corp | 横型接合形電界効果トランジスタ |
| JPS63226967A (ja) * | 1987-03-16 | 1988-09-21 | Nec Corp | 化合物半導体接合型電界効果トランジスタ及びその製造方法 |
| DE3807880A1 (de) * | 1988-03-10 | 1989-09-21 | Daimler Benz Ag | Mittelkonsole fuer kraftwagen |
-
1989
- 1989-10-30 JP JP1283877A patent/JPH03145139A/ja active Pending
-
1990
- 1990-10-24 US US07/602,804 patent/US5159414A/en not_active Expired - Fee Related
- 1990-10-26 DE DE4034186A patent/DE4034186A1/de not_active Withdrawn
- 1990-10-30 DE DE4034559A patent/DE4034559C2/de not_active Expired - Fee Related
- 1990-10-30 FR FR9013462A patent/FR2653935B1/fr not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03145139A (ja) | 1991-06-20 |
| FR2653935B1 (fr) | 1997-03-28 |
| US5159414A (en) | 1992-10-27 |
| FR2653935A1 (fr) | 1991-05-03 |
| DE4034559C2 (de) | 1995-07-13 |
| DE4034559A1 (de) | 1991-05-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8130 | Withdrawal |