DE3887109D1 - Halbleiterspeichervorrichtung mit einer gleichzeitigen Löschfunktion für einen Teil der Speicherdaten. - Google Patents

Halbleiterspeichervorrichtung mit einer gleichzeitigen Löschfunktion für einen Teil der Speicherdaten.

Info

Publication number
DE3887109D1
DE3887109D1 DE88119976T DE3887109T DE3887109D1 DE 3887109 D1 DE3887109 D1 DE 3887109D1 DE 88119976 T DE88119976 T DE 88119976T DE 3887109 T DE3887109 T DE 3887109T DE 3887109 D1 DE3887109 D1 DE 3887109D1
Authority
DE
Germany
Prior art keywords
erase function
memory device
semiconductor memory
simultaneous erase
memory data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88119976T
Other languages
English (en)
Other versions
DE3887109T2 (de
Inventor
Takayasu C O Patent Di Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3887109D1 publication Critical patent/DE3887109D1/de
Publication of DE3887109T2 publication Critical patent/DE3887109T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
DE3887109T 1987-11-30 1988-11-30 Halbleiterspeichervorrichtung mit einer gleichzeitigen Löschfunktion für einen Teil der Speicherdaten. Expired - Fee Related DE3887109T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62302678A JPH07109701B2 (ja) 1987-11-30 1987-11-30 キャッシュメモリ

Publications (2)

Publication Number Publication Date
DE3887109D1 true DE3887109D1 (de) 1994-02-24
DE3887109T2 DE3887109T2 (de) 1994-06-16

Family

ID=17911869

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3887109T Expired - Fee Related DE3887109T2 (de) 1987-11-30 1988-11-30 Halbleiterspeichervorrichtung mit einer gleichzeitigen Löschfunktion für einen Teil der Speicherdaten.

Country Status (5)

Country Link
US (1) US4958326A (de)
EP (1) EP0318952B1 (de)
JP (1) JPH07109701B2 (de)
KR (1) KR930001282B1 (de)
DE (1) DE3887109T2 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5572480A (en) * 1990-02-09 1996-11-05 Hitachi Ltd. Semiconductor integrated circuit device and process for fabricating the same
JP2624864B2 (ja) * 1990-02-28 1997-06-25 株式会社東芝 不揮発性半導体メモリ
JPH0461091A (ja) * 1990-06-29 1992-02-27 Nec Corp メモリ素子
EP0477985A2 (de) * 1990-09-27 1992-04-01 Oki Electric Industry Co., Ltd. Halbleiterspeicherschaltung
JP2519593B2 (ja) * 1990-10-24 1996-07-31 三菱電機株式会社 半導体記憶装置
US5245570A (en) * 1990-12-21 1993-09-14 Intel Corporation Floating gate non-volatile memory blocks and select transistors
JPH0756759B2 (ja) * 1990-12-27 1995-06-14 株式会社東芝 スタティック型半導体記憶装置
JP3299285B2 (ja) * 1991-04-23 2002-07-08 株式会社日立製作所 半導体記憶装置
US5249152A (en) * 1991-06-20 1993-09-28 Unisys Corporation Bookkeeping memory
US5307314A (en) * 1991-07-15 1994-04-26 Micron Technology, Inc. Split read/write dynamic random access memory
JP3068944B2 (ja) * 1992-04-03 2000-07-24 株式会社東芝 マスクｒｏｍ
US5311467A (en) * 1992-04-07 1994-05-10 Sgs-Thomson Microelectronics, Inc. Selective bulk write operation
JPH05342855A (ja) * 1992-06-04 1993-12-24 Nec Corp 半導体メモリ回路
US5280447A (en) * 1992-06-19 1994-01-18 Intel Corporation Floating gate nonvolatile memory with configurable erasure blocks
US5267196A (en) * 1992-06-19 1993-11-30 Intel Corporation Floating gate nonvolatile memory with distributed blocking feature
JPH06139776A (ja) * 1992-10-23 1994-05-20 Fujitsu Ltd 半導体記憶装置
US5359557A (en) * 1992-12-04 1994-10-25 International Business Machines Corporation Dual-port array with storage redundancy having a cross-write operation
US5319606A (en) * 1992-12-14 1994-06-07 International Business Machines Corporation Blocked flash write in dynamic RAM devices
US5506814A (en) * 1993-05-28 1996-04-09 Micron Technology, Inc. Video random access memory device and method implementing independent two WE nibble control
JPH07235193A (ja) * 1993-12-28 1995-09-05 Toshiba Corp 半導体記憶装置
US5473562A (en) * 1994-08-05 1995-12-05 Vlsi Technology, Inc. Method and apparatus for minimizing power-up crowbar current in a retargetable SRAM memory system
JP3781793B2 (ja) * 1995-01-10 2006-05-31 株式会社ルネサステクノロジ ダイナミック型半導体記憶装置
US5621690A (en) * 1995-04-28 1997-04-15 Intel Corporation Nonvolatile memory blocking architecture and redundancy
US5663923A (en) * 1995-04-28 1997-09-02 Intel Corporation Nonvolatile memory blocking architecture
JPH0936328A (ja) * 1995-07-14 1997-02-07 Hitachi Ltd ダイナミック型ｒａｍ
JP2800730B2 (ja) * 1995-08-17 1998-09-21 日本電気株式会社 半導体記憶装置
JP3908338B2 (ja) * 1997-06-30 2007-04-25 富士通株式会社 半導体記憶装置
US5959892A (en) * 1997-08-26 1999-09-28 Macronix International Co., Ltd. Apparatus and method for programming virtual ground EPROM array cell without disturbing adjacent cells
EP1122740A1 (de) * 2000-02-04 2001-08-08 Infineon Technologies AG Integrierter Halbleiterspeicher und Verfahren zum Rücksetzen von Speicherzellen eines integrierten Halbleiterspeichers
CN100401371C (zh) * 2004-02-10 2008-07-09 恩益禧电子股份有限公司 能够实现高速访问的图像存储器结构
KR100850283B1 (ko) * 2007-01-25 2008-08-04 삼성전자주식회사 3차원 적층구조를 가지는 저항성 반도체 메모리 장치 및그의 워드라인 디코딩 방법
US8411491B1 (en) * 2011-01-03 2013-04-02 Altera Corporation Memory array with distributed clear transistors and variable memory element power supply
US9025356B2 (en) * 2011-08-30 2015-05-05 Taiwan Semiconductor Manufacturing Co., Ltd. Fly-over conductor segments in integrated circuits with successive load devices along a signal path
US9804793B2 (en) * 2016-03-04 2017-10-31 Intel Corporation Techniques for a write zero operation
US11302365B2 (en) * 2018-09-27 2022-04-12 Synopsys, Inc. Area efficient and high-performance wordline segmented architecture

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3846624A (en) * 1973-05-11 1974-11-05 Canon Kk Automatic clearing device
US4172291A (en) * 1978-08-07 1979-10-23 Fairchild Camera And Instrument Corp. Preset circuit for information storage devices
JPS5562588A (en) * 1978-10-31 1980-05-12 Matsushita Electric Ind Co Ltd Semiconductor memory circuit
EP0214705B1 (de) * 1980-10-15 1992-01-15 Kabushiki Kaisha Toshiba Halbleiterspeicher mit Datenprogrammierzeit
JPS58222489A (ja) * 1982-06-18 1983-12-24 Nec Corp 半導体記憶装置
US4567578A (en) * 1982-09-08 1986-01-28 Harris Corporation Cache memory flush scheme
JPS61126689A (ja) * 1984-11-21 1986-06-14 Fujitsu Ltd 半導体記憶装置
US4789967A (en) * 1986-09-16 1988-12-06 Advanced Micro Devices, Inc. Random access memory device with block reset
JPH0612612B2 (ja) * 1987-03-06 1994-02-16 株式会社東芝 半導体記憶装置
US4890263A (en) * 1988-05-31 1989-12-26 Dallas Semiconductor Corporation RAM with capability for rapid clearing of data from memory by simultaneously selecting all row lines

Also Published As

Publication number Publication date
DE3887109T2 (de) 1994-06-16
KR890008833A (ko) 1989-07-12
EP0318952B1 (de) 1994-01-12
JPH07109701B2 (ja) 1995-11-22
JPH01144294A (ja) 1989-06-06
EP0318952A3 (de) 1991-09-04
EP0318952A2 (de) 1989-06-07
KR930001282B1 (ko) 1993-02-25
US4958326A (en) 1990-09-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee