DE3856452D1 - Herstellungsmethode für ein supraleitendes Bauelement - Google Patents
Herstellungsmethode für ein supraleitendes BauelementInfo
- Publication number
- DE3856452D1 DE3856452D1 DE3856452T DE3856452T DE3856452D1 DE 3856452 D1 DE3856452 D1 DE 3856452D1 DE 3856452 T DE3856452 T DE 3856452T DE 3856452 T DE3856452 T DE 3856452T DE 3856452 D1 DE3856452 D1 DE 3856452D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- superconducting component
- superconducting
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
- H10N60/124—Josephson-effect devices comprising high-Tc ceramic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
- H10N60/0941—Manufacture or treatment of Josephson-effect devices comprising high-Tc ceramic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/128—Junction-based devices having three or more electrodes, e.g. transistor-like structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/701—Coated or thin film device, i.e. active or passive
- Y10S505/702—Josephson junction present
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/701—Coated or thin film device, i.e. active or passive
- Y10S505/703—Microelectronic device with superconducting conduction line
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/704—Wire, fiber, or cable
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4255887 | 1987-02-27 | ||
JP14704387 | 1987-06-15 | ||
JP15959687 | 1987-06-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3856452D1 true DE3856452D1 (de) | 2001-02-15 |
DE3856452T2 DE3856452T2 (de) | 2001-08-23 |
Family
ID=27291262
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3855245T Expired - Fee Related DE3855245T2 (de) | 1987-02-27 | 1988-02-25 | Supraleiter-Bauelement |
DE3856452T Expired - Fee Related DE3856452T2 (de) | 1987-02-27 | 1988-02-25 | Herstellungsmethode für ein supraleitendes Bauelement |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3855245T Expired - Fee Related DE3855245T2 (de) | 1987-02-27 | 1988-02-25 | Supraleiter-Bauelement |
Country Status (6)
Country | Link |
---|---|
US (5) | US5126315A (de) |
EP (2) | EP0673073B1 (de) |
JP (3) | JP2907832B2 (de) |
KR (1) | KR910002311B1 (de) |
CN (1) | CN1007480B (de) |
DE (2) | DE3855245T2 (de) |
Families Citing this family (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR910002311B1 (ko) * | 1987-02-27 | 1991-04-11 | 가부시기가이샤 히다찌세이사꾸쇼 | 초전도 디바이스 |
US5026682A (en) * | 1987-04-13 | 1991-06-25 | International Business Machines Corporation | Devices using high Tc superconductors |
US5221660A (en) * | 1987-12-25 | 1993-06-22 | Sumitomo Electric Industries, Ltd. | Semiconductor substrate having a superconducting thin film |
DE3822905A1 (de) * | 1988-07-06 | 1990-01-11 | Siemens Ag | Josephson-tunnelelement mi metalloxidischem supraleitermaterial und verfahren zur herstellung des elements |
US5523282A (en) * | 1988-08-18 | 1996-06-04 | Trw Inc. | High-frequency substrate material for thin-film layered perovskite superconductors |
JPH0783146B2 (ja) * | 1989-05-08 | 1995-09-06 | 株式会社日立製作所 | 酸化物超電導トランジスタ装置の製造方法 |
JP2682136B2 (ja) * | 1989-05-12 | 1997-11-26 | 松下電器産業株式会社 | ジョセフソン素子の製造方法 |
EP0406126B2 (de) * | 1989-06-30 | 1997-12-17 | Sumitomo Electric Industries, Ltd. | Substrat mit einer supraleitenden Schicht |
JPH0793461B2 (ja) * | 1989-07-10 | 1995-10-09 | 株式会社日立製作所 | 電界効果型超電導トランジスタ装置の製造方法 |
JPH03150879A (ja) * | 1989-11-08 | 1991-06-27 | Hitachi Ltd | 超電導スイッチ素子 |
FR2656956B1 (fr) * | 1990-01-05 | 1997-01-24 | Centre Nat Rech Scient | Element de circuit electrique en materiau supraconducteur de type 2. |
US5380704A (en) * | 1990-02-02 | 1995-01-10 | Hitachi, Ltd. | Superconducting field effect transistor with increased channel length |
US5101243A (en) * | 1990-05-21 | 1992-03-31 | International Business Machines Corporation | Superconducting device structures employing anisotropy of the material energy gap |
JPH05894A (ja) * | 1990-06-28 | 1993-01-08 | Sumitomo Electric Ind Ltd | 複合酸化物超電導薄膜 |
CA2047139C (en) * | 1990-07-16 | 1997-12-09 | Mitsuchika Saitoh | Method for manufacturing superconducting device composed of oxide superconductor material and superconducting device manufactured thereby |
EP0477063B1 (de) * | 1990-09-06 | 1996-12-04 | Sumitomo Electric Industries, Ltd. | Supraleitendes Bauelement mit verringerter Dicke der supraleitenden Oxydschicht und dessen Herstellungsverfahren |
CA2051048C (en) * | 1990-09-10 | 1996-07-02 | Takao Nakamura | Superconducting device having a reduced thickness of oxide superconducting layer and method for manufacturing the same |
CA2052380C (en) * | 1990-09-27 | 1998-04-14 | Takao Nakamura | Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same |
DE69114435T2 (de) * | 1990-09-27 | 1996-06-13 | Sumitomo Electric Industries | Supraleitendes Bauelement und dessen Herstellungsverfahren. |
EP0478463B1 (de) * | 1990-09-27 | 1996-05-08 | Sumitomo Electric Industries, Ltd. | Supraleitendes Bauelement mit extrem dünnem supraleitenden Kanal aus supraleitendem Oxidmaterial |
US5407903A (en) * | 1990-09-28 | 1995-04-18 | Sumitomo Electric Industries, Ltd. | Superconducting device having a reduced thickness of oxide superconducting layer |
DE69119022T2 (de) * | 1990-10-08 | 1996-10-31 | Sumitomo Electric Industries | Supraleitende Einrichtung mit ultradünnem Kanal aus oxydisch supraleitendem Material und Verfahren zu deren Herstellung |
CA2054470C (en) * | 1990-10-30 | 1997-07-01 | Takao Nakamura | Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby |
CA2054644C (en) * | 1990-10-31 | 1998-03-31 | Takao Nakamura | Superconducting device having an extremely short superconducting channel formed of extremely thin oxide superconductor film and method for manufacturing same |
US5856275A (en) * | 1990-11-01 | 1999-01-05 | Sumitomo Electric Industries, Ltd. | Superconducting wiring lines and process for fabricating the same |
JP3092160B2 (ja) * | 1990-11-30 | 2000-09-25 | ソニー株式会社 | 高速素子及び高速メモリ素子 |
DE69132972T2 (de) * | 1991-01-07 | 2003-03-13 | Ibm | Supraleitender Feldeffekttransistor mit inverser MISFET-Struktur und Verfahren zu dessen Herstellung |
EP0496215B1 (de) * | 1991-01-21 | 1995-08-30 | Siemens Aktiengesellschaft | Verfahren zur Herstellung eines strukturierten Aufbaus mit Hochtemperatursupraleitermaterial |
CA2062294C (en) * | 1991-03-04 | 1997-01-14 | Hiroshi Inada | Thin film of oxide superconductor possessing locally different crystal orientations and processes for preparing the same |
DE69210523T2 (de) * | 1991-08-28 | 1997-01-02 | Sumitomo Electric Industries | Verfahren zur Herstellung von supraleitenden Schichten aus supraleitendem Oxyd in denen nicht-supraleitende Gebiete vorkommen und Verfahren zur Herstellung eines Bauelements welches solche Schichten enthält |
US5430011A (en) * | 1991-09-17 | 1995-07-04 | Sumitomi Electric Industries, Ltd. | Crystal compensated superconducting thin film formed of oxide superconductor material |
EP0571633A1 (de) * | 1991-11-13 | 1993-12-01 | Seiko Epson Corporation | Supraleitendes element |
CA2084174C (en) * | 1991-11-30 | 1997-07-29 | Takao Nakamura | Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing thesame |
DE69218388T2 (de) * | 1991-12-10 | 1997-10-23 | Sumitomo Electric Industries | Supraleitendes Bauelement mit extrem dünnem Kanal aus supraleitendem Oxyd und sein Herstellungsverfahren |
CA2085172C (en) * | 1991-12-12 | 1996-07-23 | Takao Nakamura | Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same |
JPH05251776A (ja) * | 1991-12-13 | 1993-09-28 | Sumitomo Electric Ind Ltd | 超電導素子およびその作製方法 |
US5274249A (en) * | 1991-12-20 | 1993-12-28 | University Of Maryland | Superconducting field effect devices with thin channel layer |
US5252551A (en) * | 1991-12-27 | 1993-10-12 | The United States Of America As Represented By The Department Of Energy | Superconducting composite with multilayer patterns and multiple buffer layers |
DE4320484A1 (de) * | 1993-06-21 | 1994-12-22 | Dornier Gmbh | Steuerbares Supraleiter-Bauelement |
JPH0745880A (ja) * | 1993-07-29 | 1995-02-14 | Sumitomo Electric Ind Ltd | 絶縁体薄膜と酸化物超電導薄膜との積層膜 |
US6610633B1 (en) | 1995-05-04 | 2003-08-26 | Trw Inc. | Superconductor device |
DE19634645C2 (de) * | 1996-08-27 | 1999-11-11 | Forschungszentrum Juelich Gmbh | Schichtenfolge mit einem hochtemperatursupraleitenden Material und deren Verwendung |
DE19634463A1 (de) * | 1996-08-27 | 1998-03-05 | Forschungszentrum Juelich Gmbh | Schichtenfolge sowie eine solche enthaltendes Bauelement |
US6239431B1 (en) | 1998-11-24 | 2001-05-29 | The United States Of America As Represented By The Secretary Of Commerce | Superconducting transition-edge sensor with weak links |
AU2002241771A1 (en) * | 2000-10-23 | 2002-06-11 | The Trustees Of Columbia University In The City Of New York | Thick film high temperature superconducting device supporting high critical currents and method for fabricating same |
WO2002056318A1 (fr) * | 2001-01-16 | 2002-07-18 | Nippon Steel Corporation | Conducteur de faible resistance, son procede de production et composant electrique utilisant ce conducteur |
US6787798B1 (en) * | 2001-01-17 | 2004-09-07 | The Texas A&M University System | Method and system for storing information using nano-pinned dipole magnetic vortices in superconducting materials |
JP3511098B2 (ja) * | 2001-09-14 | 2004-03-29 | 独立行政法人産業技術総合研究所 | 超高速光電気信号変換素子 |
US6635368B1 (en) | 2001-12-20 | 2003-10-21 | The United States Of America As Represented By The Secretary Of The Navy | HTS film-based electronic device characterized by low ELF and white noise |
US20040074533A1 (en) * | 2002-10-21 | 2004-04-22 | Hongjun Pan | Superconductor-semiconductor solar cells and light detectors |
FI20080124L (fi) * | 2008-02-15 | 2009-08-16 | Teknillinen Korkeakoulu | Läheis-Josephson-ilmaisin |
US8674302B2 (en) * | 2009-06-01 | 2014-03-18 | The United States Of America As Represented By The Administrator Of The National Aeronautics Space Administration | Superconducting transition edge sensors and methods for design and manufacture thereof |
US8644898B1 (en) * | 2012-05-01 | 2014-02-04 | The United States Of America As Represented By The Secretary Of The Navy | Superconductor device having a pattern of engineered defects for controlling magnetic flux |
FR3011389B1 (fr) * | 2013-10-01 | 2015-10-30 | Thales Sa | Procede de fabrication d'une jonction josephson et jonction josepson associee |
US11723579B2 (en) | 2017-09-19 | 2023-08-15 | Neuroenhancement Lab, LLC | Method and apparatus for neuroenhancement |
US11717686B2 (en) | 2017-12-04 | 2023-08-08 | Neuroenhancement Lab, LLC | Method and apparatus for neuroenhancement to facilitate learning and performance |
CN108083799A (zh) * | 2017-12-21 | 2018-05-29 | 叶芳 | 一种新能源用超导材料及其制备方法 |
WO2019133997A1 (en) | 2017-12-31 | 2019-07-04 | Neuroenhancement Lab, LLC | System and method for neuroenhancement to enhance emotional response |
US11364361B2 (en) | 2018-04-20 | 2022-06-21 | Neuroenhancement Lab, LLC | System and method for inducing sleep by transplanting mental states |
US11452839B2 (en) | 2018-09-14 | 2022-09-27 | Neuroenhancement Lab, LLC | System and method of improving sleep |
US11786694B2 (en) | 2019-05-24 | 2023-10-17 | NeuroLight, Inc. | Device, method, and app for facilitating sleep |
US11563162B2 (en) * | 2020-01-09 | 2023-01-24 | International Business Machines Corporation | Epitaxial Josephson junction transmon device |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3615881A (en) * | 1968-10-15 | 1971-10-26 | Air Reduction | Method of forming flux pinning sites in a superconducting material by bombardment with an ion beam and the products thereof |
IL47165A (en) * | 1975-04-24 | 1977-10-31 | Univ Ramot | Superconducting quantum interference device and measuring apparatus including same |
US4131496A (en) * | 1977-12-15 | 1978-12-26 | Rca Corp. | Method of making silicon on sapphire field effect transistors with specifically aligned gates |
JPS56109824A (en) * | 1980-02-05 | 1981-08-31 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of oxide superconductive thin film |
JPS5666080A (en) * | 1979-11-05 | 1981-06-04 | Nippon Telegr & Teleph Corp <Ntt> | Tunnel-junction type josephson element and manufacture thereof |
US4316785A (en) * | 1979-11-05 | 1982-02-23 | Nippon Telegraph & Telephone Public Corporation | Oxide superconductor Josephson junction and fabrication method therefor |
US4589001A (en) * | 1980-07-09 | 1986-05-13 | Agency Of Industrial Science & Technology | Quasiparticle injection control type superconducting device |
US4358783A (en) * | 1980-09-30 | 1982-11-09 | Bell Telephone Laboratories, Incorporated | Superconducting thin films |
US4395813A (en) * | 1980-10-22 | 1983-08-02 | Hughes Aircraft Company | Process for forming improved superconductor/semiconductor junction structures |
JPS57106186A (en) * | 1980-12-24 | 1982-07-01 | Fujitsu Ltd | Josephson element |
JPS6030114B2 (ja) * | 1982-02-18 | 1985-07-15 | 理化学研究所 | ジヨセフソン接合光検出素子 |
JPS5952885A (ja) * | 1982-09-20 | 1984-03-27 | Agency Of Ind Science & Technol | ス−パ・シヨツトキ・トランジスタおよびその製造方法 |
JPS59182586A (ja) * | 1983-04-01 | 1984-10-17 | Nippon Telegr & Teleph Corp <Ntt> | ジヨセフソン接合素子 |
JPS59210677A (ja) * | 1983-05-14 | 1984-11-29 | Nippon Telegr & Teleph Corp <Ntt> | ジヨセフソン接合を用いた光検出素子 |
EP0160456B1 (de) * | 1984-04-19 | 1996-07-17 | Hitachi, Ltd. | Supraleitende Anordnung |
JPS6120377A (ja) * | 1984-07-09 | 1986-01-29 | Hitachi Ltd | 超電導回路 |
JPS6135574A (ja) * | 1984-07-27 | 1986-02-20 | Hitachi Ltd | 超電導ホトトランジスタ |
JPH069261B2 (ja) * | 1984-08-03 | 1994-02-02 | 日本電信電話株式会社 | 半導体結合超伝導素子 |
DE3588086T2 (de) * | 1984-11-05 | 1996-09-19 | Hitachi Ltd | Supraleiteranordnung |
JPS61110479A (ja) * | 1984-11-05 | 1986-05-28 | Hitachi Ltd | 超電導トランジスタの構造 |
JPS61158187A (ja) * | 1984-12-28 | 1986-07-17 | Nippon Telegr & Teleph Corp <Ntt> | 超伝導三端子素子及びその製造方法 |
JPS61171179A (ja) * | 1985-01-24 | 1986-08-01 | Nippon Telegr & Teleph Corp <Ntt> | 半導体結合超伝導素子 |
JPS61171180A (ja) * | 1985-01-24 | 1986-08-01 | Nippon Telegr & Teleph Corp <Ntt> | 半導体結合超伝導素子 |
JPH0710007B2 (ja) * | 1985-03-04 | 1995-02-01 | 株式会社日立製作所 | 超電導トランジスタ集積回路 |
JPS61208279A (ja) * | 1985-03-12 | 1986-09-16 | Nippon Telegr & Teleph Corp <Ntt> | 超伝導三端子素子及びその製造方法 |
JPS6257260A (ja) * | 1985-09-06 | 1987-03-12 | Hitachi Ltd | 超電導トランジスタ |
US4831421A (en) * | 1985-10-11 | 1989-05-16 | International Business Machines Corporation | Superconducting device |
JPS6292361A (ja) * | 1985-10-17 | 1987-04-27 | Toshiba Corp | 相補型半導体装置 |
EP0276746B1 (de) * | 1987-01-30 | 1994-07-13 | Hitachi, Ltd. | Supraleiteranordnung |
DE3854358T2 (de) * | 1987-01-30 | 1996-04-18 | Hitachi Ltd | Supraleitendes Oxid. |
KR910002311B1 (ko) * | 1987-02-27 | 1991-04-11 | 가부시기가이샤 히다찌세이사꾸쇼 | 초전도 디바이스 |
DE3855287T2 (de) * | 1987-06-26 | 1996-12-05 | Hitachi Ltd | Supraleitender Draht |
DE3726016A1 (de) * | 1987-08-05 | 1989-02-16 | Siemens Ag | Verfahren zur herstellung eines schichtartigen aufbaus aus einem oxidkeramischen supralteitermaterial |
-
1988
- 1988-02-12 KR KR1019880001355A patent/KR910002311B1/ko not_active IP Right Cessation
- 1988-02-16 US US07/155,806 patent/US5126315A/en not_active Expired - Lifetime
- 1988-02-24 JP JP63039381A patent/JP2907832B2/ja not_active Expired - Fee Related
- 1988-02-25 DE DE3855245T patent/DE3855245T2/de not_active Expired - Fee Related
- 1988-02-25 EP EP95108841A patent/EP0673073B1/de not_active Expired - Lifetime
- 1988-02-25 DE DE3856452T patent/DE3856452T2/de not_active Expired - Fee Related
- 1988-02-25 EP EP88102843A patent/EP0280308B1/de not_active Expired - Lifetime
- 1988-02-27 CN CN88101032A patent/CN1007480B/zh not_active Expired
-
1992
- 1992-03-17 US US07/853,593 patent/US5326745A/en not_active Expired - Fee Related
-
1994
- 1994-02-07 US US08/192,573 patent/US5552375A/en not_active Expired - Fee Related
-
1995
- 1995-06-05 US US08/462,356 patent/US5729046A/en not_active Expired - Fee Related
-
1997
- 1997-10-24 US US08/957,732 patent/US6069369A/en not_active Expired - Fee Related
-
1998
- 1998-06-22 JP JP17432598A patent/JP3221403B2/ja not_active Expired - Fee Related
- 1998-06-22 JP JP17432698A patent/JP3275836B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE3855245T2 (de) | 1996-12-05 |
JP3275836B2 (ja) | 2002-04-22 |
EP0280308B1 (de) | 1996-05-01 |
EP0280308A2 (de) | 1988-08-31 |
US5126315A (en) | 1992-06-30 |
JPH1131852A (ja) | 1999-02-02 |
CN1007480B (zh) | 1990-04-04 |
US5552375A (en) | 1996-09-03 |
EP0673073B1 (de) | 2001-01-10 |
US5729046A (en) | 1998-03-17 |
US6069369A (en) | 2000-05-30 |
JP3221403B2 (ja) | 2001-10-22 |
JPS6486574A (en) | 1989-03-31 |
JP2907832B2 (ja) | 1999-06-21 |
DE3855245D1 (de) | 1996-06-05 |
EP0673073A1 (de) | 1995-09-20 |
KR890001210A (ko) | 1989-03-18 |
DE3856452T2 (de) | 2001-08-23 |
KR910002311B1 (ko) | 1991-04-11 |
CN88101032A (zh) | 1988-09-21 |
EP0280308A3 (en) | 1990-12-12 |
JPH1131851A (ja) | 1999-02-02 |
US5326745A (en) | 1994-07-05 |
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