JPS5666080A - Tunnel-junction type josephson element and manufacture thereof - Google Patents
Tunnel-junction type josephson element and manufacture thereofInfo
- Publication number
- JPS5666080A JPS5666080A JP14312679A JP14312679A JPS5666080A JP S5666080 A JPS5666080 A JP S5666080A JP 14312679 A JP14312679 A JP 14312679A JP 14312679 A JP14312679 A JP 14312679A JP S5666080 A JPS5666080 A JP S5666080A
- Authority
- JP
- Japan
- Prior art keywords
- super
- layer
- conducting material
- probeskite
- type oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
Abstract
PURPOSE:To obtain the titled element withstanding the repeated cycles covering normal temperature and a super-low temperature by a method wherein the first and the second super-conducting material layers are composed of the probeskite type oxide shown by BaPb1-XBiXO3 and a barrier layer is composed of a probeskite type oxide containing Ba or Sr. CONSTITUTION:The first belt-shaped super-conducting material layer 2 is formed on a substrate 1 and a tunnel-junction type Josephson element is obtained by bonding the second super-conducting material layer 4 on the end section of said layer 2. To be more precise, the substrate 1 is covered by the first super-conducting material layer 1 consisted of a probeskite type oxide shown by BaPb1-XBiXO3 (0.05<=X<= 0.3) by performing a sputtering and a subsequent heat treatment while the substrate 1 is being cooled, and a barrier layer 3 consisted of a probeskite type oxide of SrPb1-XBiXO3 (0<=X<=0.3) is formed on the end section of the layer 1, while it is being cooled. The second super-conducting material layer 4 is similarly provided on said layer 3.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14312679A JPS5666080A (en) | 1979-11-05 | 1979-11-05 | Tunnel-junction type josephson element and manufacture thereof |
US06/202,640 US4316785A (en) | 1979-11-05 | 1980-10-31 | Oxide superconductor Josephson junction and fabrication method therefor |
FR8023545A FR2469005A1 (en) | 1979-11-05 | 1980-11-04 | JOSEPHSON JUNCTION OF OXIDE-BASED SUPRACONDUCTORS AND ITS MANUFACTURING PROCESS |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14312679A JPS5666080A (en) | 1979-11-05 | 1979-11-05 | Tunnel-junction type josephson element and manufacture thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5666080A true JPS5666080A (en) | 1981-06-04 |
JPS6161555B2 JPS6161555B2 (en) | 1986-12-26 |
Family
ID=15331515
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14312679A Granted JPS5666080A (en) | 1979-11-05 | 1979-11-05 | Tunnel-junction type josephson element and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5666080A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6473777A (en) * | 1987-09-16 | 1989-03-20 | Semiconductor Energy Lab | Formation of non-superconductive oxide film |
JPH0296386A (en) * | 1988-10-03 | 1990-04-09 | Matsushita Electric Ind Co Ltd | Superconducting element |
US5126315A (en) * | 1987-02-27 | 1992-06-30 | Hitachi, Ltd. | High tc superconducting device with weak link between two superconducting electrodes |
JPH05205940A (en) * | 1987-03-20 | 1993-08-13 | Semiconductor Energy Lab Co Ltd | Superconducting device |
US5987731A (en) * | 1987-04-01 | 1999-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Elongated superconductive member |
-
1979
- 1979-11-05 JP JP14312679A patent/JPS5666080A/en active Granted
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5126315A (en) * | 1987-02-27 | 1992-06-30 | Hitachi, Ltd. | High tc superconducting device with weak link between two superconducting electrodes |
US5552375A (en) * | 1987-02-27 | 1996-09-03 | Hitachi, Ltd. | Method for forming high Tc superconducting devices |
US6069369A (en) * | 1987-02-27 | 2000-05-30 | Hitachi, Ltd. | Superconducting device |
JPH05205940A (en) * | 1987-03-20 | 1993-08-13 | Semiconductor Energy Lab Co Ltd | Superconducting device |
JPH0628211B2 (en) * | 1987-03-20 | 1994-04-13 | 株式会社半導体エネルギー研究所 | Superconducting device |
US5987731A (en) * | 1987-04-01 | 1999-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Elongated superconductive member |
JPS6473777A (en) * | 1987-09-16 | 1989-03-20 | Semiconductor Energy Lab | Formation of non-superconductive oxide film |
JPH0296386A (en) * | 1988-10-03 | 1990-04-09 | Matsushita Electric Ind Co Ltd | Superconducting element |
JP2796099B2 (en) * | 1988-10-03 | 1998-09-10 | 松下電器産業株式会社 | Superconducting element |
Also Published As
Publication number | Publication date |
---|---|
JPS6161555B2 (en) | 1986-12-26 |
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