DE3855249T2 - Verfahren zur Herstellung eines Siliciumcarbidsubstrats - Google Patents

Verfahren zur Herstellung eines Siliciumcarbidsubstrats

Info

Publication number
DE3855249T2
DE3855249T2 DE3855249T DE3855249T DE3855249T2 DE 3855249 T2 DE3855249 T2 DE 3855249T2 DE 3855249 T DE3855249 T DE 3855249T DE 3855249 T DE3855249 T DE 3855249T DE 3855249 T2 DE3855249 T2 DE 3855249T2
Authority
DE
Germany
Prior art keywords
production
silicon carbide
carbide substrate
substrate
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3855249T
Other languages
English (en)
Other versions
DE3855249D1 (de
Inventor
Hiroshi Gotou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3855249D1 publication Critical patent/DE3855249D1/de
Publication of DE3855249T2 publication Critical patent/DE3855249T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/7602—Making of isolation regions between components between components manufactured in an active substrate comprising SiC compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
DE3855249T 1987-11-20 1988-11-18 Verfahren zur Herstellung eines Siliciumcarbidsubstrats Expired - Fee Related DE3855249T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62294617A JPH067594B2 (ja) 1987-11-20 1987-11-20 半導体基板の製造方法

Publications (2)

Publication Number Publication Date
DE3855249D1 DE3855249D1 (de) 1996-06-05
DE3855249T2 true DE3855249T2 (de) 1996-08-14

Family

ID=17810076

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3855249T Expired - Fee Related DE3855249T2 (de) 1987-11-20 1988-11-18 Verfahren zur Herstellung eines Siliciumcarbidsubstrats

Country Status (5)

Country Link
US (1) US4983538A (de)
EP (1) EP0317445B1 (de)
JP (1) JPH067594B2 (de)
KR (1) KR910009609B1 (de)
DE (1) DE3855249T2 (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5241211A (en) * 1989-12-20 1993-08-31 Nec Corporation Semiconductor device
JPH04365377A (ja) * 1991-06-13 1992-12-17 Agency Of Ind Science & Technol 半導体装置
JPH0574669A (ja) * 1991-09-18 1993-03-26 Rohm Co Ltd 半導体装置の製造方法
JP3058954B2 (ja) * 1991-09-24 2000-07-04 ローム株式会社 絶縁層の上に成長層を有する半導体装置の製造方法
US5366924A (en) * 1992-03-16 1994-11-22 At&T Bell Laboratories Method of manufacturing an integrated circuit including planarizing a wafer
US5334281A (en) * 1992-04-30 1994-08-02 International Business Machines Corporation Method of forming thin silicon mesas having uniform thickness
US5234846A (en) * 1992-04-30 1993-08-10 International Business Machines Corporation Method of making bipolar transistor with reduced topography
US5258318A (en) * 1992-05-15 1993-11-02 International Business Machines Corporation Method of forming a BiCMOS SOI wafer having thin and thick SOI regions of silicon
US5349207A (en) * 1993-02-22 1994-09-20 Texas Instruments Incorporated Silicon carbide wafer bonded to a silicon wafer
US5465680A (en) * 1993-07-01 1995-11-14 Dow Corning Corporation Method of forming crystalline silicon carbide coatings
US5354717A (en) * 1993-07-29 1994-10-11 Motorola, Inc. Method for making a substrate structure with improved heat dissipation
US5415126A (en) * 1993-08-16 1995-05-16 Dow Corning Corporation Method of forming crystalline silicon carbide coatings at low temperatures
US5378912A (en) * 1993-11-10 1995-01-03 Philips Electronics North America Corporation Lateral semiconductor-on-insulator (SOI) semiconductor device having a lateral drift region
US6171931B1 (en) * 1994-12-15 2001-01-09 Sgs-Thomson Microelectronics S.R.L. Wafer of semiconductor material for fabricating integrated devices, and process for its fabrication
US5563428A (en) * 1995-01-30 1996-10-08 Ek; Bruce A. Layered structure of a substrate, a dielectric layer and a single crystal layer
US5759908A (en) * 1995-05-16 1998-06-02 University Of Cincinnati Method for forming SiC-SOI structures
US6144546A (en) * 1996-12-26 2000-11-07 Kabushiki Kaisha Toshiba Capacitor having electrodes with two-dimensional conductivity
SE9700215L (sv) * 1997-01-27 1998-02-18 Abb Research Ltd Förfarande för framställning av ett halvledarskikt av SiC av 3C-polytypen ovanpå ett halvledarsubstratskikt utnyttjas wafer-bindningstekniken
JP3958404B2 (ja) 1997-06-06 2007-08-15 三菱電機株式会社 横型高耐圧素子を有する半導体装置
FR2765398B1 (fr) * 1997-06-25 1999-07-30 Commissariat Energie Atomique Structure a composant microelectronique en materiau semi-conducteur difficile a graver et a trous metallises
FR2781082B1 (fr) * 1998-07-10 2002-09-20 Commissariat Energie Atomique Structure semiconductrice en couche mince comportant une couche de repartition de chaleur
US20020089016A1 (en) 1998-07-10 2002-07-11 Jean-Pierre Joly Thin layer semi-conductor structure comprising a heat distribution layer
US6903373B1 (en) * 1999-11-23 2005-06-07 Agere Systems Inc. SiC MOSFET for use as a power switch and a method of manufacturing the same
EP1277240B1 (de) * 2000-04-26 2015-05-20 OSRAM Opto Semiconductors GmbH Verfahren zur Herstellung eines lichtmittierenden Halbleiterbauelements
DE10051465A1 (de) * 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
EP1277241B1 (de) * 2000-04-26 2017-12-13 OSRAM Opto Semiconductors GmbH Lumineszenzdiodenchip auf der basis von gan
TWI292227B (en) * 2000-05-26 2008-01-01 Osram Opto Semiconductors Gmbh Light-emitting-dioed-chip with a light-emitting-epitaxy-layer-series based on gan
US6689669B2 (en) * 2001-11-03 2004-02-10 Kulite Semiconductor Products, Inc. High temperature sensors utilizing doping controlled, dielectrically isolated beta silicon carbide (SiC) sensing elements on a specifically selected high temperature force collecting membrane
FR2837322B1 (fr) * 2002-03-14 2005-02-04 Commissariat Energie Atomique DIODE SCHOTTKY DE PUISSANCE A SUBSTRAT SiCOI, ET PROCEDE DE REALISATION D'UN TELLE DIODE
US8529724B2 (en) * 2003-10-01 2013-09-10 The Charles Stark Draper Laboratory, Inc. Anodic bonding of silicon carbide to glass
US7115182B2 (en) 2004-06-15 2006-10-03 Agency For Science, Technology And Research Anodic bonding process for ceramics
JP2009280484A (ja) * 2008-04-24 2009-12-03 Sumitomo Electric Ind Ltd Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材の製造方法、エピタキシャルウエハの製造方法、Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材およびエピタキシャルウエハ
JP2009280903A (ja) 2008-04-24 2009-12-03 Sumitomo Electric Ind Ltd Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材の製造方法、エピタキシャルウエハの製造方法、Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材およびエピタキシャルウエハ
JP5621199B2 (ja) * 2008-04-24 2014-11-05 住友電気工業株式会社 Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材の製造方法、エピタキシャルウエハの製造方法、Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材およびエピタキシャルウエハ
JP2010251724A (ja) 2009-03-26 2010-11-04 Semiconductor Energy Lab Co Ltd 半導体基板の作製方法
US8513090B2 (en) 2009-07-16 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor substrate, and semiconductor device
US9349804B2 (en) * 2013-02-12 2016-05-24 Infineon Technologies Ag Composite wafer for bonding and encapsulating an SiC-based functional layer
CN103991840B (zh) * 2014-05-21 2016-01-13 北京遥测技术研究所 一种用于超高温环境下的SiC绝压腔制备方法
JP6500378B2 (ja) * 2014-09-22 2019-04-17 株式会社Sumco 貼合せＳｉＣウェーハの製造方法及び貼合せＳｉＣウェーハ
JP6743963B2 (ja) * 2017-03-02 2020-08-19 信越化学工業株式会社 炭化珪素基板の製造方法及び炭化珪素基板
JP7162833B2 (ja) * 2018-08-01 2022-10-31 国立研究開発法人物質・材料研究機構 半導体装置の製造方法

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4139401A (en) * 1963-12-04 1979-02-13 Rockwell International Corporation Method of producing electrically isolated semiconductor devices on common crystalline substrate
US3400309A (en) * 1965-10-18 1968-09-03 Ibm Monolithic silicon device containing dielectrically isolatng film of silicon carbide
GB1224803A (en) * 1967-03-01 1971-03-10 Sony Corp Semiconductor devices
US3508980A (en) * 1967-07-26 1970-04-28 Motorola Inc Method of fabricating an integrated circuit structure with dielectric isolation
US3577285A (en) * 1968-03-28 1971-05-04 Ibm Method for epitaxially growing silicon carbide onto a crystalline substrate
US3571919A (en) * 1968-09-25 1971-03-23 Texas Instruments Inc Semiconductor device fabrication
GB1288278A (de) * 1968-12-31 1972-09-06
US3900943A (en) * 1973-06-07 1975-08-26 Dow Corning Silicon semiconductor device array and method of making same
DE2332822B2 (de) * 1973-06-28 1978-04-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen von diffundierten, kontaktierten und oberflächenpassivierten Halbleiterbauelementen aus Halbleiterscheiben aus Silizium
US3956032A (en) * 1974-09-24 1976-05-11 The United States Of America As Represented By The United States National Aeronautics And Space Administration Process for fabricating SiC semiconductor devices
US3936329A (en) * 1975-02-03 1976-02-03 Texas Instruments Incorporated Integral honeycomb-like support of very thin single crystal slices
JPS5283164A (en) * 1975-12-30 1977-07-11 Seiko Epson Corp Production of thin film semiconductor substrate
JPS605070B2 (ja) * 1976-06-29 1985-02-08 三菱電機株式会社 Ｍｏｓ構造電界効果半導体デバイスの製造方法
US4028149A (en) * 1976-06-30 1977-06-07 Ibm Corporation Process for forming monocrystalline silicon carbide on silicon substrates
US4066483A (en) * 1976-07-07 1978-01-03 Western Electric Company, Inc. Gate-controlled bidirectional switching device
DE2638270C2 (de) * 1976-08-25 1983-01-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung großflächiger, freitragender Platten aus Silicium
JPS6014000B2 (ja) * 1977-05-25 1985-04-10 シャープ株式会社 炭化硅素基板の製造方法
JPS53146300A (en) * 1977-05-25 1978-12-20 Sharp Corp Production of silicon carbide substrate
JPS5443200A (en) * 1977-09-13 1979-04-05 Sharp Corp Production of silicon carbide substrate
NL7710164A (nl) * 1977-09-16 1979-03-20 Philips Nv Werkwijze ter behandeling van een eenkristal- lijn lichaam.
JPS6045159B2 (ja) * 1978-02-03 1985-10-08 シャープ株式会社 炭化珪素結晶層の製造方法
JPS5838400B2 (ja) * 1979-04-28 1983-08-23 シャープ株式会社 炭化珪素結晶層の製造方法
JPS5838399B2 (ja) * 1979-04-26 1983-08-23 シャープ株式会社 炭化珪素結晶層の製造方法
US4582561A (en) * 1979-01-25 1986-04-15 Sharp Kabushiki Kaisha Method for making a silicon carbide substrate
JPS55149192A (en) * 1979-05-07 1980-11-20 Sharp Corp Manufacture of silicon carbide crystal layer
JPS56137617A (en) * 1980-03-28 1981-10-27 Sharp Corp Semiconductor crystal substrate
JPS5825280A (ja) * 1982-07-19 1983-02-15 Hitachi Ltd 光電変換用受光面
JPS5946648A (ja) * 1982-09-10 1984-03-16 Nippon Telegr & Teleph Corp <Ntt> メンブレンの製造方法
JPS5998533A (ja) * 1982-11-26 1984-06-06 Hitachi Ltd 半導体基板およびその製造方法
JPS60150621A (ja) * 1984-01-18 1985-08-08 Sanyo Electric Co Ltd ＳｉＣ半導体装置用基板
JPS60186066A (ja) * 1984-03-05 1985-09-21 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型電界効果半導体装置およびその作製方法
JPS60186012A (ja) * 1984-03-06 1985-09-21 Sumitomo Electric Ind Ltd 半導体装置の製造方法
JPS6173345A (ja) * 1984-09-19 1986-04-15 Toshiba Corp 半導体装置
JPS61142753A (ja) * 1984-12-17 1986-06-30 Toshiba Corp 複合半導体基板の製造方法
US4601779A (en) * 1985-06-24 1986-07-22 International Business Machines Corporation Method of producing a thin silicon-on-insulator layer
JP2615390B2 (ja) * 1985-10-07 1997-05-28 工業技術院長 炭化シリコン電界効果トランジスタの製造方法
KR910003169B1 (ko) * 1985-11-12 1991-05-20 가부시끼가이샤 한도다이 에네르기 겐뀨소 반도체 장치 제조 방법 및 장치
JPH0669085B2 (ja) * 1986-09-05 1994-08-31 富士通株式会社 半導体基板の製造方法
JPH0828487B2 (ja) * 1986-12-16 1996-03-21 富士通株式会社 半導体装置の製造方法
JPS63222447A (ja) * 1987-03-11 1988-09-16 Sony Corp 半導体基板
JPS63226042A (ja) * 1987-03-13 1988-09-20 Fujitsu Ltd 半導体装置の製造方法
GB2206445A (en) * 1987-07-01 1989-01-05 Spectrol Reliance Ltd Method of manufacturing dielectrically isolated integrated circuits and circuit elements
JPH0199457A (ja) * 1987-10-12 1989-04-18 Seiko Epson Corp ヒステリシスモータの回転子
JP2692091B2 (ja) * 1987-10-31 1997-12-17 株式会社日本自動車部品総合研究所 炭化ケイ素半導体膜およびその製造方法
JP2534525B2 (ja) * 1987-12-19 1996-09-18 富士通株式会社 β−炭化シリコン層の製造方法
US4855075A (en) * 1988-03-14 1989-08-08 Sandoz Ltd. Ethoxylates of alkyl and alkenyl catechols

Also Published As

Publication number Publication date
EP0317445A2 (de) 1989-05-24
US4983538A (en) 1991-01-08
EP0317445A3 (en) 1990-01-10
JPH01135070A (ja) 1989-05-26
EP0317445B1 (de) 1996-05-01
DE3855249D1 (de) 1996-06-05
JPH067594B2 (ja) 1994-01-26
KR890008951A (ko) 1989-07-13
KR910009609B1 (ko) 1991-11-23

Similar Documents

Publication Publication Date Title
DE3855249D1 (de) Verfahren zur Herstellung eines Siliciumcarbidsubstrats
DE3886605D1 (de) Verfahren zur Herstellung eines keramischen Mehrschichtsubstrats.
DE58906873D1 (de) Verfahren zur Herstellung eines flexiblen Trägersubstrates.
DE69120326D1 (de) Verfahren zur Herstellung eines Siliziumeinkristalles
DE69518548T2 (de) Verfahren zur Herstellung eines keramischen Substrates
DE69314717T2 (de) Verfahren zur Herstellung polykristalliner Siliciumcarbid-Fiber
DE69125118D1 (de) Verfahren zur Herstellung eines Diamant-Überzuges
DE68926914D1 (de) Verfahren zur Herstellung eines oberflächenbeschichtetes zementiertes Karbides
DE3782979T4 (de) Verfahren zur Herstellung eines verglasten Produkts.
DE3856135T2 (de) Verfahren zur Oberflächenbehandlung eines Halbleiterplättchens
DE68913429D1 (de) Verfahren zur Herstellung von Silicium-Einkristallen.
DE59304593D1 (de) Verfahren zur Herstellung eines Bauelementes mit porösem Silizium
DE69526286D1 (de) Verfahren zur Herstellung eines keramischen Substrates
DE59009414D1 (de) Verfahren zur Herstellung eines Laserwafers.
DE3889398T2 (de) Verfahren zur Herstellung eines Supraleiters.
DE69325350D1 (de) Verfahren zur Herstellung von Siliciumcarbidfasern
DE69028450D1 (de) Verfahren zur Herstellung von polykristallinen Siliziumkontakten
DE69032340T2 (de) Verfahren zur Herstellung einer Halbleiterdünnschicht
DE69402024T2 (de) Verfahren zur Herstellung eines Diamanthalbleiters
DE3885634T2 (de) Verfahren zur Herstellung eines keramischen Supraleiters.
DE69301035D1 (de) Verfahren zur Herstellung eines Silizium-Einkristalls
DE59003516D1 (de) Verfahren zur Herstellung polykristalliner Diamantschichten.
DE68927412T2 (de) Verfahren zur Herstellung eines keramischen Gegenstandes
DE58908463D1 (de) Verfahren zur Herstellung eines Aufzeichnungsträgers.
DE69031802D1 (de) Verfahren zur Herstellung gerillter Substrate

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee