GB1224803A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1224803A
GB1224803A GB40776/70A GB4077670A GB1224803A GB 1224803 A GB1224803 A GB 1224803A GB 40776/70 A GB40776/70 A GB 40776/70A GB 4077670 A GB4077670 A GB 4077670A GB 1224803 A GB1224803 A GB 1224803A
Authority
GB
United Kingdom
Prior art keywords
semi
layers
recess
conductor
support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB40776/70A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB1224803A publication Critical patent/GB1224803A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)

Abstract

1,224,803. Semi-conductor devices. SONY CORP. 26 Feb., 1968 [1 March, 1967 (5)], No. 40776/70. Divided out of 1,224,801. Heading HlK. The subject-matter of this Specification is entirely contained in Specification 1,224,801 but the claims relate to a semi-conductor device comprising a support having a recess in a surface thereof with two sequentially vapour grown semi-conductor layers in said recess lying parallel to its sides and bottom, with semiconductor material filling the portion of the recess surrounded by the layers. The effective width of at least one of the layers at its exposed cross-section at the support surface is greater than the thickness of the bottom portion of that layer in order to facilitate attachment of an electrode thereto.
GB40776/70A 1967-03-01 1968-02-26 Semiconductor devices Expired GB1224803A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP1301667 1967-03-01
JP1301467 1967-03-01
JP1301367 1967-03-01
JP1301767 1967-03-01
JP1301567 1967-03-01

Publications (1)

Publication Number Publication Date
GB1224803A true GB1224803A (en) 1971-03-10

Family

ID=27519466

Family Applications (2)

Application Number Title Priority Date Filing Date
GB40776/70A Expired GB1224803A (en) 1967-03-01 1968-02-26 Semiconductor devices
GB9240/68A Expired GB1224801A (en) 1967-03-01 1968-02-26 Methods of manufacturing semiconductor devices

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB9240/68A Expired GB1224801A (en) 1967-03-01 1968-02-26 Methods of manufacturing semiconductor devices

Country Status (3)

Country Link
US (1) US3575731A (en)
DE (1) DE1639418A1 (en)
GB (2) GB1224803A (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5718341B2 (en) * 1974-12-11 1982-04-16
DE2658304C2 (en) * 1975-12-24 1984-12-20 Tokyo Shibaura Electric Co., Ltd., Kawasaki, Kanagawa Semiconductor device
US4161743A (en) * 1977-03-28 1979-07-17 Tokyo Shibaura Electric Co., Ltd. Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat
US4104086A (en) * 1977-08-15 1978-08-01 International Business Machines Corporation Method for forming isolated regions of silicon utilizing reactive ion etching
US4636269A (en) * 1983-11-18 1987-01-13 Motorola Inc. Epitaxially isolated semiconductor device process utilizing etch and refill technique
US4804866A (en) * 1986-03-24 1989-02-14 Matsushita Electric Works, Ltd. Solid state relay
US4902641A (en) * 1987-07-31 1990-02-20 Motorola, Inc. Process for making an inverted silicon-on-insulator semiconductor device having a pedestal structure
US4786615A (en) * 1987-08-31 1988-11-22 Motorola Inc. Method for improved surface planarity in selective epitaxial silicon
US4876212A (en) * 1987-10-01 1989-10-24 Motorola Inc. Process for fabricating complimentary semiconductor devices having pedestal structures
JPH067594B2 (en) * 1987-11-20 1994-01-26 富士通株式会社 Method for manufacturing semiconductor substrate
US5278083A (en) * 1992-10-16 1994-01-11 Texas Instruments Incorporated Method for making reliable connections to small features of integrated circuits
FR2816113A1 (en) * 2000-10-31 2002-05-03 St Microelectronics Sa METHOD FOR PRODUCING A DOPED AREA IN SILICON CARBIDE AND APPLICATION TO A SCHOTTKY DIODE

Also Published As

Publication number Publication date
US3575731A (en) 1971-04-20
GB1224801A (en) 1971-03-10
DE1639418A1 (en) 1971-02-04

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