ES272455A1 - Procedure for the formation of semiconductor bodies (Machine-translation by Google Translate, not legally binding) - Google Patents

Procedure for the formation of semiconductor bodies (Machine-translation by Google Translate, not legally binding)

Info

Publication number
ES272455A1
ES272455A1 ES272455A ES272455A ES272455A1 ES 272455 A1 ES272455 A1 ES 272455A1 ES 272455 A ES272455 A ES 272455A ES 272455 A ES272455 A ES 272455A ES 272455 A1 ES272455 A1 ES 272455A1
Authority
ES
Spain
Prior art keywords
semiconductor
translation
formation
conductivity type
machine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES272455A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck and Co Inc
Original Assignee
Merck and Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck and Co Inc filed Critical Merck and Co Inc
Publication of ES272455A1 publication Critical patent/ES272455A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

Process for the formation of elongated monocrystalline semiconductor bodies containing at least two semiconductor layers of large crystallographically oriented surface, with different types of conductivity, separated by a transition zone, which consists of exposing a flat surface of an initial semiconductor elongated element, of predicted conductivity type, which adjusts with a margin of 0.5 degrees to a growth plane of predetermined crystallographic orientation; putting said growth plane in contact with a decomposable compound of said semiconductor containing atoms of active impurity of the opposite conductivity type, and thermally decomposing said compound to deposit a monocrystalline layer of the semiconductor and of the active impurity atoms of the opposite conductivity type on the aforementioned growth plane. (Machine-translation by Google Translate, not legally binding)
ES272455A 1960-11-29 1961-11-14 Procedure for the formation of semiconductor bodies (Machine-translation by Google Translate, not legally binding) Expired ES272455A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7234460A 1960-11-29 1960-11-29

Publications (1)

Publication Number Publication Date
ES272455A1 true ES272455A1 (en) 1962-03-01

Family

ID=22106995

Family Applications (1)

Application Number Title Priority Date Filing Date
ES272455A Expired ES272455A1 (en) 1960-11-29 1961-11-14 Procedure for the formation of semiconductor bodies (Machine-translation by Google Translate, not legally binding)

Country Status (7)

Country Link
AT (1) AT243317B (en)
BE (1) BE610469A (en)
CH (1) CH397875A (en)
DE (1) DE1419716B2 (en)
ES (1) ES272455A1 (en)
GB (1) GB990119A (en)
SE (1) SE305201B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7772097B2 (en) 2007-11-05 2010-08-10 Asm America, Inc. Methods of selectively depositing silicon-containing films
CN112626615A (en) * 2020-12-09 2021-04-09 黄梦蕾 Silicon epitaxial growth diffusion auxiliary equipment for semiconductor discrete device

Also Published As

Publication number Publication date
DE1419716A1 (en) 1968-10-10
GB990119A (en) 1965-04-28
SE305201B (en) 1968-10-21
DE1419716B2 (en) 1971-12-16
BE610469A (en) 1962-05-17
AT243317B (en) 1965-11-10
CH397875A (en) 1965-08-31

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