CN112626615A - Silicon epitaxial growth diffusion auxiliary equipment for semiconductor discrete device - Google Patents
Silicon epitaxial growth diffusion auxiliary equipment for semiconductor discrete device Download PDFInfo
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- CN112626615A CN112626615A CN202011449293.3A CN202011449293A CN112626615A CN 112626615 A CN112626615 A CN 112626615A CN 202011449293 A CN202011449293 A CN 202011449293A CN 112626615 A CN112626615 A CN 112626615A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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Abstract
The invention relates to the technical field of manufacturing of semiconductor separators and discloses silicon epitaxial growth diffusion auxiliary equipment for a semiconductor separator. This semiconductor is epitaxial growth diffusion auxiliary assembly of silicon for discrete device, and then produce silicon and hydrogen chloride through the reaction of silicon tetrachloride and hydrogen, thereby this process is accomplished under the cooperation of mediation ring, at the in-process of accomplishing, the reaction of silicon tetrachloride and hydrogen can be under the treatment of the induced current of ion storehouse inside, thereby make the silicon material of production attached with charged particle, thereby make the silicon material attached with charged particle, through the transmission of pipe, the top of the inboard substrate of messenger's fixed plate deposits silicon material, thereby the impurity that artificial mediation probably produced has been reduced, thereby the harmony degree that makes silicon material risees.
Description
Technical Field
The invention relates to the technical field of manufacturing of semiconductor separators, in particular to silicon epitaxial growth diffusion auxiliary equipment for a semiconductor separator.
Background
Semiconductor crystal diodes, also called semiconductor discrete devices, have begun to develop rapidly with the market demands as electronic machines, consumer electronics and microelectronics have developed rapidly, and they rely primarily on PN junctions to operate for signal control and amplification.
The semiconductor crystal diode is divided into germanium, silicon material and the like according to different manufacturing materials, wherein the silicon material is mainly produced by adopting a silicon gas phase epitaxy method to produce the diode, namely, a high-resistance epitaxial layer grows on a substrate with low resistivity, and a device is manufactured on the epitaxial layer.
Aiming at the problems, the invention provides silicon epitaxial growth diffusion auxiliary equipment for a semiconductor discrete device, which has the advantages of less impurity interference and good epitaxial effect.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides silicon epitaxial growth diffusion auxiliary equipment for a semiconductor separator, which has the advantages of less impurity interference and good epitaxial effect and solves the problems of more impurity interference and poor epitaxial effect.
(II) technical scheme
In order to solve the technical problems, the invention provides the following technical scheme:
a silicon epitaxial growth diffusion auxiliary device for a semiconductor separator comprises a diffusion auxiliary mechanism, wherein a substrate is arranged in the center of the diffusion auxiliary mechanism, a fixed plate is movably connected to the outer side of the substrate, a connecting piece is movably connected to the outer side of the fixed plate, a guide pipe is fixedly connected to the top of the fixed plate, an annular pipe is fixedly connected to the top of the guide pipe, a mixing ring is movably connected to the top of the annular pipe, an ion bin is arranged inside the mixing ring, a rotating shaft is movably connected to the inside of the ion bin, a stirring plate is fixedly connected to the outer side of the rotating shaft, a magnet is arranged on the outer side of the stirring plate, an arc pipe is fixedly connected to the top of the mixing ring, an air pipe is fixedly connected to the outer side of the arc pipe, a supporting column is movably connected to the inner side of the air pipe, a spring is movably connected, the top fixedly connected with liquid storehouse of special pipe, the inside of liquid storehouse is rotated and is connected with the rotation wheel, and the top swing joint who rotates the wheel has silicon storehouse, and the inside swing joint in silicon storehouse has the spin, and the outside of spin is equipped with the shower nozzle.
Preferably, the number of the fixing plates is four, and the four fixing plates are uniformly distributed on the outer side of the substrate.
Preferably, the number of the fixing plates is the same as that of the guide tubes, and the fixing plates are movably connected with the ring tube through the guide tubes.
Preferably, the number of the ion bins is three, and the three ion bins are uniformly distributed in the interior of the harmonic ring.
Preferably, the number of the stirring plates is three, and the three stirring plates are uniformly distributed on the outer side of the rotating shaft.
Preferably, the left and right sides of hydrogen fan all is equipped with the support column, and hydrogen fan evenly distributed is in the outside of mediation ring.
Preferably, silicon tetrachloride is arranged inside the silicon bin, and the number of the rolling balls is twice that of the silicon bin.
(III) advantageous effects
Compared with the prior art, the invention provides silicon epitaxial growth diffusion auxiliary equipment for a semiconductor separator, which has the following beneficial effects:
1. this semiconductor is epitaxial growth diffusion auxiliary assembly of silicon for discrete device, and then produce silicon and hydrogen chloride through the reaction of silicon tetrachloride and hydrogen, thereby this process is accomplished under the cooperation of mediation ring, at the in-process of accomplishing, the reaction of silicon tetrachloride and hydrogen can be under the treatment of the induced current of ion storehouse inside, thereby make the silicon material of production attached with charged particle, thereby make the silicon material attached with charged particle, through the transmission of pipe, the top of the inboard substrate of messenger's fixed plate deposits silicon material, thereby the impurity that artificial mediation probably produced has been reduced, thereby the harmony degree that makes silicon material risees.
2. This silicon epitaxial growth diffusion auxiliary assembly is used to semiconductor discrete device, the inside of fixed plate is arranged in through the substrate that will handle, thereby make and rotate the wheel and get the electricity, thereby make and rotate the wheel and be getting under the rotatory circumstances of electricity, make spin extrusion silicon storehouse, thereby make the inside silicon tetrachloride of silicon storehouse flow out, thereby the transmission through special-shaped pipe and arc tube, make silicon tetrachloride inflow mediation ring, hydrogen fan can send into hydrogen mediation ring through the tuber pipe this moment, thereby make the inside board of stirring in ion storehouse under the drive that hydrogen flows, make and stir the board and do the motion of cutting magnetism sense line and produce induced-current inside the ion storehouse, thereby make and stir the board and handle the reaction of silicon tetrachloride and hydrogen, thereby make the reaction of silicon tetrachloride and hydrogen faster, and make the reaction silicon electricity of silicon tetrachloride and hydrogen.
Drawings
FIG. 1 is a schematic view of the diffusion aid attachment of the present invention.
Fig. 2 is an enlarged schematic view of a portion a in fig. 1.
Fig. 3 is an enlarged schematic view of a portion B in fig. 1.
Fig. 4 is an enlarged schematic structural view of a portion C in fig. 1.
FIG. 5 is a schematic view of the substrate wrapping mechanism attachment of the present invention.
In the figure: 1. a diffusion assistance mechanism; 2. a substrate; 3. a fixing plate; 4. a connecting member; 5. a conduit; 6. a ring pipe; 7. a harmonic ring; 8. an ion bin; 9. a rotating shaft; 10. a stirring plate; 11. a magnet; 12. an arc tube; 13. an air duct; 14. a support pillar; 15. a spring; 16. a hydrogen fan; 17. a rectifying ball; 18. a special-shaped pipe; 19. a liquid bin; 20. a rotating wheel; 21. a silicon bin; 22. rolling a ball; 23. and (4) a spray head.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-5, an auxiliary device for silicon epitaxial growth diffusion for a semiconductor discrete device comprises a diffusion auxiliary mechanism 1, a substrate 2 is arranged in the center of the diffusion auxiliary mechanism 1, a fixing plate 3 is movably connected to the outer side of the substrate 2, a connecting piece 4 is movably connected to the outer side of the fixing plate 3, a guide pipe 5 is fixedly connected to the top of the fixing plate 3, a ring pipe 6 is fixedly connected to the top of the guide pipe 5, a regulating ring 7 is movably connected to the top of the ring pipe 6, and an ion bin 8 is arranged inside the regulating ring 7.
The inside swing joint in ion storehouse 8 has pivot 9, and the outside fixedly connected with of pivot 9 stirs board 10, stirs the outside of board 10 and is equipped with magnet 11, the top fixedly connected with arc tube 12 of mediation ring 7, the outside fixedly connected with tuber pipe 13 of arc tube 12, the inboard swing joint of tuber pipe 13 has support column 14, the bottom swing joint of support column 14 has spring 15, the inboard swing joint of tuber pipe 13 has hydrogen fan 16.
The top fixedly connected with rectification ball 17 of arc pipe 12, the outside fixedly connected with special pipe 18 of rectification ball 17, the top fixedly connected with liquid storehouse 19 of special pipe 18, the inside of liquid storehouse 19 rotates and is connected with runner 20, the top swing joint of runner 20 has silicon storehouse 21, the inside swing joint of silicon storehouse 21 has spin 22, the outside of spin 22 is equipped with shower nozzle 23.
Wherein, the quantity of fixed plate 3 is four, and four fixed plate 3 evenly distributed are in the outside of substrate 2, and all connect through spring 15 between per two fixed plate 3 to be convenient for fixed plate 3 adapts to the size of substrate 2 under the cooperation of spring 15.
Wherein, the number of the fixing plate 3 is the same as that of the guide pipe 5, the fixing plate 3 is movably connected with the ring pipe 6 through the guide pipe 5, and the outer side of the ring pipe 6 is provided with a through hole, so that the adjusting ring 7 can spray the adjusted liquid to the surface of the substrate 2.
Wherein, the number of ion storehouse 8 is three, and three ion storehouse 8 evenly distributed is in the inside of mediation ring 7 to be convenient for ion storehouse 8 to carry out ion treatment in mediation storehouse 7 inside.
Wherein, stir the figure of board 10 and be three, and three stir board 10 evenly distributed in the outside of pivot 9, and stir the outside of board 10 and evenly twine and have the coil to be convenient for stir the steady operation of board 10.
Wherein, the left and right sides of hydrogen fan 16 all is equipped with support column 14, and 16 evenly distributed of hydrogen fan are in the outside of mediation ring 7 to the hydrogen fan 16 of being convenient for leads to the hydrogen processing to mediation ring 7.
Wherein, silicon tetrachloride is arranged in the silicon bin 21, and the number of the rolling balls 22 is twice of the number of the silicon bin 21, so that the rolling balls 22 can extrude the silicon bin 21 to make the silicon tetrachloride flow out.
SiCL4+2H2＝Si+4HCL
In use, silicon and hydrogen chloride are generated through the reaction of silicon tetrachloride and hydrogen, so that the process is completed under the coordination of the harmonic ring 7, in the completed process, the reaction of the silicon tetrachloride and the hydrogen is processed by induced current inside the ion bin 8, so that the generated silicon material is attached with charged particles, and the silicon material attached with the charged particles is transferred through the guide pipe 5, so that the silicon material is deposited above the substrate 2 on the inner side of the fixed plate 3, thereby reducing impurities possibly generated by artificial harmonic, and further improving the harmonic degree of the silicon material.
Specific mediation process is as follows, the inside of fixed plate 3 is arranged in to the substrate 2 that will handle, thereby make and rotate wheel 20 and get the electricity, thereby make and rotate wheel 20 under the rotatory condition of getting the electricity, make spin 22 extrusion silicon storehouse 21, thereby make the inside silicon tetrachloride of silicon storehouse 21 flow out, thereby pass through the transmission of special pipe 18 and arc tube 12, make silicon tetrachloride flow in and mediate ring 7, hydrogen fan 16 can send into hydrogen through tuber pipe 13 and mediate ring 7 this moment, thereby make the inside stirring board 10 of ion storehouse 8 under the drive that the hydrogen flows, make stirring board 10 do the motion of cutting magnetic induction line and produce induced-current in ion storehouse 8 inside, thereby make stirring board 10 handle the reaction of silicon tetrachloride and hydrogen, thereby make the reaction of silicon tetrachloride and hydrogen faster, and make the reaction silicon of silicon tetrachloride and hydrogen electrified.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (7)
1. A silicon epitaxial growth diffusion auxiliary device for a semiconductor separator comprises a diffusion auxiliary mechanism (1), and is characterized in that: the center of the diffusion auxiliary mechanism (1) is provided with a substrate (2), the outer side of the substrate (2) is movably connected with a fixed plate (3), the outer side of the fixed plate (3) is movably connected with a connecting piece (4), the top of the fixed plate (3) is fixedly connected with a guide pipe (5), the top of the guide pipe (5) is fixedly connected with a ring pipe (6), the top of the ring pipe (6) is movably connected with a mixing ring (7), the inside of the mixing ring (7) is provided with an ion bin (8), the inside of the ion bin (8) is movably connected with a rotating shaft (9), the outer side of the rotating shaft (9) is fixedly connected with a stirring plate (10), the outer side of the stirring plate (10) is provided with a magnet (11), the top of the mixing ring (7) is fixedly connected with an arc pipe (12), the outer side of the arc pipe (12) is fixedly connected with an air pipe (13), the, the inboard swing joint of tuber pipe (13) has hydrogen fan (16), top fixedly connected with rectification ball (17) of arc pipe (12), the outside fixedly connected with special pipe (18) of rectification ball (17), the top fixedly connected with liquid storehouse (19) of special pipe (18), the inside rotation of liquid storehouse (19) is connected with runner (20), the top swing joint of runner (20) has silicon storehouse (21), the inside swing joint of silicon storehouse (21) has spin (22), the outside of spin (22) is equipped with shower nozzle (23).
2. A silicon epitaxial growth diffusion assistance apparatus for a semiconductor separator according to claim 1, characterized in that: the number of the fixed plates (3) is four, and the four fixed plates (3) are uniformly distributed on the outer side of the substrate (2).
3. A silicon epitaxial growth diffusion assistance apparatus for a semiconductor separator according to claim 1, characterized in that: the number of the fixing plates (3) is the same as that of the guide pipes (5), and the fixing plates (3) are movably connected with the ring pipe (6) through the guide pipes (5).
4. A silicon epitaxial growth diffusion assistance apparatus for a semiconductor separator according to claim 1, characterized in that: the number of the ion bins (8) is three, and the three ion bins (8) are uniformly distributed in the harmonic ring (7).
5. A silicon epitaxial growth diffusion assistance apparatus for a semiconductor separator according to claim 1, characterized in that: the number of the stirring plates (10) is three, and the three stirring plates (10) are uniformly distributed on the outer side of the rotating shaft (9).
6. A silicon epitaxial growth diffusion assistance apparatus for a semiconductor separator according to claim 1, characterized in that: the left and right sides of hydrogen fan (16) all are equipped with support column (14), and hydrogen fan (16) evenly distributed is in the outside of mediation ring (7).
7. A silicon epitaxial growth diffusion assistance apparatus for a semiconductor separator according to claim 1, characterized in that: silicon tetrachloride is arranged in the silicon bin (21), and the number of the rolling balls (22) is twice that of the silicon bin (21).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011449293.3A CN112626615A (en) | 2020-12-09 | 2020-12-09 | Silicon epitaxial growth diffusion auxiliary equipment for semiconductor discrete device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011449293.3A CN112626615A (en) | 2020-12-09 | 2020-12-09 | Silicon epitaxial growth diffusion auxiliary equipment for semiconductor discrete device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112626615A true CN112626615A (en) | 2021-04-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011449293.3A Withdrawn CN112626615A (en) | 2020-12-09 | 2020-12-09 | Silicon epitaxial growth diffusion auxiliary equipment for semiconductor discrete device |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1185293B (en) * | 1960-06-13 | 1965-01-14 | Siemens Ag | Method for manufacturing a semiconductor device |
| AT243317B (en) * | 1960-11-29 | 1965-11-10 | Siemens Ag | Process for the production of elongated monocrystalline semiconductor bodies |
| CN101333678A (en) * | 2007-06-25 | 2008-12-31 | 北京有色金属研究总院 | Control pipeline for distributing and evaluating supply system of trichlorosilane or silicon tetrachloride |
| CN106082237A (en) * | 2016-08-19 | 2016-11-09 | 太仓市金锚化工有限公司 | A kind of hydrogenation of silicon tetrachloride reactor |
-
2020
- 2020-12-09 CN CN202011449293.3A patent/CN112626615A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1185293B (en) * | 1960-06-13 | 1965-01-14 | Siemens Ag | Method for manufacturing a semiconductor device |
| AT243317B (en) * | 1960-11-29 | 1965-11-10 | Siemens Ag | Process for the production of elongated monocrystalline semiconductor bodies |
| CN101333678A (en) * | 2007-06-25 | 2008-12-31 | 北京有色金属研究总院 | Control pipeline for distributing and evaluating supply system of trichlorosilane or silicon tetrachloride |
| CN106082237A (en) * | 2016-08-19 | 2016-11-09 | 太仓市金锚化工有限公司 | A kind of hydrogenation of silicon tetrachloride reactor |
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Application publication date: 20210409 |