CH397875A - Process for manufacturing a single crystal semiconductor body, apparatus for carrying out said process and product resulting from said process - Google Patents

Process for manufacturing a single crystal semiconductor body, apparatus for carrying out said process and product resulting from said process

Info

Publication number
CH397875A
CH397875A CH1389561A CH1389561A CH397875A CH 397875 A CH397875 A CH 397875A CH 1389561 A CH1389561 A CH 1389561A CH 1389561 A CH1389561 A CH 1389561A CH 397875 A CH397875 A CH 397875A
Authority
CH
Switzerland
Prior art keywords
carrying
manufacturing
single crystal
semiconductor body
crystal semiconductor
Prior art date
Application number
CH1389561A
Other languages
French (fr)
Inventor
Christopher Schaarschmi Edward
Original Assignee
Merck & Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck & Co Inc filed Critical Merck & Co Inc
Publication of CH397875A publication Critical patent/CH397875A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02381Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/02433Crystal orientation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/0257Doping during depositing
    • H01L21/02573Conductivity type
    • H01L21/02576N-type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
CH1389561A 1960-11-29 1961-11-29 Process for manufacturing a single crystal semiconductor body, apparatus for carrying out said process and product resulting from said process CH397875A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7234460A 1960-11-29 1960-11-29

Publications (1)

Publication Number Publication Date
CH397875A true CH397875A (en) 1965-08-31

Family

ID=22106995

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1389561A CH397875A (en) 1960-11-29 1961-11-29 Process for manufacturing a single crystal semiconductor body, apparatus for carrying out said process and product resulting from said process

Country Status (7)

Country Link
AT (1) AT243317B (en)
BE (1) BE610469A (en)
CH (1) CH397875A (en)
DE (1) DE1419716B2 (en)
ES (1) ES272455A1 (en)
GB (1) GB990119A (en)
SE (1) SE305201B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7772097B2 (en) 2007-11-05 2010-08-10 Asm America, Inc. Methods of selectively depositing silicon-containing films
CN112626615A (en) * 2020-12-09 2021-04-09 黄梦蕾 Silicon epitaxial growth diffusion auxiliary equipment for semiconductor discrete device

Also Published As

Publication number Publication date
ES272455A1 (en) 1962-03-01
DE1419716A1 (en) 1968-10-10
AT243317B (en) 1965-11-10
DE1419716B2 (en) 1971-12-16
GB990119A (en) 1965-04-28
SE305201B (en) 1968-10-21
BE610469A (en) 1962-05-17

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