JPS56137617A - Semiconductor crystal substrate - Google Patents

Semiconductor crystal substrate

Info

Publication number
JPS56137617A
JPS56137617A JP4175580A JP4175580A JPS56137617A JP S56137617 A JPS56137617 A JP S56137617A JP 4175580 A JP4175580 A JP 4175580A JP 4175580 A JP4175580 A JP 4175580A JP S56137617 A JPS56137617 A JP S56137617A
Authority
JP
Japan
Prior art keywords
silicon
film
layer
single crystal
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4175580A
Other languages
Japanese (ja)
Inventor
Toshiki Inooku
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP4175580A priority Critical patent/JPS56137617A/en
Publication of JPS56137617A publication Critical patent/JPS56137617A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

PURPOSE:To make it easy to separate an element by forming a silicon film on a single crystal silicon through the inter-mediary of a silicon C layer. CONSTITUTION:A silicon C intermediate layer is adhered to a silicon single crystal as a ground substrate. In addition, a silicon film is built up and impurities of a prearranged pattern are added into the said film, thus forming an integrated circuit. Next, if the unnecessary silicon part is removed way down to the silicon C layer, interelement separation is carried out easily. Silicon C is extremely stable chemically and physically, and as such has a significant etching selection ratio with almost all etching solutions. For this reason, the film can be removed through dissolution with extreme ease.
JP4175580A 1980-03-28 1980-03-28 Semiconductor crystal substrate Pending JPS56137617A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4175580A JPS56137617A (en) 1980-03-28 1980-03-28 Semiconductor crystal substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4175580A JPS56137617A (en) 1980-03-28 1980-03-28 Semiconductor crystal substrate

Publications (1)

Publication Number Publication Date
JPS56137617A true JPS56137617A (en) 1981-10-27

Family

ID=12617227

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4175580A Pending JPS56137617A (en) 1980-03-28 1980-03-28 Semiconductor crystal substrate

Country Status (1)

Country Link
JP (1) JPS56137617A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136305A (en) * 1983-12-26 1985-07-19 Hitachi Ltd Semiconductor substrate
US4983538A (en) * 1987-11-20 1991-01-08 Fujitsu Limited Method for fabricating a silicon carbide substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136305A (en) * 1983-12-26 1985-07-19 Hitachi Ltd Semiconductor substrate
US4983538A (en) * 1987-11-20 1991-01-08 Fujitsu Limited Method for fabricating a silicon carbide substrate

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